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| Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1892 Unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 4.20.2 q q q q 14.00.5 Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < 2.5V Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings -120 -100 -5 -8 -5 45 2 150 -55 to +150 Unit V V V A A W C C 16.70.3 7.50.2 s Features Solder Dip 4.0 1.30.2 0.5 +0.2 -0.1 0.80.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.540.25 5.080.5 1 2 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) 3 Internal Connection C B E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = -120V, IE = 0 VCE = -100V, IB = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VCE = -5V, IC = -1A VCE = -5V, IC = -4A IC = -4A, IB = -4mA IC = -4A, IB = -4mA VCE = -10V, IC = - 0.5A, f = 1MHz IC = -4A, IB1 = -4mA, IB2 = 4mA, VCC = -50V 20 1.0 0.8 1.0 -100 2000 5000 30000 -2.5 -3.0 V V MHz s s s min typ max -100 -100 -100 Unit A A A V FE2 Rank classification Q P 5000 to 15000 8000 to 30000 Rank hFE2 1 Power Transistors PC -- Ta 60 -6 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (1) (4) Without heat sink (PC=2W) TC=25C -5 2SB1252 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -100 VCE(sat) -- IC IC/IB=1000 Collector power dissipation PC (W) 50 -30 Collector current IC (A) IB=- 0.5mA -4 - 0.4mA - 0.3mA 40 -10 30 -3 -3 TC=100C -1 25C -25C 20 (2) (3) 0 0 20 40 60 80 100 120 140 160 (4) -2 - 0.2mA 10 -1 - 0.1mA - 0.3 0 0 -2 -4 -6 -8 -10 -12 - 0.1 - 0.1 - 0.3 -1 -3 -10 -30 -100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC -100 hFE -- IC 100000 VCE=5V 1000 25C Cob -- VCB Collector output capacitance Cob (pF) IE=0 f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 Forward current transfer ratio hFE 30000 -30 TC=100C 300 10000 -25C -10 100 3000 1000 300 100 30 10 - 0.01 - 0.03 - 0.1 - 0.3 -3 TC=-25C -1 100C 25C 30 10 - 0.3 3 - 0.1 - 0.1 - 0.3 -1 -3 -10 -30 -100 -1 -3 -10 1 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) ton, tstg, tf -- IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (-IB1=IB2) VCC=-50V TC=25C ton tf 1 0.3 0.1 0.03 0.01 0 -2 -4 -6 -8 tstg Area of safe operation (ASO) -100 -30 Non repetitive pulse TC=25C ICP t=1ms -3 -1 IC 10ms DC Switching time ton,tstg,tf (s) 10 3 Collector current IC (A) -10 - 0.3 - 0.1 - 0.03 - 0.01 -1 -3 -10 -30 -100 -300 -1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 2SB1252 Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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