 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PROCESS Switching Diode CPD41 Central TM High Current Switching Diode Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 20 x 20 MILS 8.0 MILS 6.5 x 6.5 MILS Al - 30,000A Au - 12,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 29,250 PRINCIPAL DEVICE TYPES 1N3600 1N4150 CMPD4150 BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) Central 1000 TM PROCESS CPD41 Semiconductor Corp. Typical Electrical Characteristics Forward Voltage 100 Leakage Current IF, Forward Current (mA) IR, Reverse Current (A) 100 TA = 125C 10 TA = 125C 10 TA = -40C 1 TA = 75C 1 TA = 25C 0.1 TA = 25C 0.1 0 0.2 0.4 0.6 0.8 1 1.2 0.01 0 10 20 30 40 50 VF, Forward Voltage (V) VR, Reverse Voltage (V) Capacitance 0.96 0.94 Forward Dynamic Impedance ZD, Dynamic Impedance (ohms) 100 0.98 C, Capacitance (pF) 0.92 0.9 0.88 0.86 0.84 0.82 0.8 0.1 1 10 100 TA = 25C 10 1 TA = 25C 0.1 1 10 100 1000 VR, Reverse Voltage (V) IF, Forward Current (mA) 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) |
Price & Availability of CPD41
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |