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| 79LV2040 20 Megabit (512K x 40-Bit) Low Low Voltage EEPROM MCM Logic Diagram Memory FEATURES: * * * * 512k x 40-bit EEPROM MCM RAD-PAK(R) radiation-hardened against natural space radiation Total dose hardness: - >100 krad (Si) - Dependent upon orbit Excellent Single event effects - SELTH > 84 MeV/mg/cm2 - SEU > 37 MeV/mg/cm2 read mode - SEU = 11.4 MeV/mg/cm2 write mode High endurance - 10,000 cycles (Page Programming Mode) - 10 year data retention Page Write Mode: 128 Dword Page High Speed: - 200 and 250 ns maximum access times Automatic programming - 15 ms automatic Page/Dword write Low power dissipation - 100 mW/MHz active current - 1.5 mW standby current DESCRIPTION: Maxwell Technologies' 79LV2040 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies' patented radiation-hardened RAD-PAK(R) MCM packaging technology, the 79LV2040 is the first radiation-hardened 8 megabit MCM EEPROM for space application. The 79LV2040 uses twenty 1 Megabit high speed CMOS die to yield a 20 megabit product. The 79LV2040 is capable of in-system electrical byte and page programmability. It has a 128 x 40 page programming function to make the erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 79LV2040, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm. Maxwell Technologies' patented RAD-PAK(R) packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Maxwell Technologies self-defined Class K * * * * * * 09.07.05 Rev 1 All data sheets are subject to change without notice 1 (858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com (c)2005 Maxwell Technologies All rights reserved. 20 Megabit (512K x 40-Bit) EEPROM MCM 79LV2040 PINOUT DESCRIPTION 1, 11, 21, 30, 40, 50, 51, 61, 71, 80, 90, 100 2, 12, 22, 29, 39, 49, 52, 62, 72, 79, 89, 99 60 - 53, 41 - 48, 10 3, 91 - 98, 88 - 81 13, 14, 15, 16 23 - 28, 31, 32, 78 -73, 70 - 68 33 VSS - Ground VCC - Positive Supply D0 to D39 Data I/O CS0\ - CS3\ Chip Enable Memory A0 to A16 Address Inputs RES\ - Reset 34 - 38 WE\0 - WE\4 Write Enables 66 - 63 RBSY\0 - RBSY\3 Ready/Busy 67 OE\ - Output Enable 09.07.05 Rev 1 All data sheets are subject to change without notice 2 (c)2005 Maxwell Technologies All rights reserved 20 Megabit (512K x 40-Bit) EEPROM MCM 79LV2040 TABLE 1. 79LV2040 ABSOLUTE MAXIMUM RATINGS PARAMETER Supply Voltage Input Voltage Package Weight Operating Temperature Range Storage Temperature Range 1. VIN min = -3.0V for pulse width <50ns. SYMBOL VCC VIN RSP TOPR TSTG -55 -65 MIN -0.6 -0.51 35 125 150 TYP MAX 7.0 7.0 UNIT V V Grams C C TABLE 2. 79LV2040 RECOMMENDED DC OPERATING CONDITIONS Memory PARAMETER Supply Voltage Input Voltage RES_PIN Operating Temperature Range 1. VIL min = -1.0V for pulse width < 50 ns SYMBOL VCC VIL VIH VH TOPR MIN 3.0 -0.31 2.2 VCC-0.5 -55 MAX 3.6 0.8 VCC +0.3 VCC +1 125 UNIT V V V V C TABLE 3. 79LV2040 DELTA LIMITS1 PARAMETER ICC1A ICC1B ICC2A ILI - ADDR, CE, OE, WE VARIATION2 +/- 10 % +/- 10 % +/- 10 % +/- 10 % ILI - D0-D39 +/- 10 % 1. Parameters are measured and recorded per MIL-STD-883 for Class K devices 2. Specified value in Table 5 09.07.05 Rev 1 All data sheets are subject to change without notice 3 (c)2005 Maxwell Technologies All rights reserved 20 Megabit (512K x 40-Bit) EEPROM MCM TABLE 4. 79LV2040 CAPACITANCE (TA = 25 C, f = 1 MHz) PARAMETER Input Capacitance : VIN = 0V1 SYMBOL CIN OE CIN WE CIN CE0-30 CIN A0-A16 CIN RES Output Capacitance: VOUT = 0V1 COut RDY/BSY CO ut D0-D39 1. Guaranteed by design. -MIN 79LV2040 MAX 6 6 30 6 120 60 48 pF UNIT pF TABLE 5. 79LV2040 DC ELECTRICAL CHARACTERISTICS (VCC = 3.3V 10%, TA = -55 TO +125C) PARAMETER Input Leakage Current A0-A16,WE, OE Input Leakage Current CE Input Leakage Current D0-D39 Output Leakage Current Standby VCC Current Operating VCC Current1,2 TEST CONDITION VIN = VCC & 0V VIN = VCC & 0V VIN = VCC & 0V (VCC = 5.5V, VOUT = 5.5V/0.4V) CE = ADDR=WE=OE =VCC CE = VIH; ADDR=WE=OE =VCC OE = 0V ADDR=WE=VCC IOUT = 0mA, CE Duty = 100%, Cycle = 1 us at VCC = 5.5V OE =ADDR=WE=0V IOUT = 0mA, CE Duty = 100%, Cycle = 150 ns at VCC = 5.5V Input Voltage Data Lines: VCCMin, IOL= 2.1mA Data Lines: VCC Min, IOH = -400 A All Outputs: VCCMin , IOH = -100uA 1. For RES IIL=2000uA max. 2. Only one Chip EnableActive (Logic Low) 3. RBSY is an open drain output. Only VOL applies to this pin. Output Voltage3 ILI ILO ICC1A ICC1B ICC2A 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 --SYMBOL ILI SUBGROUPS 1, 2, 3 MIN -MAX 11 10 8 8 640 21 30 UNITS Memory A mA A A A mA mA ICC2D 1, 2, 3 75 mA VIL VIH VOL VOH VOH 1, 2, 3 2.2 1, 2, 3 -2.4 VCC - 0.3V 0.8 0.4 --- V V V V 09.07.05 Rev 1 All data sheets are subject to change without notice 4 (c)2005 Maxwell Technologies All rights reserved 20 Megabit (512K x 40-Bit) EEPROM MCM (VCC =3.3V 10%, TA = -55 TO +125C) PARAMETER Address Access Time CE = OE = VIL, WE = VIH -200 -250 Chip Enable Access Time OE = VIL, WE = VIH -200 -250 Output Enable Access TIme CE = VIL, WE = VIH -200 -250 Output Hold to Address Change CE = OE =VIL, WE = VIH -200 -250 Output Disable to High-Z 2 CE = VIL, WE = VIH -200 -250 CE = OE = VIL, WE = VIH -200 -250 RES to Output Delay CE = OE = VIL, WE = VIH3 -200 -250 SYMBOL tACC SUBGROUPS 9, 10, 11 --tCE 9, 10, 11 --tOE 9, 10, 11 0 0 tOH 9, 10, 11 0 0 9, 10, 11 tDF 0 0 tDFR 0 0 tRR 9, 10, 11 0 0 MIN 79LV2040 MAX 200 250 ns 200 250 ns 110 120 ns --ns UNIT ns TABLE 6. 79LV2040 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1 Memory 50 50 ns 300 350 ns 525 600 1. Test conditions: input pulse levels = 0.4V to 2.4V; input rise and fall times < 20 ns; output load = 1 TTL gate + 100 pF (including scope and jig); reference levels for measuring timing = 0.8 V/1.8 V. 2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven. 3. Guaranteed by design. TABLE 7. 79LV2040 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION (VCC = 3.3V 10%, TA = -55 TO +125C) PARAMETER Address Setup Time -150 -200 Chip Enable to Write Setup Time (WE controlled) -150 -200 SYMBOL tAS SUBGROUPS 9, 10, 11 0 0 tCS 9, 10, 11 0 0 ----ns MIN 1 MAX UNITS ns 09.07.05 Rev 1 All data sheets are subject to change without notice 5 (c)2005 Maxwell Technologies All rights reserved 20 Megabit (512K x 40-Bit) EEPROM MCM (VCC = 3.3V 10%, TA = -55 TO +125C) PARAMETER Write Pulse Width CE controlled -200 -250 WE controlled -200 -250 Address Hold Time -200 -250 Data Setup Time -200 -250 Data Hold Time -200 -250 Chip Enable Hold Time (WE controlled) -200 -250 Write Enable to Write Setup Time (CE controlled) -200 -250 Write Enable Hold Time (CE controlled) -200 -250 Output Enable to Write Setup Time -200 -250 Output Enable Hold Time -200 -250 Write Cycle Time 2 -200 -250 Data Latch Time -200 -250 Byte Load Window -200 -250 Byte Load Cycle -200 -250 SYMBOL tCW 200 250 tWP 200 250 tAH 9, 10, 11 125 125 tDS 9, 10, 11 100 150 tDH 9, 10, 11 10 10 tCH 9, 10, 11 0 0 tWS 9, 10, 11 0 0 tWH 9, 10, 11 0 0 tOES 9, 10, 11 0 0 tOEH 9, 10, 11 0 0 tWC 9, 10, 11 --tDL 9, 10, 11 700 750 tBL 9, 10, 11 100 100 tBLC 9, 10, 11 1 1 09.07.05 Rev 1 79LV2040 MIN 1 MAX UNITS ns --ns --ns --ns --ns --ns --ns --ns --ns --ns --ms 15 15 ns --s --s 30 30 TABLE 7. 79LV2040 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION SUBGROUPS 9, 10, 11 Memory All data sheets are subject to change without notice 6 (c)2005 Maxwell Technologies All rights reserved 20 Megabit (512K x 40-Bit) EEPROM MCM (VCC = 3.3V 10%, TA = -55 TO +125C) PARAMETER Time to Device Busy -200 -250 Write Start Time 3 -200 -250 RES to Write Setup Time4 -200 -250 VCC to RES Setup Time4 -200 -250 1. Use this device in a longer cycle than this value. SYMBOL tDB SUBGROUPS 9, 10, 11 100 120 tDW 9, 10, 11 150 250 tRP 9, 10, 11 100 100 tRES 9, 10, 11 1 1 MIN 1 79LV2040 MAX --ns --s --s --UNITS ns TABLE 7. 79LV2040 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION 2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the internal write operation within this value. 3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used. 4. Guaranteed by design. Memory TABLE 8. 79LV2040 MODE SELECTION 1 PARAMETER Read Standby Write Deselect Write Inhibit Data Polling CE 2 VIL VIH VIL VIL X X VIL OE VIL X VIH VIH X VIL VIL WE VIH X VIL VIH VIH X VIH X I/O DOUT High-Z DIN High-Z --Data Out3 High-Z RES VH X VH VH X X VH VL RDY/BUSY High-Z High-Z High-Z --> VOL High-Z --VOL High-Z Program Reset X X 1. Refer to the recommended DC operating conditions. 2. For CE0-3 only one CE can be used ("on") at a time. 3. Bits 7, 15, 23, 31 and 39 09.07.05 Rev 1 All data sheets are subject to change without notice 7 (c)2005 Maxwell Technologies All rights reserved 20 Megabit (512K x 40-Bit) EEPROM MCM FIGURE 1. READ TIMING WAVEFORM 79LV2040 Memory FIGURE 2. BYTE WRITE TIMING WAVEFORM (1) (WE CONTROLLED) 09.07.05 Rev 1 All data sheets are subject to change without notice 8 (c)2005 Maxwell Technologies All rights reserved 20 Megabit (512K x 40-Bit) EEPROM MCM 79LV2040 FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED) Memory FIGURE 4. PAGE WRITE TIMING WAVEFORM (1) (WE CONTROLLED) 1) A7-A16 are Page Addresses and must be the same within a Page Write Operation. 09.07.05 Rev 1 All data sheets are subject to change without notice 9 (c)2005 Maxwell Technologies All rights reserved 20 Megabit (512K x 40-Bit) EEPROM MCM 1 79LV2040 FIGURE 5. PAGE WRITE TIMING WAVEFORM (2) (CE CONTROLLED) Memory 1) A7-A16 are Page Addresses and must be the same within a Page Write Operation. FIGURE 6. DATA POLLING TIMING WAVEFORM I/O1 1) BITS 7, 15, 23, 31 AND 39 09.07.05 Rev 1 All data sheets are subject to change without notice 10 (c)2005 Maxwell Technologies All rights reserved 20 Megabit (512K x 40-Bit) EEPROM MCM 79LV2040 FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM (1) (IN PROTECTION MODE) FIGURE 8. SOFTWARE DATA PROTECTION WAVEFORM (2) (IN NON-PROTECTION MODE) Memory EEPROM APPLICATION NOTES This application note describes the programming procedures for the EEPROM modules and with details of various techniques to preserve data integrity. Automatic Page Write Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle. Loading the first byte of data, the data load window opens 30 s for the second byte. In the same manner each additional byte of data can be loaded within 30 s of the preceding falling edge of either WE or CE. When CE and WE are kept high for 100 s after data input, the EEPROM enters the write mode automatically and the data input is written into the EEPROM. WE, CE Pin Operation During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE. 09.07.05 Rev 1 All data sheets are subject to change without notice 11 (c)2005 Maxwell Technologies All rights reserved 20 Megabit (512K x 40-Bit) EEPROM MCM Data Polling 79LV2040 Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is performing a write operation. RDY/Busy Signal RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal goes low (VOL) after the first write signal. At the end of the write cycle, the RDY/Busy returns to a high state ( VOH). RES Signal When RES is LOW (VL), the EEPROM cannot be read or programmed. The EEPROM data must be protected by keeping RES low when VCC is power on and off. RES should be high (VH) during read and programming operations. Memory Data Protection To protect the data during operation and power on/off, the EEPROM has the internal functions described below. 1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation. During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. Be careful not to allow noise of a width more than 20ns on the control pins. 09.07.05 Rev 1 All data sheets are subject to change without notice 12 (c)2005 Maxwell Technologies All rights reserved 20 Megabit (512K x 40-Bit) EEPROM MCM 2. Data Protection at VCC on/off 79LV2040 When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during VCC on/off by using a CPU reset signal to RES pin. 3. RES Signal RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES become low, programming operation doesn't finish correctly in case that RES falls low during programming operation. RES should be kept high for 10 ms after the last data is input . Memory 15ms 4. Software Data Protection Enable The 79LV2040contains a software controlled write protection feature that allows the user to inhibit all write operations to the device. This is useful in protecting the device from unwanted write cycles due to uncontrollable circuit noise or inadvertent writes caused by minor bus contentions. Software data protection is enabled by writing the following data sequence to the EEPROM and allowing the write cycle period (tWC) of 15ms to elapse: . Software Data Protection Enable Sequence Address 5555 AAAA or 2AAA 5555 Data AA AA AA AA AA 55 55 55 55 55 A0 A0 A0 A0 A0 09.07.05 Rev 1 All data sheets are subject to change without notice 13 (c)2005 Maxwell Technologies All rights reserved 20 Megabit (512K x 40-Bit) EEPROM MCM 5. Writing to the Memory with Software Data Protection Enabled 79LV2040 To write to the device once Software protection is enabled, the enable sequence must precede the data to be written. This sequence allows the write to occur while at the same time keeping the software protection enabled Sequence for Writing Data with Software Protection Enabled. Address 5555 AAAA or 2AAA 5555 Write Address(s) Data AA AA AA AA AA 55 55 55 55 55 A0 A0 A0 A0 A0 Normal Data Input Memory 6. Disabling Software Protection Software data protection mode can be disabled by inputting the following 6 bytes sequence. Once the software protection sequence has been written, no data can be written to the memory until the write cycle (TWC) has elapsed. Software Protection Disable Sequence Address 5555 AAAA or 2AAA 5555 5555 AAAA or 2AAA 5555 Data AA AA AA AA AA 55 55 55 55 55 80 80 80 80 80 AA AA AA AA AA 55 55 55 55 55 20 20 20 20 20 Devices are shipped in the "unprotected" state, meaning that the contents of the memory can be changed as required by the user. After the software data protection is enabled, the device enters the Protect Mode where no further write commands have any effect on the memory contents. 09.07.05 Rev 1 All data sheets are subject to change without notice 14 (c)2005 Maxwell Technologies All rights reserved 20 Megabit (512K x 40-Bit) EEPROM MCM 79LV2040 Memory 100 PIN STACKED FLAT PACKAGE SYMBOL MIN A b c D E E1 E2 E3 e L Q S1 N .330 .013 .005 .400 .006 .006 1.346 .882 -.702 1.825 DIMENSION NOM .448 .008 .008 1.366 .897 -.708 1.900 0.025BSC .340 .018 .075 100 .350 .023 -MAX .500 .010 .010 1.388 .912 .950 --- Note: All dimensions in inches 09.07.05 Rev 1 All data sheets are subject to change without notice 15 (c)2005 Maxwell Technologies All rights reserved 20 Megabit (512K x 40-Bit) EEPROM MCM Important Notice: 79LV2040 These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies' products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies' liability shall be limited to replacement of defective parts. Memory 09.07.05 Rev 1 All data sheets are subject to change without notice 16 (c)2005 Maxwell Technologies All rights reserved 20 Megabit (512K x 40-Bit) EEPROM MCM Product Ordering Options 79LV2040 Model Number 79C0832 RP 79LV2040 F X -XX Feature Access Time Option Details 20 = 200 ns 25 = 250 ns Screening Flow Multi Chip Module (MCM)1 K = Maxwell Class K H = Maxwell Class H I = Industrial (testing @ -55C, +25C, +125C) E = Engineering (testing @ +25C) Memory Package F = Flat Pack Radiation Feature RP = RAD-PAK(R) package Base Product Nomenclature 20 Megabit (512K x 40-Bit) EEPROM MCM 1) Products are manufactured and screened to Maxwell Technologies self-defined Class H and Class K flows. 09.07.05 Rev 1 All data sheets are subject to change without notice 17 (c)2005 Maxwell Technologies All rights reserved |
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