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InGaAs-APD/Preamp Receiver
FEATURES
* Small Form Factor Package(GW): 9 pins coplanar * Integrated Design Optimizes Performance at Bit Rates up to 12.5Gb/s * High Sensitivity: -27dBm (typ.) * Electrical Differential Output * Wide Bandwidth: 10.5GHz (typ.) * Operates in both C and L wavelength bands
FRM5N141GW
APPLICATIONS
This APD with HBT preamplifier is intended to function as an optical receiver at 1,310nm or 1,530-1,610nm in SONET, SDH, DWDM or other optical fiber systems operating up to 12.5Gb/s. The typical transimpedance (Zt) value of 1,300 optimizes the total bandwidth for 10Gb/s application. The detector preamplifier is DC coupled and has an electrical differential output.
DESCRIPTION
The FRM5N141GW incorporates a high bandwidth InGaAs APD photo diode, a GaAs HBT IC amplifier in a hermetically sealed Small Form Factor package (SFF). The APD is processed with modern MOVPE techniques resulting in a reliable performance over a wide range of operating conditions. The lens coupling system and the single mode fiber are assembled using Nd YAG welding.
ABSOLUTE MAXIMUM RATINGS (Tc=25C)
Parameter Storage Temperature Operating Temperature Supply Voltage PIN Reverse Voltage PIN Reverse Current Symbol Tstg Top Vss VR IR(peak) Ratings -40 to +85 -5 to +75 -6 to 0 0 to VB(Note) 3 Unit C C V V mA
Note: Since VB may vary from device-to-device, VB data is attached to each device for reference.
Edition 1.3 January 2003
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FRM5N141GW
OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25C, =1,550nm, Vss=-5.2V, unless otherwise specified)
Parameter APD Responsivity APD Breakdown Voltage Temperature Coefficient of VB AC Transimpedance Output Common Voltage Maximum Output Voltage Swing Bandwidth Lower Cut-off Frequency Peaking Symbol R13 R15 R16 VB Zt Vout Vclip Test Conditions = 1,310nm, M=1 = 1,550nm, M=1 = 1,610nm, M=1 ID = 10A Note (1) f = 750MHz, Single-end Saturated Output Voltage -3dB from 750MHz, Pin=-20dBm M=9 M=3
InGaAs-APD/Preamp Receiver
Min. 0.75 0.75 20.0 0.03 900 400 8.5 8.5 -7 27 27 -5.46 9.5 3800
Limits Typ. 0.85 0.90 0.80 25.0 0.05 1300 -400 600 10.5 10.5 40 0.5 15 30 12 10 -27.0 -26.0 -25.0 -26.0 -5 -4.5 -4.0 110 -5.20 10.0 3900
Max. 30.0 0.07 800 -
Unit A/W V V/C mV mV
BW fcl dpk
GHz 100 1.5 40 psp-p 60 -25.0 -24.0 130 -4.94 10.5 4000 dB mA V k K dBm dB kHz dB
-3dB from 750MHz, Pin=-20dBm 130MHz to BW, Pin=-20dBm,M=9 1GHz to 6GHz, Pin=-20dBm, M=9
Group Delay Deviation
GD 1GHz to 8GHz, Pin=-20dBm, M=9
Output Return Loss
S22
130MHz to 6GHz 130MHz to 8GHz 10Gb/s, NRZ, PRBS=231-1, B.E.R.=10-12, VR=Optimum 25C, Rext=13dB 25C, Rext=10dB 25C, Rext=8.2dB 70C, Rext=13dB
Minimum Sensitivity
Pr
dBm
Maximum Overload
Po
Optical Return Loss Power Supply Current Power Supply Voltage Thermistor Resistance Thermistor B Constant
ORL Iss Vss Rth B
10Gb/s, NRZ, Rext=13dB PRBS=231-1, Rext=10dB B.E.R.=10-12, Rext=8.2dB M=3 = 1,550nm = 1,310nm -
Note 1: =VB/dTc Note: All the parameters are measured with 50, DC-coupled and 0V output offset.
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InGaAs-APD/Preamp Receiver
Notes
FRM5N141GW
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FRM5N141GW
"GW" PACKAGE
InGaAs-APD/Preamp Receiver
UNIT: mm
Lead Detail (x10)
8 - P0.8=6.4 2 - 0.2 7 - 0.4
4.0
2 - R1.1 O4.1 O0.9 0.6
(1.0)
Bending Radius 0.3 0.35 0.25
1 17.0 13.0 9.0
9 5.5 6.7 0.4 PIN # Symbol 1400 MIN. 5.0
1 2 3 4 5 6 7 8 9 VPD VPreamp GND OUT GND OUT GND OFFSET Rth
2.0
0.1
Function
PD BIAS (+) Preamp BIAS CASE GROUND OUTPUT (-) CASE GROUND OUTPUT (+) CASE GROUND DC OFFSET CONTROL THERMISTOR
2.6
28.0 MAX.
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111
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CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888
* Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582
Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others.
(c) 2002 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0302M200
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