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 7MBR75SD060
PIM/Built-in converter with thyristor and brake (S series) 600V / 75A / PIM
Features
* Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit
IGBT Modules
Applications
* Inverter for Motor Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C unless without specified)
Item Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power disspation Repetitive peak reverse voltage(Diode) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge 0n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP PC VRRM VDRM VRRM IT(AV) ITSM Tjw VRRM IO IFSM I2t Tj Tstg Viso Continuous 1ms 1 device Condition Rating 600 20 75 150 75 300 600 20 50 100 200 600 800 800 75 750 125 800 75 525 1378 +150 -40 to +125 AC 2500 AC 2500 1.7 *1 Unit V V A A A W V V A A W V V V A A C V A A A 2s C C V V N*m
Brake
Inverter
Continuous 1ms 1 device
Thyristor
50Hz/60Hz sine wave Tj=125C, 10ms half sine wave
Converter
50Hz/60Hz sine wave Tj=150C, 10ms half sine wave
Junction temperature (except Thyristor) Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque
AC : 1 minute
*1 Recommendable value : 1.3 to 1.7 N*m (M4) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26 should be connected together and shorted to copper base.
IGBT Module
Electrical characteristics (Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage
Inverter
7MBR75SD060
Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM IDM IRRM IGT VGT VTM VFM IRRM R B Condition VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=75mA VGE=15V, Ic=75A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=300V IC=75A VGE=15V RG=33 IF=75A chip terminal IF=75A VCES=600V, VGE=0V VCE=0V, VGE=20V IC=50A, VGE=15V chip terminal VCC=300V IC=50A VGE=15V RG=51 VR=600V VDM=800V VRM=800V VD=6V, IT=1A VD=6V, IT=1A ITM=75A chip terminal IF=75A chip terminal VR=800V T=25C T=100C T=25/50C Characteristics Typ. Max. 200 200 5.5 7.8 8.5 1.8 2.1 2.55 7500 0.45 0.25 0.40 0.05 1.7 2.0 1.2 0.6 1.0 0.35 2.7 300 200 200 2.55 1.2 0.6 1.0 0.35 200 1.0 1.0 100 2.5 1.18 Unit A nA V V pF s
Min.
Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage
V ns A nA V s
Turn-on time Turn-off time Reverse current off-state current Reverse current Gate trigger current Gate trigger voltage On-state voltage Forward on voltage
1.8 2.05 0.45 0.25 0.40 0.05
Brake
Thyristor
Converter
1.1 1.2 1.1 1.2 5000 495 3375
A mA mA mA V V V
Thermistor
Reverse current Resistance B value
1.5 200 520 3450
A K
465 3305
Thermal resistance Characteristics
Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Thyristor Converter Diode With thermal compound Characteristics Typ. Max. 0.42 0.90 0.63 0.56 0.70 0.05 Unit
Thermal resistance ( 1 device )
Rth(j-c)
C/W
Contact thermal resistance
*
Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
IGBT Module
Characteristics (Representative)
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.)
7MBR75SD060
200
200
[ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.)
VGE= 20V 150
15V
12V 150
VGE= 20V
15V
12V
Collector current : Ic [ A ]
100
Collector current : Ic [ A ]
100
50 10V
50
10V
0 0 1 2 3 4 5
0 0 1 2 3 4 5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
200
[ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
10
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.)
Tj= 25C 150
Tj= 125C
Collector - Emitter voltage : VCE [ V ]
8
Collector current : Ic [ A ]
6
100
4
50
Ic=150A 2 Ic= 75A Ic= 37.5A
0 0 1 2 3 4
0 5 10 15 20 25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 30000
500
[ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=75A, Tj= 25C
25
10000
Capacitance : Cies, Coes, Cres [ pF ]
300
15
1000 Coes Cres
200
10
100
5
100 0 5 10 15 20 25 30 35
0 0 100 200 300 400
0 500
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
Gate - Emitter voltage : VGE [ V ]
Cies
Collector - Emitter voltage : VCE [ V ]
400
20
IGBT Module
7MBR75SD060
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=33, Tj= 25C
1000 1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg= 33, Tj= 125C
ton toff
ton toff
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
tr
tr
100
100
tf
tf
10 0 50 100 150
10 0 50 100 150
Collector current : Ic [ A ]
Collector current : Ic [ A ]
[ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=75A, VGE=15V, Tj= 25C
5000 8
[ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=33
ton
Switching time : ton, tr, toff, tf [ nsec ]
1000
toff tr
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eon(125C) 6 Eoff(125C)
Eon(25C) 4 Eoff(25C)
100
tf
2 Err(125C)
Err(25C) 10 10 100 300 0 0 50 100 150
Gate resistance : Rg [ ]
Collector current : Ic [ A ]
[ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=75A, VGE=15V, Tj= 125C
15 800
[ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=33, Tj<=125C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eon
700
600 10
Collector current : Ic [ A ]
500
400
Eoff 5
SCSOA (non-repetitive pulse)
300
200
100 Err 0 10 100 300 0 0 200 400 600 800 RBSOA (Repetitive pulse)
Gate resistance : Rg [ ]
Collector - Emitter voltage : VCE [ V ]
IGBT Module
7MBR75SD060
[ Inverter ] Forward current vs. Forward on voltage (typ.)
200 300
[ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=33
Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ]
150 Tj=125C
trr(125C) 100
Forward current : IF [ A ]
Tj=25C
trr(25C) Irr(125C) Irr(25C)
100
50
0 0 1 2 3
10 0 50 100 150
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
[ Converter ] Forward current vs. Forward on voltage (typ.)
200 200
[ Thyristor ] On-state current vs. On-state voltage (typ.)
Tjw= 125C 100 150
Tjw= 25C
100
Instantaneous on-state current [ A ]
2.0
Tj= 25C
Tj= 125C
Forward current : IF [ A ]
10
50
5
0 0.0
0.4
0.8
1.2
1.6
2 0.0
0.4
0.8
1.2
1.6
2.0
Forward on voltage : VFM [ V ]
Instantaneous on-state voltage [ V ]
Transient thermal resistance
5 200 100
[ Thermistor ] Temperature characteristic (typ.)
Thermal resistanse : Rth(j-c) [ C/W ]
1
Resistance : R [ k ]
1
FWD[Inverter] Conv. Diode IGBT[Brake] Thyristor IGBT[Inverter]
10
0.1
1
0.01 0.001
0.01
0.1
0.1 -60
-40
-20
0
20
40
60
80
100
120
140
160
180
Pulse width : Pw [ sec ]
Temperature [ C ]
IGBT Module
7MBR75SD060
120
[ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.)
[ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.)
120
VGE= 20V 15V 100
12V 100
VGE= 20V
15V
12V
Collector current : Ic [ A ]
80
Collector current : Ic [ A ]
80
60
60
40
40 10V
20
10V
20
0 0 1 2 3 4 5
0 0 1 2 3 4 5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
[ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
120 10
[ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.)
Tj= 25C 100
Tj= 125C
80
Collector - Emitter voltage : VCE [ V ]
8
Collector current : Ic [ A ]
6
60
4
40
Ic=100A 2 Ic= 50A Ic= 25A
20
0 0 1 2 3 4
0 5 10 15 20 25
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
[ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C
20000 500
[ Brake ] Dynamic Gate charge (typ.) Vcc=300V, Ic=50A, Tj= 25C
25
10000
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
400
20
Cies
300
15
1000
200
10
Coes Cres
100
5
100 0 5 10 15 20 25 30 35
0 0 50 100 150 200 250
0 300
Collector - Emitter voltage : VCE [ V ]
Gate charge : Qg [ nC ]
Gate - Emitter voltage : VGE [ V ]
IGBT Module
Outline Drawings, mm
7MBR75SD060
Marking : White Marking : White
Equivalent Circuit Schematic
[ Converter ]
21 (P)
[ Thyristor ]
26
[ Brake ]
22(P1)
[ Inverter ]
[ Thermistor ]
8 25 20 (Gu) 18 (Gv ) 16 (Gw)
9
1(R)
2(S)
3(T) 19(Eu) 7(B)
17(Ev ) 4(U)
15(Ew) 5(V)
6(W)
14(Gb) 23(N) 24(N1)
13(Gx)
12(Gy )
11(Gz) 10(En)


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