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S amHop Microelectronics C orp.
S T U/D2240NL
Nov 22,2004
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
40V
F E AT UR E S
( m W ) Max
ID
10A
R DS (ON)
S uper high dense cell design for low R DS (ON).
35@ V G S = 10V 60@ V G S = 4.5V
R ugged and reliable. TO-252 and TO-251 P ackage.
D
D G S
G D
S
G
S TU S E R IE S TO-252AA(D-P AK)
S TD S E R IE S TO-251(l-P AK)
S
AB S OL UTE MAXIMUM R ATINGS
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed
b a
(TA=25 C unles s otherwis e noted)
S ymbol VDS VGS Limit 40 20 10 8.3 40 15 50 35 -55 to 175 W C Unit V V A A A A
25 C 70 C
ID IDM IS PD TJ, TS TG
Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W
S T U/D2240NL
N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
Parameter
5
S ymbol
BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg
c
Condition
VGS = 0V, ID = 250uA VDS = 32V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 10A VGS =4.5V, ID= 8A VDS = 5V, VGS = 10V VDS = 10V, ID =10A
Min Typ C Max Unit
40 1 V uA 100 nA 1.0 1.8 25 45 20 12 840 85 70 2.5 15.2 4.8 18.6 12.1 18.7 8.9 3.9 3.1 18 5.6 22 14 22 10 4.6 3.6 950 98 82 3.0 35 60 V
m ohm m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance
A S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =25V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ VDD = 20V ID = 1 A VGS = 4.5V R GE N = 3.3 ohm VDS =20V, ID =10A,VGS =10V VDS =20V, ID =10A,VGS =4.5V Gate-S ource Charge Gate-Drain Charge Qgs Qgd VDS =20V, ID = 10A VGS =10V
2
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge
tD(ON) tr tD(OFF) tf Qg
ns ns ns ns nC nC nC nC
S T U/D2240NL
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
VSD
Condition
VGS = 0V, Is = 15A
Min Typ Max Unit
1 1.3 V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a
Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing.
20 V G S =5V 16 15 20 -55 C
ID, Drain C urrent(A)
V G S =10,9,8,7,6V
12
V G S =4V
ID, Drain C urrent (A)
10
T j=125 C 25 C
8 4 0 V G S =3V
5
0
0 0.5 1 1.5 2 2.5 3
0
0.8
1.6
2.4
3.2
4.0
4.8
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
1800 1.6
F igure 2. Trans fer C haracteris tics
R DS (ON), On-R es is tance Normalized
1500
1.4 1.2 1.0 0.8 0.6 0.4 -55
V G S =10V ID=10A
C , C apacitance (pF )
1200 900 600 300 C os s 0 C rs s 0 5 10 15 20 25 30 C is s
-25
0
25
50
75
100 125
T j( C )
V DS , Drain-to S ource Voltage (V )
T j, J unction T emperature ( C )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with Drain C urrent and Temperature
3
S T U/D2240NL
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
18 V DS =10V
F igure 6. B reakdown V oltage V ariation with T emperature
20.0
gFS , T rans conductance (S )
Is , S ource-drain current (A)
15 12 9 6 3 0 0 5 10 15 20
10.0
1.0 0.4 0.6 0.8 1.0 1.2 1.4
IDS , Drain-S ource C urrent (A)
V S D, B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation with Drain C urrent
10
ID, Drain C urrent (A)
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
60
V G S , G ate to S ource V oltage (V )
8 6 4 2 0 0
VDS =20V ID=10A
10
R DS (
ON)
L imit
10m
s
10
1s
0m
s
11
DC
0.1 0.03
VGS =10V S ingle P ulse T A=25 C 0.1 1 10 50 60
3
6
9
12
15
18
21 24
Qg, T otal G ate C harge (nC )
V DS , Drain-S ource V oltage (V )
F igure 9. G ate C harge 4
F igure 10. Maximum S afe O perating Area
S T U/D2240NL
V DD ton V IN D VG S R GE N G
90%
toff tr
90%
RL V OUT
td(on) V OUT
td(off)
90% 10%
tf
10%
INVE R TE D
6
S
V IN
50% 10%
50%
P ULS E WIDTH
F igure 11. S witching T es t C ircuit
F igure 12. S witching Waveforms
10
Normalized Transient
Thermal Resistance
1
0.5 0.2 0.1 P DM t1
on
0.1
0.05 0.02 0.01 1. 2. 3. 4.
t2
Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.01 0.00001
R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2
100
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
5
S T U/D2240NL
6
S T U/D2240NL
5 95 7 84 9 6.00
35 05 85 0.94 4 3 0
9 7 30 3 9 36
3 41 3 3 5 1
4
L2
2.29 9.70 1.425 0.650 0.600
BSC 1 1.625 0.850 REF.
0.090 82 56 6 0.024
BSC 398 0.064 33 REF.
7
S T U/D2240NL
TO-251 Tube
TO251 Tube/TO-252 Tape and Reel Data
" A"
TO-252 Carrier Tape
UNIT:P PACKAGE TO-252 (16 P) A0 6.80 O0.1 B0 10.3 O0.1 K0 2.50 O0.1 D0 r2 D1
r1.5 + 0.1 -0
E 16.0 0.3O
E1 1.75 0.1O
E2 7.5 O0.15
P0 8.0 O0.1
P1 4.0 O0.1
P2 2.0 O0.15
T 0.3 O0.05
TO-252 Reel
S
UNIT:P TAPE SIZE 16 P REEL SIZE r 330 M r330 O 0.5 N r97 O 1.0 W
17.0 + 1.5 -0
T 2.2
H
r13.0 + 0.5 - 0.2
K 10.6
S 2.0 O0.5
G
R
V
8

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