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APT45GP120J 1200V POWER MOS 7 IGBT G The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. (R) E C E SO ISOTOP (R) 2 T- 27 "UL Recognized" * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff MAXIMUM RATINGS Symbol VCES VGE VGEM IC1 IC2 ICM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient * 50 kHz operation @ 800V, 16A * 20 kHz operation @ 800V, 30A * RBSOA rated G C E All Ratings: TC = 25C unless otherwise specified. APT45GP120J UNIT 1200 20 30 75 34 170 170A @ 960V 329 -55 to 150 300 Watts C Amps Volts Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current 1 @ TC = 25C Reverse Bias Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT 1200 3 4.5 3.3 3.0 500 2 6 3.9 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) 2 ICES I GES A nA 6-2003 050-7430 Rev C Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) 2500 100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc RBSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT45GP120J Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V I C = 45A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 960V Inductive Switching (25C) VCC = 600V VGE = 15V I C = 45A 4 5 MIN TYP MAX UNIT 3935 300 55 7.5 185 25 80 170 18 29 102 38 900 1869 904 18 29 151 79 900 3078 2254 MIN TYP MAX UNIT C/W gm ns ns A nC V pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Safe Operating Area td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RJC RJC WT Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 44 55 6 R G = 5 TJ = +25C J Inductive Switching (125C) VCC = 600V VGE = 15V I C = 45A R G = 5 TJ = +125C Turn-on Switching Energy (Diode) Turn-off Switching Energy 66 J THERMAL AND MECHANICAL CHARACTERISTICS Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight .38 N/A 29.2 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7430 Rev C 6-2003 TYPICAL PERFORMANCE CURVES 90 80 IC, COLLECTOR CURRENT (A) VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 90 80 IC, COLLECTOR CURRENT (A) APT45GP120J VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE 70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(VGE = 15V) 160 140 TC=25C TC=125C 70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (VGE = 10V) 16 TC=125C TC=25C VGE, GATE-TO-EMITTER VOLTAGE (V) 250s PULSE TEST <0.5 % DUTY CYCLE 14 12 10 8 6 4 2 0 IC = 45A TJ = 25C IC, COLLECTOR CURRENT (A) VCE=240V VCE=600V 120 100 80 60 40 20 0 0 1 2 3 45 67 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics IC = 90A TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE TJ = -55C TJ = 25C TJ = 125C VCE=960V 0 20 40 60 80 100 120 140 160 180 200 GATE CHARGE (nC) FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 5 5 4.5 4 3.5 3 2.5 2.0 1.5 1.0 0.05 0 0 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 4 IC = 45A 3 IC = 22.5A 2 IC = 90A IC = 45A IC = 22.5A 1 0 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2 1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 -50 6 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 120 IC, DC COLLECTOR CURRENT(A) BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) 100 80 60 20 0 -50 Rev C 050-7430 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature -25 6-2003 40 TYPICAL PERFORMANCE CURVES 35 30 25 20 15 10 5 0 0 10 20 30 40 50 60 70 80 90 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 80 70 60 tr, RISE TIME (ns) TJ = 25 or 125C,VGE = 10V APT45GP120J 180 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 160 140 120 100 80 60 40 20 0 VGE =10V,TJ=125C VGE =15V,TJ=125C VGE= 10V VGE= 15V VGE =15V,TJ=25C VGE =10V,TJ=25C VCE = 600V TJ = 25C or 125C RG = 5 L = 100 H VCE = 600V RG = 5 L = 100 H 0 10 20 30 40 50 60 70 80 90 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 100 90 80 tf, FALL TIME (ns) TJ = 125C, VGE = 10V or 15V 70 60 50 40 30 20 TJ = 25C, VGE = 10V or 15V RG =5, L = 100H, VCE = 600V 50 40 30 20 10 RG =5, L = 100H, VCE = 600V 0 10 20 30 40 50 60 70 80 90 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current TJ = 25 or 125C,VGE = 15V 10 0 10 20 30 40 50 60 70 80 90 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 6000 VCE = 600V L = 100 H RG = 5 8000 EON2, TURN ON ENERGY LOSS (J) 7000 6000 5000 4000 3000 2000 1000 TJ =125C, VGE=15V EOFF, TURN OFF ENERGY LOSS (J) VCE = 600V L = 100 H RG = 5 5000 TJ =125C,VGE=10V TJ = 125C, VGE = 10V or 15V 4000 3000 2000 TJ = 25C, VGE=15V 1000 0 TJ = 25C, VGE = 10V or 15V 0 10 20 30 40 50 60 70 80 90 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 12000 SWITCHING ENERGY LOSSES (J) VCE = 600V VGE = +15V TJ = 125C TJ = 25C, VGE=10V 0 20 30 40 50 60 70 80 90 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 8000 SWITCHING ENERGY LOSSES (J) VCE = 600V VGE = +15V RG = 5 Eon2 90A 10000 8000 7000 6000 5000 4000 Eon2 90A Eoff 90A 6000 Eon2 45A 4000 Eoff 45A 2000 0 Eon2 22.5A Eoff 22.5A 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 Eoff 90A 3000 2000 1000 Eoff 22.5A 0 0 Eon2 45A Eoff 45A Eon2 22.5A Rev C 6-2003 050-7430 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES 10,000 5,000 IC, COLLECTOR CURRENT (A) 180 Cies 160 140 120 100 180 160 140 120 APT45GP120J C, CAPACITANCE ( F) P 1,000 500 Coes 100 50 Cres 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 10 0 0 0 100 200 300 400 500 600 700 800 900 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area 0.40 , THERMAL IMPEDANCE (C/W) 0.35 0.30 0.25 0.9 0.7 0.5 0.20 0.15 0.10 0.1 0.05 0 0.05 10-5 10-4 SINGLE PULSE 0.3 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC Z JC 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 90 RC MODEL 10 Junction temp. ( "C) FMAX, OPERATING FREQUENCY (kHz) 0.0339 0.000443F Power (Watts) 10 0.0806 0.0269F 0.265 Case temperature 0.608F TJ = 125C TC = 75C D = 50 % VCE = 800V RG = 5 FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL 20 30 40 50 60 70 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 1 10 Fmax = min(f max1 , f max 2 ) f max1 = f max 2 = Pdiss = 0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off TJ - TC R JC 050-7430 Rev C 6-2003 APT45GP120J APT30DF120 10% Gate Voltage T J = 125 C Collector Voltage V CC IC V CE tr td(on) 90% A D.U.T. 10% Collector Current 5% 5% Switching Energy Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions 90% VTEST Gate Voltage t d(off) 90% tf Collector Voltage T J = 125 C *DRIVER SAME TYPE AS D.U.T. A V CE IC 100uH V CLAMP B 0 Switching Energy 10% Collector Current A DRIVER* D.U.T. Figure 23, Turn-off Switching Waveforms and Definitions Figure 24, EON1 Test Circuit SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 1.95 (.077) 2.14 (.084) 6-2003 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Emitter Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. Rev C * Emitter Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 Gate 050-7430 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. 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