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| FDFMC2P120 July 2005 FDFMC2P120 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode General Description FDFMC2P120 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance. Applications * Buck Boost Features * -2 A, -20 V RDS(ON) = 125 m @ VGS = -4.5 V RDS(ON) = 200 m @ VGS = -2.5 V * Low Profile - 0.8mm maximum - in the new package MicroFET 3x3 mm PIN 1 2 3 TO BOTTOM NC 1 2 6 5 A A S 6 TOP 5 4 S3 4G BOTTOM MLP 3x3 Absolute Maximum Ratings Symbol VDSS VGSS ID VRRM IO PD TJ, TSTG TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current Power Dissipation (Steady State) (Note 1a) Ratings -20 12 -3.5 -10 20 2 2.4 1.2 -55 to +150 Units V V A V A W C (Note a) (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 60 145 C/W Package Marking and Ordering Information Device Marking 2P120 Device FDFMC2P120 Reel Size 7'' Tape width 12mm Quantity 3000 units (c)2005 Fairchild Semiconductor Corporation FDFMC2P120 Rev.E (W) FDFMC2P120 Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, (Note 2) Test Conditions VGS = 0 V, ID = -250 A Min -20 Typ Max Units V Off Characteristics ID = -250 A, Referenced to 25C VDS = -16 V, VGS = 12 V, VGS = 0 V VDS = 0 V -0.6 -1.0 3 101 145 136 -10 6 -11 -1 100 -1.5 mV/C A nA V mV/C m On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance ID = -250 A VDS = VG, ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -2 A VGS = -2.5 V, ID = -2 A VGS = -4.5 V, ID = -2A,TJ=125C VGS = -2.5 V, VDS = -5 V VDS = -5 V, ID = -3.5 A 125 200 180 ID(on) gFS Ciss Coss Crss RG A S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = -10 V, f = 1.0 MHz V GS = 0 V, V GS = 0 V, 280 65 35 7 pF pF pF f = 1.0 MHz Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 8 12 11 3.2 16 22 20 6.4 4 ns ns ns ns nC nC nC VDS = -10 V, VGS = -4.5 V ID = -3.5 A, 3 0.7 1 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -2 A Voltage IF = -3.5 A, Diode Reverse Recovery Time Diode Reverse Recovery Charge dIF/dt = 100 A/s (Note 2) -0.9 13 3 -2 -1.2 A V nS nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC are guaranteed by design while RJA is determined by the user's board design. (a). RJA = 60C/W when mounted on a 1in2 pad of 2 oz copper (b). RJA = 145C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDFMC2P120 Rev.E (W) FDFMC2P12 Electrical Characteristics Symbol VR IR VF TA = 25C unless otherwise noted Parameter Reverse Voltage Reverse Leakage Forward Voltage Test Conditions IR = 1mA VR = 5V IF = 1A Min 20 Typ Max Units V A mA V Schottky Diode Characteristic TJ = 25 C o TJ = 100 C o TJ = 25 C o 0.32 100 10 0.39 FDFMC2P120 Rev.E (W) FDFMC2P120 Typical Characteristics 10 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.5V -3.0V 2.4 2.2 2 VGS = -2.5V 1.8 1.6 -3.0V 1.4 1.2 1 0.8 -3.5V -4.0V -4.5V -ID, DRAIN CURRENT (A) 8 6 -2.5V 4 -2.0V 2 0 0 1 2 3 4 5 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 2 4 6 8 10 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.44 RDS(ON), ON-RESISTANCE (OHM) ID = -1.8A 0.4 0.36 0.32 0.28 0.24 0.2 0.16 0.12 0.08 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) TA = 25oC TA = 125oC 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -3.5A VGS = -4.5V 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 8 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V TA = -55oC -ID, DRAIN CURRENT (A) 6 25oC VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125oC 25oC -55oC 125oC 4 2 0 0.5 1 1.5 2 2.5 3 3.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDFMC2P120 Rev.E (W) FDFMC2P120 Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) 500 ID = -3.5A VDS = -5V -10V f = 1MHz VGS = 0 V 4 400 CAPACITANCE (pF) -15V Ciss 3 300 2 200 Coss 1 100 Crss 0 0 1 2 Qg, GATE CHARGE (nC) 3 4 0 0 4 8 12 16 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. IR, REVERSE LEAKAGE CURRENT (A) 10 IF, FORWARD LEAKAGE CURRENT (A) Figure 8. Capacitance Characteristics. 0.1 TJ = 125oC 0.01 TJ = 125oC 1 TJ = 25oC 0.1 0.001 TJ = 100oC 0.0001 TJ = 25oC 0.01 0.00001 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, FORWARD VOLTAGE (V) 0.000001 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 9. Schottky Diode Forward Voltage. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 10. Schottky Diode Reverse Current . 1 D = 0.5 RJA(t) = r(t) * RJA RJA =145 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDFMC2P120 Rev.E (W) FDFMC2P120 NOTES : A. CONFORMS TO JEDEC REGISTRATION M0-229, VARIATION WEEA, DATE 11/2001. B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M 1994 FDFMC2P120 Rev.E (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 |
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