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AAT7551
20V P-Channel Power MOSFET General Description
The AAT7551 is a dual low threshold P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-highdensity MOSFET process and space-saving, small outline, J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of an SC70JW-8 package.
Features
* * * Drain-Source Voltage (max): -20V Continuous Drain Current1 (max): -2.7A @ 25C Low On-Resistance: -- 100m @ VGS = -4.5V -- 175m @ VGS = -2.5V
Dual SC70JW-8 Package
Top View
D1 8 D1 7 D2 6 D2 5
Applications
* * * Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones
Absolute Maximum Ratings
TA = 25C, unless otherwise noted. Symbol
VDS VGS ID IDM IS TJ TSTG
1 S1
2 G1
3 S2
4 G2
Description
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ = 150C1 Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 Operating Junction Temperature Range Storage Temperature Range TA = 25C TA = 70C
Value
-20 12 2.7 2.2 8 -0.6 -55 to 150 -55 to 150
Units
V
A
C C
Thermal Characteristics1
Symbol
RJA RJA2 RJF PD
Description
Junction-to-Ambient Steady State Junction-to-Ambient t<5 Seconds Junction-to-Foot Maximum Power Dissipation TA = 25C TA = 70C
Typ
132 83 60
Max
165 104 72 1.2 0.75
Units
C/W
W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RJF + RFA = RJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RJF is guaranteed by design; however, RCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2. Pulse test: Pulse Width = 300s. 7551.2005.04.1.0
1
AAT7551
20V P-Channel Power MOSFET Electrical Characteristics
TJ = 25C, unless otherwise noted. Symbol Description
DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) Drain-Source On-Resistance1
Conditions
VGS = 0V, ID = -250A
Min
-20
Typ
Max
Units
V
VGS = -4.5V, ID = -2.7A VGS = -2.5V, ID = -2.0A 1 ID(ON) On-State Drain Current VGS = -4.5V, VDS = -5V (pulsed) VGS(th) Gate Threshold Voltage VGS = VDS, ID = -250A IGSS Gate-Body Leakage Current VGS = 12V, VDS = 0V V = 0V, VDS = -20V IDSS Drain Source Leakage Current GS VGS = 0V, VDS = -16V, TJ = 70C2 1 gfs Forward Transconductance VDS = -5V, ID = -2.7A Dynamic Characteristics2 QG Total Gate Charge VDS = -10V, RD = 3.7, VGS = -4.5V QGS Gate-Source Charge VDS = -10V, RD = 3.7, VGS = -4.5V QGD Gate-Drain Charge VDS = -10V, RD = 3.7, VGS = -4.5V tD(ON) Turn-On Delay VDS = -10V, RD = 3.7, VGS = -4.5V, RG = 6 tR Turn-On Rise Time VDS = -10V, RD = 3.7, VGS = -4.5V, RG = 6 tD(OFF) Turn-Off Delay VDS = -10V, RD = 3.7, VGS = -4.5V, RG = 6 tF Turn-Off Fall Time VDS = -10V, RD = 3.7, VGS = -4.5V, RG = 6 Source-Drain Diode Characteristics VSD Source-Drain Forward VGS = 0, IS = -2.7A Voltage1 IS Continuous Diode Current3
80 140 -8 -0.6
100 175
m A V nA A S
100 -1 -5 4 5.9 1 2 22 10 20 40 -1.3 -0.6
nC
ns
V A
1. Pulse test: Pulse Width = 300s. 2. Guaranteed by design. Not subject to production testing. 3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RJF + RFA = RJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RJF is guaranteed by design; however, RCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2
7551.2005.04.1.0
AAT7551
20V P-Channel Power MOSFET Typical Characteristics
TJ = 25C, unless otherwise noted. Output Characteristics
8
Transfer Characteristics
8
5V 4.5V 4V
3.5V
3V 2.5V ID (A)
6
VD=VG
25C 125C -55C
6
IDS (A)
4
4
2V
2 2
1.5V
0 0 0.5 1 1.5 2 2.5 3 0 0 1 2 3 4 5
VDS (V)
VGS (V)
On-Resistance vs. Drain Current
0.3 0.25
On-Resistance vs. Gate-to-Source Voltage
0.4
ID = 2.7A
0.3
RDS(ON) ()
0.2
VGS = 2.5 V
0.15 0.1 0.05 0 0 2 4 6 8
RDS(ON) ()
0.2
0.1
VGS = 4.5 V
0 0 1 2 3 4 5
ID (A)
VGS (V)
On-Resistance vs. Junction Temperature
1.6 1.5 0.4
Threshold Voltage
ID = 250A
Normalized RDS(ON)
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6
VGS(th) Variance (V)
VGS = 4.5V ID = 2.7A
0.3 0.2 0.1 0 -0.1 -0.2 -0.3 -50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
TJ (C)
TJ (C)
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AAT7551
20V P-Channel Power MOSFET Typical Characteristics
TJ = 25C, unless otherwise noted. Gate Charge
5 4 3 2 1 0 0 1 2 3 4 5 6
Source-Drain Diode Forward Voltage
100
VD = 10V ID = 2.7A
10
VGS (V)
IS (A)
1
TJ = 150C
0.1 0 0 .2 0.4 0 .6 0.8
TJ = 25C
1
1.2
QG, Charge (nC)
VSD (V)
Capacitance
600
Single Pulse Power, Junction to Ambient
50 45
Capacitance (pF)
Ciss
400
40 35
Power (W)
30 25 20 15 10 5 0 0.0001
200
Crss
Coss
0 0 5 10 15 20
0.001
0.01
0.1
1
10
100
1000
VDS (V)
Time (s)
Transient Thermal Response, Junction to Ambient
Normalized Effective Transient Thermal Impedance
10
1 .5 .2 0.1 .1 .02 .01 0.01 Single Pulse 0.001 0.01 0.1 1 10 100 1000
0.0001
Time (s)
4
7551.2005.04.1.0
AAT7551
20V P-Channel Power MOSFET Ordering Information
Package
SC70JW-8
Marking1
KDXYY
Part Number (Tape and Reel)2
AAT7551IJS-T1
Package Information
SC70JW-8
0.50 BSC 0.50 BSC 0.50 BSC
1.75 0.10 0.225 0.075 2.00 0.20
2.20 0.20
0.048REF 0.15 0.05
0.85 0.15
1.10 MAX
0.100
7 3
0.45 0.10 2.10 0.30
4 4
All dimensions in millimeters.
1. XYY = assembly and date code. 2. Sample stock is generally held on part numbers listed in BOLD.
0.05 0.05
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AAT7551
20V P-Channel Power MOSFET
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed.
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6
7551.2005.04.1.0

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