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Datasheet File OCR Text: |
Darlington 2SD2081 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=-0.5A VCB=10V, f=1MHz 2SD2081 10max 10max 120min 2000min 1.5max 2.0max 60typ 95typ V V MHz pF 13.0min Equivalent circuit B C (2k) (200) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1259) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2081 120 120 6 10(Pulse15) 1 30(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Driver for Solenoid, Motor and General Purpose (Ta=25C) Unit External Dimensions FM20(TO220F) 4.00.2 10.10.2 4.20.2 2.8 c0.5 A V 16.90.3 8.40.2 mA 1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2 2.54 3.9 BCE 0.2 0.80.2 a b o3.30.2 Weight : Approx 2.0g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at)( V ) 15 50 VCE( sat ) - IB Characteristics (Typical) 3 I C - VBE Temperature Characteristics (Typical) 10 (V C E= 4V) 1 A 0m m 5mA A 3mA 8 2 Collector Current I C (A) Collector Current I C( A) 10 2m A 6 1mA mp) p) ase Tem 25C (C 2 IB=0.5mA 0 0 1 2 3 4 5 6 0 0.2 0.5 1 5 10 50 100 200 0 0 1 -30C (C 125C 1A (Cas 5 0. 7m A 1 5A ase Tem e Te 4 p) IC=10A 2 3 Collector-Emitter Voltage V C E( V) Base Current I B( mA) Base-Emittor Voltage V B E( V) h FE - IC Characteristics (Typical) (VCE=4V) 20000 10000 DC Cur rent Gain h F E 5000 hFE - IC Temperature Characteristics (Typical) (VCE=4V) 20000 10000 DC Cur rent Gain h F E 5000 j - a( C/W) j-a - t Characteristics 5 Typ 12 1000 500 5C 25 C 0C 1000 500 Transient Thermal Resistance 1 -3 0.5 100 50 30 0.03 100 50 30 0.03 0.1 0.5 1 5 10 0.1 0.5 1 5 10 0.2 1 10 Time t(ms) 100 1000 Collector Current I C( A) Collector Current I C( A) fT - IE Characteristics (Typical) (VCE=12V) 120 30 Safe Operating Area (Single Pulse) 30 10 m P c - T a Derating Typ 100 Cut- off Fr equ ency f T( MH Z) Collector Curre nt I C( A) 10 5 1m s s Maximu m Power Dissipa tion P C( W) W ith 80 DC 20 In fin ite he 60 at 1 0.5 Without Heatsink Natural Cooling 0.1 si nk 40 10 20 Without Heatsink 2 5 10 50 100 200 0 0 -0.05 -0.1 -0.5 -1 -5 -10 0.05 3 0 25 50 75 100 125 150 Emitter Current I E( A) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 144 |
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