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| SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 SEPTEMBER 95 PARTMARKING DETAILS 7 BSS79B - CE BSS79C - CF BSS79B BSS79C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM PTOT tj:tstg VALUE 75 40 6 800 330 -55 to +150 UNIT V V V mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER SYMBOL V(BR)CBO V(BR)CEO MIN. 75 40 6 10 10 10 0.3 1.0 40 100 250 8 10 10 225 60 120 300 Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Base Cut-Off Current Emitter Base Cut-Off Current Collector-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Collector-Base Capacitance Delay Time MAX. UNIT V V V A CONDITIONS. IC=10A IC=10mA IE=10A VCB=60V VCB=60V, Tamb=150oC VBE=3.0V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, VCE=10V IC= 150mA, VCE=10V Emitter-Base Breakdown Voltage V(BR)EBO ICBO IEBO VCE(sat) hFE fT Cobo td tr ts tf nA nA V V BSS79B BSS79C MHz pF ns ns ns ns VCE=20V, IC=20mA f=100MHz VCB=10V, f=1MHz VCC=30V, IC=150mA IB1=IB2=15mA VCC=30V, IC=150mA IB1=IB2=15mA Rise Time Storage Time Fall Time PAGE NUMBER |
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