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| VRRM IF(AV)M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V m V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-02 Oct. 06 * Patented free-floating silicon technology * Low on-state and switching losses * Optimized for use as freewheeling diode in highvoltage GTO converters * Industry standard housing * Cosmic radiation withstand rating Blocking Maximum rated values 1) Parameter Repetitive peak reverse voltage Permanent DC voltage for 100 FIT failure rate Characteristic values Symbol Conditions VRRM VDC-link f = 50 Hz, tp = 10ms, Tvj = 125C Ambient cosmic radiation at sea level in open air. (100% Duty) min typ Value 6000 3800 Unit V V Parameter Repetitive peak reverse current Symbol Conditions IRRM VR = VRRM, Tvj = 125C max 50 Unit mA Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions Fm a a Device unclamped Device clamped min 36 typ 40 max 44 50 200 Unit kN m/s m/s Unit kg mm mm mm 2 2 Parameter Weight Housing thickness Surface creepage distance Air strike distance Symbol Conditions m H DS Da min 26.2 30 20 typ max 0.83 26.6 Note 1 Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDF 10H6004 On-state Maximum rated values 1) Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions IF(AV)M IF(RMS) IFSM I2t IFSM I2t Symbol Conditions VF V(T0) rT IF = 2500 A, Tvj = 125C Tvj = 125C IF = 200...6000 A tp = 1 ms, Tvj = 125C, VR = 0 V tp = 10 ms, Tvj = 125C, VR = 0 V Half sine wave, TC = 85 C min typ max 1100 1700 18x10 3 Unit A A A A2s A A2s Unit V V m 1.62x10 44x10 6 3 968x10 min typ max 3 1.5 0.6 3 Parameter On-state voltage Threshold voltage Slope resistance Turn-on Characteristic values Parameter Peak forward recovery voltage Symbol Conditions VFRM dIF/dt = 500 A/s, Tvj = 125C min typ max 150 Unit V Turn-off Characteristic values Parameter Reverse recovery current Reverse recovery charge Turn-off energy Symbol Conditions IRM Qrr Err di/dt = 300 A/s, IFQ = 1000 A, Tj = 125C, VRM = 2900 V, CS = 3 F (GTO snubber circuit) min typ max 1000 6000 5 Unit A C J ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1109-02 Oct. 06 page 2 of 6 5SDF 10H6004 Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min -40 -40 min typ max 125 125 Unit C C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Fm = 36...44 kN Anode-side cooled Fm = 36...44 kN Cathode-side cooled Fm = 36...44 kN Double-side cooled Fm = 36...44 kN Single-side cooled Fm = 36...44 kN typ max 12 24 24 3 6 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: Zth(j-c) (t) = R th i (1 - e-t/ i ) i =1 i Rth i(K/kW) i(s) 1 7.440 0.4700 2 2.000 0.0910 3 1.840 0.0100 4 0.710 0.0047 Fig. 1 Transient thermal impedance junction-to-case n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1109-02 Oct. 06 page 3 of 6 5SDF 10H6004 Fig. 2 Max. on-state voltage characteristics Fig. 3 Surge on-state current vs. pulse length. Halfsine wave Fig. 4 Forward recovery vs. turn on di/dt (max. values) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1109-02 Oct. 06 page 4 of 6 5SDF 10H6004 VF(t), IF (t) dIF/dt VFR IF (t) IF (t) -dIF/dt QRR VF (t) tfr tfr (typ) 10 s IRM VR (t) VF (t) IR (t) t VRM Fig. 5 General current and voltage waveforms Li LCL RS DCL IF VLC CCL DUT LLoad Fig. 6 Test circuit. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1109-02 Oct. 06 page 5 of 6 5SDF 10H6004 Fig. 7 Outline drawing, all dimensions are in millimeters and represent nominal values unless stated otherwise Related documents: Doc. Nr 5SYA 2036 5SZK 9104 5SZK 9105 Titel Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please contact factory Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for current version of documents. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1109-02 Oct. 06 |
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