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Bulletin I2115
16TTS.. SERIES
PHASE CONTROL SCR VT
Description/Features
The 16TTS.. new series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines.
<1.4V @ 10A = 200A
ITSM
VR/ VD = 1200V
Output Current in Typical Applications Applications
Capacitive input filter TA = 55C,TJ = 125C, common heatsink of 1C/W
Single-phase Bridge
13.5
Three-phase Bridge Units
17 A
Major Ratings and Characteristics Characteristics
IT(AV) Sinusoidal waveform IRMS VRRM/ VDRM ITSM VT dv/dt di/dt TJ @ 10 A, TJ = 25C 16 800 and 1200 200 1.4 500 150 - 40 to 125 A V A V V/s A/s C Also available in SMD-220 package (series 16TTS..S)
16TTS..S
10
Units
A
TO-220AC
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16TTS.. Series
Voltage Ratings
VRRM, maximum Part Number peak reverse voltage V
800 1200
VDRM , maximum peak direct voltage V
800 1200
IRRM/IDRM 125C mA
5
16TTS08 16TTS12
Absolute Maximum Ratings
Parameters
IT(AV) Max. Average On-state Current IRMS Max. RMS On-state Current ITSM I2t Max. Peak One Cycle Non-Repetitive Surge Current Max. I2t for fusing
16TTS..
10 16 170 200 144 200
Units
A
Conditions
50% duty cycle @ TC = 98 C, sinusoidal wave form
10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied A2s 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied A 2s V m V mA T J = 25 C TJ = 125 C mA mA V/s A/s VR = rated VRRM/ VDRM t = 0.1 to 10ms, no voltage reapplied @ 10A, TJ = 25C T J = 125C
I2t V TM rt
Max. I2t for fusing Max. On-state Voltage Drop On-state slope resistance
2000 1.4 24.0 1.1 0.5 5.0 100 200 500 150
VT(TO) Threshold Voltage IRM/IDM Max.Reverse and Direct Leakage Current IH IL Max. Holding Current Max. Latching Current
Anode Supply = 6V, Resistive load, Initial IT=1A Anode Supply = 6V, Resistive load
dv/dt Max. rate of rise of off-state Voltage di/dt Max. rate of rise of turned-on Current
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16TTS.. Series
Triggering
Parameters
PGM Max. peak Gate Power PG(AV) Max. average Gate Power + IGM Max. paek positive Gate Current - VGM Max. paek negative Gate Voltage IGT Max. required DC Gate Current to trigger
16TTS..
8.0 2.0 1.5 10 90 60 35
Units
W
Conditions
A V mA Anode supply = 6V, resistive load, TJ = - 65C Anode supply = 6V, resistive load, T J = 25C Anode supply = 6V, resistive load, TJ = 125C V Anode supply = 6V, resistive load, TJ = - 65C Anode supply = 6V, resistive load, T J = 25C Anode supply = 6V, resistive load, TJ = 125C T J = 125C, VDRM = rated value mA T J = 125C, VDRM = rated value
VGT
Max. required DC Gate Voltage to trigger
3.0 2.0 1.0
VGD IGD
Max. DC Gate Voltage not to trigger Max. DC Gate Current not to trigger
0.2 2.0
Switching
Parameters
tgt t rr tq
Typical turn-on time Typical reverse recovery time Typical turn-off time
16TTS..
0.9 4 110
Units
s TJ = 25C TJ = 125C
Conditions
Thermal-Mechanical Specifications
Parameters
TJ T stg Max. Junction Temperature Range Max. Storage Temperature Range
16TTS..
- 40 to 125 - 40 to 125 1.3 62 0.5 2 (0.07) Min. Max. 6 (5) 12 (10)
Units
C
Conditions
RthJC Max. Thermal Resistance Junction to Case RthJA Max. Thermal Resistance Junction to Ambient RthCS Typ. Thermal Resistance Case to Ambient wt T Approximate Weight Mounting Torque
C/W
DC operation
Mounting surface, smooth and greased g (oz.) Kg-cm (Ibf-in)
Case Style
TO-220AC
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16TTS.. Series
Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) 125 120 115
C on d uction An g le
16TTS.. Series R t h J C (DC) = 1.3 K/W
125 120 115 110 105 100 95 90 30
16TTS.. Series R thJC (DC) = 1.3 K/W
110 105 100 95 90 30 60 90 120 180 0 2 4 6 8 10 12
Conduction Period
60 90 120 180 12 DC 14 16
0
2
4
6
8
10
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Maximum Average On- state Power Loss (W) 20 Maximum Average On-state Power Loss (W) 25
Fig. 2 - Current Rating Characteristics
15
180 120 90 60 30 RMS Limit
Conduction Angle
20
15
DC 180 120 90 60 30
10
10 RMS Limit
Conduction Period
5
16TTS.. T = 125C
J
5
16TTS.. T J = 125C 0 2 4 6 8 10 12 14 16 18
0
0
2
4
6
8
10
12
0
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
At Any Rated Load Condition And With Rated V Applied Following Surge.
RRM
Fig. 4 - On-state Power Loss Characteristics
Peak Half Sine Wave Forward Current (A) 220 200 180 160 140 120 100 80 16TTS.. Series 0.1 1 10
Maximum Non Repetitive Surge Current Versus Pulse Train Duration.
180
160
Initial T = 125C J @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Initial T = 125C J No Voltage Reapplied Rated V Reapplied
RRM
140
120
100
16TTS..Series
80
1
10
100
60 0.01
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Maximum Non-Repetitive Surge Current
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16TTS.. Series
1000 Instantaneous On-state Current (A)
100
10 T = 25C T = 125C
J J
16TTS.. Series 1 0 1 2 3 4 5
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
100 Instantaneous Gate Voltage (V)
Rectangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5 s, tp >= 6 s b)Recommended load line for <= 30% rated di/dt: 10 V, 65 ohms tr = 1 s, tp >= 6 s
(1) PGM = 40 , tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms
(a)
10
(b)
T J = -10 C T J = 25 C
T J = 1 25 C
1 VGD IGD 0.1 0.001 0.01
(4)
(3)
(2)
(1)
16TTS.. 0.1 1
Frequency Limited by PG(AV) 10 10 0
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
Tran sient Thermal Impedance Z thJC (K/W) 10 D D D D D = 0.50 = 0.33 = 0.25 = 0.17 = 0.08 Steady State Value (DC Operation)
1
0.1
Single Pulse 16TTS.. Series
0.0 1 0.0001
0.001
0.0 1 Square Wave Pulse Duration (s)
0.1
1
Fig. 9 - Thermal Impedance ZthJC Characteristics
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16TTS.. Series
Outline Table
10.54 (0.41)
2
1.32 (0.05) 3.78 (0.15) DIA. 3.54 (0.14) 6.48 (0.25) 6.23 (0.24) 1.22 (0.05)
MAX.
15.24 (0.60) 14.84 (0.58) 123
2.92 (0.11) 2.54 (0.10) TERM 2
2
14.09 (0.55) 13.47 (0.53)
3.96 (0.16) 3.55 (0.14) 2.04 (0.080) MAX. 0.10 (0.004)
1.40 (0.05) 1.15 (0.04) 0.94 (0.04) 0.69 (0.03)
2.89 (0.11) 2.84 (0.10)
123 4.57 (0.18) 4.32 (0.17)
0.61 (0.02) MAX.
Dimensions in millimeters (and inches)
5.08 (0.20) REF.
Ordering Information Table
Device Code
16
1
T
2
T
3
S
4
12
5
2 (A)
1 2 3 4 5
-
Current Rating, RMS value Circuit Configuration T = Single Thyristor Package T = TO-220AC Type of Silicon S = Converter Grade Voltage code: Code x 100 = VRRM 08 = 800V 12 = 1200V
1 (K) (G) 3
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