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| 6MBI75UA-120 IGBT Module U-Series Features * High speed switching * Voltage drive * Low inductance module structure 1200V / 75A 6 in one-package Applications * Uninterruptible power supply * Inverter for Motor drive * AC and DC Servo drive amplifier * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso Conditions Rating 1200 20 100 75 200 150 75 150 390 +150 -40 to +125 2500 3.5 Unit V V A Continuous Tc=25C Tc=80C 1ms Tc=25C Tc=80C Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 between thermistor and others *2 Screw Torque Mounting *3 1 device W C VAC N*m AC:1min. *1 : All terminals should be connected together when isolation test will be done. *2 : Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. *3 :Recommendable value : 2.5 to 3.5 N*m(M5) Electrical characteristics (at Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr R lead R Conditions VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=75mA Tj=25C VGE=15V, IC=75A Tj=125C Tj=25C Tj=125C VCE=10V, VGE=0V, f=1MHz VCC=600V IC=75A VGE=15V RG=9.1 VGE=0V IF=75A Tj=25C Tj=125C Tj=25C Tj=125C Characteristics Min. Typ. - - - - 4.5 6.5 - 2.05 - 2.30 - 1.75 - 2.00 - 8 - 0.25 - 0.12 - 0.03 - 0.36 - 0.07 - 2.10 - 2.30 - 1.80 - 2.00 - - - 4.1 - 5000 465 495 3305 3375 Unit Max. 1.0 200 8.5 2.40 - 2.10 - - 1.20 0.60 - 1.00 0.30 2.50 - 2.20 - 0.35 - - 520 3450 mA nA V V Inverter Input capacitance Turn-on time nF s Turn-off time Forward on voltage V B value B *4:Biggest internal terminal resistance among arm. Thermistor Reverse recovery time Lead resistance, terminal-chip*4 Resistance IF=75A T=25C T=100C T=25/50C s m Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*5 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. - - - - - 0.05 Unit Max. 0.32 0.73 - C/W C/W C/W *5 : This is the value which is defined mounting on the additional cooling fin with thermal compound 6MBI75UA-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip 200 200 IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C/ chip VGE=20V 150 Collector current : Ic [A] 15V 12V 150 Collector current : Ic [A] VGE=20V 15V 12V 100 100 10V 10V 50 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 50 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 200 10 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip Collector - Emitter voltage : VCE [ V ] 150 Collector current : Ic [A] T j=25C T j=125C 8 6 100 4 Ic=150A Ic=75A Ic= 37.5A 50 2 0 0 1 2 3 4 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1M Hz, Tj= 25C 100.0 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Dynamic Gate charge (typ.) Vcc=600V, Ic=75A, Tj= 25C Capacitance : Cies, Coes, Cres [ nF ] Cies 10.0 VGE Cres 1.0 Coes 0.1 0 10 20 30 0 0 100 200 VCE 300 400 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] 6MBI75UA-120 Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=9.1, Tj= 25C 1000 1000 toff Switching time : ton, tr, toff, tf [ nsec ] toff ton tr 100 tf Switching time : ton, tr, toff, tf [ nsec ] IGBT Module Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=9.1, Tj=125C tr ton 100 tf 10 0 50 100 150 200 Collector current : Ic [ A ] 10 0 50 100 150 200 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=75A, VGE=15V, Tj= 25C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 20 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=9.1 Switching time : ton, tr, toff, tf [ nsec ] Eoff(125C) 15 Eon(125C) 10 Eoff(25C) Eon(25C) 1000 toff ton 100 tr tf 5 Err(125C) Err(25C) 0 10 1 10 100 1000 0 50 100 150 200 Gate resistance : Rg [ ] Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=75A, VGE=15V, Tj= 125C 200 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon 20 Collector current : Ic [ A ] 150 Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 9.1 ,Tj <= 125C Eoff 10 100 50 Err 0 1 10 100 1000 0 0 400 800 1200 Gate resistance : Rg [ ] Collector - Emitter voltage : VCE [ V ] 6MBI75UA-120 Forward current vs. Forward on voltage (typ.) chip 125 T j=25C T j=125C 75 1000 IGBT Module Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=9.1 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 100 Forward current : IF [ A ] 100 50 trr (125C) Irr (125C) trr (25C) Irr (25C) 25 0 0 1 2 3 4 Forward on voltage : VF [ V ] 10 0 50 100 150 200 Forward current : IF [ A ] Transient thermal resistance (max.) 10.000 100 Temperature characteristic (typ.) Thermal resistanse : Rth(j-c) [ C/W ] Resistance : R [ k ] 1.000 FWD IGBT 10 0.100 1 0.010 0.001 0.001 0.010 0.100 1.000 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [C ] Pulse width : Pw [ sec ] 6MBI75UA-120 Outline Drawings, mm M636 IGBT Module ( ) shows reference dimension. Equivalent Circuit Schematic 25,26 15,16 17 18 1 2 U 23,24 3 4 27,28 5 6 V 21,22 7 8 9 10 W 19,20 11 12 13,14 |
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