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| Power Transistors 2SD1268 Silicon NPN epitaxial planar type For power switching Complementary to 2SB943 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 Unit: mm 4.20.2 s Features q q q q Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 130 80 7 6 3 30 2 150 -55 to +150 Unit V V V A A W C C 7.50.2 16.70.3 3.10.1 4.0 1.40.1 1.30.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 14.00.5 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 0.5A IC = 2A, IB = 0.1A IC = 2A, IB = 0.1A VCE = 10V, IC = 0.5A, f = 10MHz IC = 0.5A, IB1 = 50mA, IB2 = -50mA, VCC = 50V 30 0.5 2.5 0.15 80 45 60 260 0.5 1.5 V V MHz s s s min typ max 10 50 Unit A A V Rank classification R 60 to 120 Q 90 to 180 P 130 to 260 Rank hFE2 Note: Ordering can be made by the common rank (PQ rank hFE = 90 to 260) in the rank classification. 1 Power Transistors PC -- Ta 50 5 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C IB=100mA 2SD1268 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=20 30 10 3 1 0.3 -25C 0.1 0.03 0.01 0.01 0.03 TC=100C 25C VCE(sat) -- IC Collector power dissipation PC (W) Collector current IC (A) 40 4 50mA 3 30mA 25mA 2 20mA 10mA 1 5mA 2mA 1mA 0 2 4 6 8 10 12 30 (1) 20 10 (2) (3) (4) 0 0 20 40 60 80 100 120 140 160 0 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 10000 IC/IB=20 hFE -- IC 10000 VCE=2V 3000 1000 300 100 30 10 3 1 0.01 0.03 fT -- IC VCE=10V f=10MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 25C TC=-25C 100C 1000 300 100 30 10 3 1 0.01 0.03 TC=100C 25C -25C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 30 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 100 IE=0 f=1MHz TC=25C 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=-IB2) VCC=50V TC=25C Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25C Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 0.1 Switching time ton,tstg,tf (s) Collector current IC (A) 10 3 1 0.3 0.1 0.03 0.01 10 I CP 3 1 0.3 0.1 0.03 0.01 IC 10ms 1ms DC t=0.5ms tstg ton tf 0.3 1 3 10 30 100 0 0.4 0.8 1.2 1.6 2.0 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 |
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