|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
UNISONIC TECHNOLOGIES CO., LTD 3N60 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 TO-220 Power MOSFET FEATURES * RDS(ON) = 3.6 @VGS = 10 V * Ultra low gate charge ( typical 10 nC ) * Low reverse transfer capacitance ( CRSS = typical 5.5 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness *Pb-free plating product number: 3N60L SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Order Number Normal Lead Free Plating 3N60-x-TA3-T 3N60L-x-TA3-T Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube 3N60L-x-TA3-T (1)Packing Type (2)Package Type (3)Drain-Source Voltage (4)Lead Plating (1) T: Tube (2) TA3: TO-220 (3) A: 600V, B: 650V (4) L: Lead Free Plating Blank: Pb/Sn , www.unisonic.com.tw Copyright (c) 2007 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-110,A 3N60 ABSOLUTE MAXIMUM RATINGS (TC = 25 , unless otherwise specified) PARAMETER SYMBOL 3N60-A 3N60-B Power MOSFET RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS 30 V Avalanche Current - (Note 1) IAR 3.0 A TC = 25C 3.0 A Continuous Drain Current ID TC = 100C 1.9 A Pulsed Drain Current, TP Limited by TJMAX - (Note 1) IDM 12 A Avalanche Energy, Single Pulsed (Note 2) EAS 200 mJ Avalanche Energy, Repetitive, Limited by TJMAX EAR 7.5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation PD 75 W Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction-to-Case Junction-to-Ambient SYMBOL JC JA TYP MAX 1.67 62.5 UNIT C/W C/W ELECTRICAL CHARACTERISTICS (TC =25 , unless otherwise specified) PARAMETER Off Characteristics Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse 3N60-A 3N60-B SYMBOL BVDSS IDSS IGSS BVDSS/ VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QDD TEST CONDITIONS VGS = 0 V, ID = 250 A VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V TJ ID = 250 A, Referenced to 25C VDS = VGS, ID = 250 A VGS = 10 V, ID = 1.5A 2.0 2.8 350 50 5.5 10 30 20 30 10 2.7 4.9 0.6 4.0 3.6 450 65 7.5 30 70 50 70 13 MIN TYP MAX UNIT 600 650 10 100 100 -100 V V A A nA nA V/ V pF pF pF ns ns ns ns nC nC nC Breakdown Voltage Temperature Coefficient On Characteristics Gate Threshold Voltage Drain-Source On-State Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 25 V, VGS = 0 V, f = 1MHz VDD = 300V, ID = 3.0 A, RG = 25 (Note 4, 5) VDS= 480V,ID= 3.0A, VGS= 10 V (Note 4, 5) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-110,A 3N60 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS Source- Drain Diode Ratings and Characteristics Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 3.0 A Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 3.0 A, dIF/dt = 100 A/s (Note 4) Reverse Recovery Charge QRR Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 40mH, IAS = 3.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 3.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature Power MOSFET MIN TYP MAX UNIT 1.4 3.0 12 210 1.2 V A A ns C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-110,A 3N60 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V I FM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv /dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-110,A 3N60 TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDD Power MOSFET VDS VGS RG VDS 90% 10V Pulse Width 1 s Duty Factor 0.1% D.U.T. VGS 10% t D(ON ) tR tD (OFF) tF Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms 50k 12V 0.2 F 0.3 F Same Type as D.U.T. 10V VDS QGS QG QGD VGS DUT 3mA VGS Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS RD VDD D.U.T. 10V tp IAS tp Time Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-110,A 3N60 TYPICAL CHARACTERISTICS Breakdown Voltage Variation vs . Junction Temperature Power MOSFET On-Resistance Variation vs. Junction Temperature Drain-Source Breakdown Voltage, BVDSS (Normalized) Drain-Source On-Resistance, RDS(ON) (Normalized) 1.2 1.1 1.0 0.9 0.8 -100 Note: 1. VGS =0V 2. I D=250A -50 0 50 100 150 200 Junction Temperature, T J ( ) Maximum Safe Operating Area Operation in This Area is Limited by R DS(on ) 3.0 2.5 2.0 1.5 1.0 0.5 Note: 1. VGS=10V 2. ID=4A 0.0 -100 -50 0 50 100 150 200 Junction Temperature TJ ( ) , Maximum Drain Current vs. Case Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0 25 150 50 75 100 125 Case Temperature, TC ( ) Transfer Characteristics 10 Drain Current, ID (A) 10 100s 1ms 10ms 1 DC Notes: 1 . T J=25 2 . T J=150 3 . Single Pulse 0.1 1 10 100 1000 Drain-Source Voltage, VDS (V) On-State Characteristics 10 Drain Current, ID (A) V GS 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V Bottorm :5.5V Top : Drain Current, I D (A) Drain Current, I D (A) 1 150 1 25 55 Notes: 1. VDS=50V 2. 250s Pulse Test 0.1 Notes: 1. 250s Pulse Test 2. TC=25 0.1 2 0.1 1 10 Drain-to-Source Voltage, VDS (V) 4 6 8 10 Gate-Source Voltage, VGS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-110,A 3N60 TYPICAL CHARACTERISTICS(Cont.) On-Resistance Variation vs . Drain Current and Gate Voltage Drain-Source On-Resistance, RDS(ON) () Reverse Drain Current, I DR (A) 6 5 4 3 2 1 0 Note: TJ =25 Power MOSFET On State Current vs. Allowable Case Temperature 10 VGS=20V VGS =10V 150 1 25 0 2 4 6 8 10 12 Drain Current, ID (A) Capacitance Characteristics (Non-Repetitive) 600 500 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-Drain Voltage VSD (V) , Gate Charge Characteristics Notes: 1. VGS=0V 2. 250s Test Gate-Source Voltage, VGS (V) CISS =CGS +CGD (CDS=shorted ) COSS =CDS+CGD CRSS=CGD 12 10 8 6 4 2 0 VDS=300V VDS=480V VDS=120V Capacitance (pF) 400 300 200 100 0 0.1 C ISS C OSS Notes: 1. VGS =0V 2. f = 1MHz CRSS Note: ID=3.0A 0 2 4 6 8 10 Total Gate Charge, QG (nC) 1 10 Drain-SourceVoltage VDS (V) , Transient Thermal Response Curve Thermal Response, JC (t) 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse Notes : 1. JC (t) = 1.18 /W Max. 2. Duty Factor , D=t 1/t2 3.TJM-TC=PDM x JC (t) 0.01 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration t 1 (sec) , UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-110,A 3N60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-110,A |
Price & Availability of 3N60L-B-TA3-T |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |