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APT10035JLL
1000V 25A
S G D
0.350
S
POWER MOS 7
(R)
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
ISOTOP (R)
2 T-
27
"UL Recognized"
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package
D G S
All Ratings: TC = 25C unless otherwise specified.
APT10035JLL UNIT Volts Amps
1000 25 100 30 40 520 4.16 -55 to 150 300 25 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
1000 25 0.350 100 500 100 3 5
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 14A)
Ohms A nA Volts
3-2003 050-7016 Rev C
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol C iss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT10035JLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 500V ID = 28A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 28A @ 25C RG = 1.6 6 INDUCTIVE SWITCHING @ 25C VDD = 670V, VGS = 15V ID = 28A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 670V VGS = 15V ID = 28A, RG = 5
MIN
TYP
MAX
UNIT
5185 881 160 186 24 122 12 10 36 9 900 623 1423 779 J ns
nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns C
25 100 1.3 1170 16.28 10
(Body Diode) (VGS = 0V, IS = -ID25A)
Reverse Recovery Time (IS = -ID25A, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID25A, dl S /dt = 100A/s) Peak Diode Recovery
dv/ dt 5
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.24 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 9.60mH, RG = 25, Peak IL = 25A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID25A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
, THERMAL IMPEDANCE (C/W)
0.9 0.20 0.7 0.15 0.5 Note:
PDM
3-2003
0.10 0.3 0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE
t1 t2
JC
050-7016 Rev C
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
Z
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
RC MODEL
APT10035JLL
60 VGS =15,10 & 8V
ID, DRAIN CURRENT (AMPERES)
Junction temp. ( "C) 0.0528 0.0203F
50 7V 40 6.5V
Power (Watts)
0.0651
0.173F
30 6V 20 5.5V 5V
0.123 Case temperature
0.490F
10 0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 80
ID, DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
NORMALIZED TO V = 10V @ 14A
GS
70 60 50 40 30 20 10 0
1.30 1.20 VGS=10V
1.10
TJ = +125C TJ = -55C TJ = +25C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
1.00
VGS=20V
0.90 0.80
0
10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
I V
D
1.15
ID, DRAIN CURRENT (AMPERES)
20
1.10
1.05
15
1.00
10
0.95 0.90 0.85 -50
5
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
= 14A = 10V
0 25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
2.0
1.1
1.0
1.5
0.9 0.8
1.0
0.5
0.7 0.6 -50
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7016 Rev C
3-2003
Typical Performance Curves
100
ID, DRAIN CURRENT (AMPERES)
APT10035JLL
20,000 10,000 Ciss 100S
C, CAPACITANCE (pF)
50
OPERATION HERE LIMITED BY RDS (ON)
10
1,000
Coss
1mS TC =+25C TJ =+150C SINGLE PULSE 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16
I
D
10mS
1
= 28A
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100 100
12
VDS=200V VDS=500V
TJ =+150C TJ =+25C 10
8
VDS=800V
4
50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 180 160 140 td(off)
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 80
V
DD G
= 670V
R
= 5
T = 125C
J
60
V
DD G
L = 100H
tf
td(on) and td(off) (ns)
120 100 80 60 40 20 0 0
= 670V
R
= 5
T = 125C
J
tr and tf (ns)
L = 100H
40 tr 20
td(on) 0 30 40 50 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
10
20
30 40 50 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 5000
0
10
20
2500
= 670V R = 5
Eon
SWITCHING ENERGY (J)
SWITCHING ENERGY (J)
2000
T = 125C
J
4000
L = 100H E ON includes diode reverse recovery.
Eoff
1500
3000 Eon 2000
1000
V I
DD
= 670V
3-2003
D J
= 28A
500 Eoff 0 30 40 50 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 10 20
1000
T = 125C L = 100H E ON includes diode reverse recovery.
050-7016 Rev C
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
APT10035JLL
Gate Voltage
10 % td(on) tr
Drain Current
90%
T = 125 C J
t
d(off)
Gate Voltage
T = 125 C J
90% 5% 10 % 5%
Drain Voltage
Drain Voltage
90% 10% tf 0
Drain Current
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF120B
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
Gate
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7016 Rev C
3-2003
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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