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DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2499, 2SK2499-Z
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2499 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
3.0 0.3
PACKAGE DIMENSIONS (in millimeters)
10.6 MAX. 3.6 0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 4.8 MAX. 1.3 0.2
FEATURES
* Low On-Resistance
RDS(on)1 = 9 m (VGS = 10 V, ID = 25 A) RDS(on)2 = 14 m (VGS = 4 V, ID = 25 A)
4 123
* Low Ciss Ciss = 3 400 pF TYP. * High Avalanche Capability. * Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 C) Total Power Dissipation (TA = 25 C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW 10 s, Duty Cycle 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 60 20 50 200 75 1.5 150 50 250 V V A A W W
6.0 MAX.
1.3 0.2 0.75 0.1 2.54
0.5 0.2 2.8 0.2
2.54
1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB
MP-25 (TO-220)
(10.0) 4 1.0 0.5 8.5 0.2 1.5 MAX. 4.8 MAX. 1.3 0.2
C A mJ
-55 to +150 C
1.4 0.2
1.0 0.3 (2.54) (2.54) 123 1.1 0.4 3.0 0.5
R) ) .5 R (0 0.8 (
0.5 0.2
** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0
MP-25Z (SURFACE MOUNT TYPE)
Drain
2.8 0.2
1. 2. 3. 4.
Gate Drain Source Fin (Drain)
Body Diode Gate Gate Protection Diode Source
Document No. D10045EJ1V0DS00 (1st edition) Date Published May 1995 P Printed in Japan
(c)
1995
2SK2499, 2SK2499-Z
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Drain to Source On-State Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 3 400 1 600 770 55 360 480 360 152 11 60 0.92 105 265 1.0 20 MIN. TYP. 7.3 11 1.5 58 10 10 MAX. 9.0 14 2.0 UNIT m m V S TEST CONDITIONS VGS = 10 V, ID = 25 A VGS = 4 V, ID = 25 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 25 A VDS = 60 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 25 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 50 A VDD = 48 V VGS = 10 V IF = 50 A, VGS = 0 IF = 50 A, VGS = 0 di/dt = 100 A/s
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
Test Circuit 1 Avalanche Capability
D.U.T. RG = 25 PG VGS = 20 0 V 50
Test Circuit 2 Switching Time
D.U.T.
L VDD PG. RG RG = 10
RL
VGS
Wave Form
VGS
0 10 % VGS (on) 90 %
VDD
ID
90 % 90 % ID
BVDSS IAS ID VDD VDS
VGS 0 t t = 1 s Duty Cycle 1 %
ID
Wave Form
0
10 % td (on) ton tr td (off) toff
10 % tf
Starting Tch
Test Circuit 3 Gate Charge
D.U.T. IG = 2 mA PG. 50
RL VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2499, 2SK2499-Z
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 140 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 120 100 80 60 40 20 0 20 40 60 80 100 120 140 160 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
0
20
40
60
80
100 120 140 160
TC - Case Temperature - C
TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed
=1
FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse) ID - Drain Current - A
d ite V) Lim 10 n) = oS S( RD t VG (a
PW
200
0
100
10
ID - Drain Current - A
s
VGS = 20 V 160 VGS = 10 V 120 VGS = 4V 80 40
0
1
Po
s
m s
ID(DC)
10
w er Di ss
DC
m
s
10
ipa
tio
n
1 0.1
TC = 25 C Single Pulse 1
Lim
ite
d
10
100
0
1
2
3
4
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed
ID - Drain Current - A
100
10 Ta=-25 C 25 C 125 C 1
VDS=10V
0
2
4
6
8
VGS- Gate to Source Voltage - V
3
2SK2499, 2SK2499-Z
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W Rth(ch-a) = 83.3 C/W 100
10
1 Rth(ch-c) = 1.67 C/W 0.1
0.01 Single Pulse 0.001 10 100 1m 10 m 100 m 1 10 100 1 000
PW - Pulse Width - s RDS(on) - Drain to Source On-State Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 1000 VDS=10V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed
100
20
10
10
ID=25A
1 1
10
100
1000
0
10
20
30
ID- Drain Current - A RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cutoff Voltage - V
30
Pulsed
2.0
VDS = 10 V ID = 1 mA
20
1.5
VGS=4V 10 VGS=10V 0 10 100 ID - Drain Current - A 1000
1.0
0.5
0 -50
0
50
100
150
Tch - Channel Temperature - C
4
2SK2499, 2SK2499-Z
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ISD - Diode Forward Current - A 20 100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
15
VGS=4V
10 4V 1 VGS = 0
10 VGS=10V 5 ID = 25A - 50 0 50 100 150
0.1 0 0.5 1.0 1.5
0
Tch - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS 1 000 td(on), tr, td(off), tf - Switching Time - ns td(off)
100 000 Ciss, Coss, Crss - Capacitance - pF
VGS = 0 f = 1 MHz
tf 100 tr td(on)
10 000 Ciss
1 000
Crss
Coss
10
100 0.1
1
10
100
1.0 0.1
VDD =30V VGS =10V RG =10 1.0 10 100 ID - Drain Current - A
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 trr - Reverse Recovery time - ns di/dt =100A/s VGS = 0
VDS - Drain to Source Voltage - V
60 VDS 40 VGS
12 10 8 6
100
10
20
4 2
1.0 0.1
1.0
10
100
0
50
100
150
0 200
ID - Drain Current - A
Qg - Gate Charge - nC
5
VGS - Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 80 VDD=48V ID = 50A 14
2SK2499, 2SK2499-Z
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 IAS - Single Avalanche Current - A
EAS
SINGLE AVALANCHE ENERGY DERATING FACTOR 160 Energy Derating Factor - %
IAS = 50 A 10
140 120 100 80 60 40 20
=2
50
VDD = 30 V RG = 25 VGS = 20 V 0 IAS < 50 A =
mJ
1.0 VDD = 30 V VGS = 20 V 0 0.1 RG = 25 10 100
1m
10 m
0 25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
2SK2499, 2SK2499-Z
REFERENCE
Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
7
2SK2499, 2SK2499-Z
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11
8

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