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| PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE122 PACKAGE DIMENSIONS 0.175 (4.44) 0.087 (2.22) O 0.065 (1.65) 0.050 (1.27) 0.200 (5.08) O 0.095 (2.41) 0.500 (12.70) MIN EMITTER COLLECTOR 0.020 (0.51) SQ. (2X) SCHEMATIC Collector 0.100 (2.54) 0.030 (0.76) 0.100 (2.54) NOM NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. Emitter DESCRIPTION The QSE122 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package. FEATURES * * * * * * * NPN silicon phototransistor Package type: Sidelooker Medium wide reception angle, 50 Package material and color: black epoxy Matched emitter: QEE113 Daylight filter High sensitivity (c) 2002 Fairchild Semiconductor Corporation Page 1 of 4 5/1/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE122 ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Unit C C C C V V mW Soldering Temperature (Flow)(2,3) Collector Emitter Voltage Emitter Collector Voltage Power Dissipation(1) NOTES: 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing. 5. = 880 nm (AlGaAs). ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25C unless otherwise specified) Parameter Peak Sensitivity Reception Angle Collector Emitter Dark Current Collector-Emitter Breakdown Emitter-Collector Breakdown On-State Collector QSE122 Current(5) VCE = 10 V, Ee = 0 IC = 1 mA IE = 100 A Ee = 0.5 mW/cm2, VCE = 5 V Ee = 0.5 mW/cm2, IC = 0.1 mA IC = 1mA, VCC = 5V, RL = 100 Test Conditions Symbol PS ICEO BVCEO BVECO IC(ON) VCE(SAT) tr tf Min -- -- -- 30 5 3.0 -- -- -- Typ 880 25 -- -- -- -- -- 8 8 Max -- -- 100 -- -- 12.0 0.4 -- -- Units nM Deg. nA V V mA V s s Saturation Voltage(5) Rise Time Fall Time (c) 2002 Fairchild Semiconductor Corporation Page 2 of 4 5/1/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE122 Figure 1. Light Current vs. Radiant Intensity 102 VCE = 5V GaAs Light Source Figure 2. Angular Response Curve 110 120 130 100 90 80 70 60 50 40 30 20 10 0 1.0 IC(ON) - Light Current (mA) 10 1 140 150 100 160 170 180 1.0 10-1 0.1 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1 Ee - Radiant Intensity (mW/cm 2) Figure 3. Dark Current vs. Collector - Emitter Voltage 101 102 Figure 4. Light Current vs. Collector - Emitter Voltage IL - Normalized Light Current ICEO - Dark Current (nA) 100 101 Ie=1mW/cm2 10-1 100 Ie=0.5mW/cm2 Ie=0.2mW/cm2 Ie=0.1mW/cm2 10-2 10-1 Normalized to: VCE=5V Ie=0.5mW/cm2 TA=25C 1 10 10-3 0 5 10 15 20 25 30 10-2 0.1 VCE - Collector-Emitter Voltage (V) VCE - Collector-Emitter Voltage (V) Figure 5. Dark Current vs. Ambient Temperature 104 ICEO - Normalized Dark Current 10 3 Normalized to: VCE = 25V TA = 25C VCE = 25V 102 VCE = 10V 101 100 10-1 10-2 25 50 75 100 TA - Ambient Temperature (C) (c) 2002 Fairchild Semiconductor Corporation Page 3 of 4 5/1/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE122 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. (c) 2002 Fairchild Semiconductor Corporation Page 4 of 4 5/1/02 |
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