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| Transistor 2SD2258 (Tentative) Silicon NPN epitaxial planer type 6.90.1 0.15 Unit: mm 1.05 2.50.1 0.05 (1.45) 0.8 0.5 4.50.1 0.45-0.05 2.50.1 For low-frequency output amplification 0.7 4.0 q q q Darlington connection. High foward current transfer ratio hFE. Allowing supply with the radial taping. 0.45-0.05 +0.1 +0.1 2.50.5 1 2 2.50.5 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25C) Ratings 60 50 5 1.5 1 1 150 -55 ~ +150 1cm2 Unit V V V A A W C C 0.45+0.1 - 0.05 1.20.1 0.65 max. Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package (HW type) Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board Internal Connection C B s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency *1h FE (Ta=25C) Symbol ICBO IEBO VCBO VCEO VEBO hFE *1 200 E Conditions VCB = 45V, IE = 0 VEB = 4V, IC = 0 IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCE = 10V, IC = 1A IC = 1A, IB = 1mA*2 IC = 1A, IB = 1mA*2 VCB = 10V, IE = -50mA, f = 200MHz min typ max 0.1 0.1 60 50 5 4000 40000 1.8 2.2 150 *2 14.50.5 s Features 0.65 max. 1.0 1.0 0.2 Unit A A V V V VCE(sat) VBE(sat) fT V V MHz Rank classification Q R S 4000 ~ 10000 8000 ~ 20000 16000 ~ 40000 Pulse measurement Rank hFE 1 Transistor PC -- Ta Collector to emitter saturation voltage VCE(sat) (V) 1.2 2SD2258 VCE(sat) -- IC 10 IC/IB=1000 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) 10 IC/IB=1000 Collector power dissipation PC (W) 1.0 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 3 25C 1 Ta=-25C 100C 0.3 3 Ta=-25C 1 25C 0.8 100C 0.6 0.3 0.4 0.1 0.1 0.2 0.03 0.03 0 0 40 80 120 160 200 0.01 0.01 0.03 0.1 0.3 1 3 0.01 0.01 0.03 0.1 0.3 1 3 Ambient temperature Ta (C) Collector current IC (A) Collector current IC (A) hFE -- IC 24 105 Cob -- VCB Collector output capacitance Cob (pF) VCE=10V IE=0 f=1MHz Ta=25C Forward current transfer ratio hFE 20 TC=100C 104 25C 16 -25C 12 103 8 4 102 0.01 0 0.03 0.1 0.3 1 3 1 3 10 30 100 Collector current IC (A) Collector to base voltage VCB (V) 2 |
Price & Availability of 2SD2258
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