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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8050SS
TRANSISTORNPN (c) TO 92
FEATURES Power dissipation PCM : Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(c) 1 DC current gain hFE(c) 2 Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) VCE= 1 V , IC=800 mA IC= 800 mA, IB= 80 mA IC= 800mA, IB= 80 mA VCE= 10 V, I = 50mA C Transition frequency 40 0.5 1.2 V V
1
W
Tamb=25ae(c)
1.EMITTER
2. COLLECTOR
3. BASE
123
unless
Test
otherwise
MIN 40 25 5
specified(c)
TYP MAX UNIT V V V 0.1 0.1 0.1 |I A |I A |I A
conditions
Ic= 100 |I IE=0 A IC= 0.1 mA , IB=0
IE= 100 |I A IC=0 VCB= 40 VCE= 20 VEB= 5 V, V, V, IE=0 IB=0 IC=0
VCE= 1 V , IC= 100 mA
85
300
f
T
100 f =30 MHz
MHz
CLASSIFICATION OF h FE(1)
Rank Range B 85-160 C 120-200 D 160-300
TO-92 PACKAGE OUTLINE DIMENSIONS
D
D1
A
A1
E
b |O
e e1
Symbol A A1 b c D D1 E e e1 L O
Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min
L
Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169
C

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