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APT20M16B2LL APT20M16LLL
POWER MOS 7
(R)
200V 100A 0.016
B2LL
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current Pulsed Drain Current
1 7
T-MAXTM
TO-264
LLL
* Increased Power Dissipation * Easier To Drive * Popular T-MAXTM or TO-264 Package
D G S
All Ratings: TC = 25C unless otherwise specified.
APT20M16B2LL_LLL UNIT Volts Amps
200
@ TC = 25C
100 400 30 40 694 5.56 -55 to 150 300 100 50 3000
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1 4
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
200 0.016 100 500 100 3 5
(VGS = 10V, ID = 50A)
Ohms A nA Volts
6-2004 050-7014 Rev C
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT20M16 B2LL_LLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 100V ID = 100A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 100V ID = 100A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 25C VDD = 133V, VGS = 15V ID = 100A, RG = 5 6 INDUCTIVE SWITCHING @ 125C VDD = 133V, VGS = 15V ID = 100A, RG = 5
MIN
TYP
MAX
UNIT
7220 2330 145 140 65 120 15 31 29 4 850 930 935 985
MIN TYP MAX UNIT Amps Volts ns C nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
100 400 1.3 360 6.7 5
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = -ID100A)
Reverse Recovery Time (IS = -ID100A, dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID100A, dl S /dt = 100A/s) Peak Diode Recovery
dv/ dt 5
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W
0.18 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.20
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 0.60mH, RG = 25, Peak IL = 100A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID100A di/dt 700A/s VR 200V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 The maximum current is limited by lead temperature
0.16
0.9
0.7 0.12 0.5 0.08 0.3 0.04 0.1 0.05 0 10-5 10-4 SINGLE PULSE Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
6-2004
050-7014 Rev C
Z
JC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
Junction temp. (C) RC MODEL
300 250
APT20M16 B2LL_LLL
VGS=15V 10V
ID, DRAIN CURRENT (AMPERES)
0.0271
0.00899F
9V 200 8.5V 150 100 50 0 8V 7.5V 7V 6.5V
Power (watts)
0.0656
0.0210F
0.0859 Case temperature. (C)
0.293F
ID, DRAIN CURRENT (AMPERES)
250 200 150 100 50 0
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 300 TJ = -55C
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4
NORMALIZED TO = 10V @ 50A V
GS
1.3 1.2 1.1 1.0 0.9 VGS=20V 0.8 0 20 40 60 80 100 120 140 160 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
VGS=10V
TJ = +25C TJ = +125C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
140 120 100 80 60 40 20 0
Lead Limited
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I V
D
25
0.90
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6
-50
= 50A = 10V
GS
2.0
1.5
1.0
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
-25
050-7014 Rev C
6-2004
400
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000
APT20M16 B2LL_LLL
Ciss
ID, DRAIN CURRENT (AMPERES)
100 50
C, CAPACITANCE (pF)
100S
5,000 Coss 1,000 500
1mS 10 10mS TC =+25C TJ =+150C SINGLE PULSE 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
1
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
14 12 10 8 6 4 2 40 60 80 100 120 140 160 180 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 100 90 80 td(off)
V = 133V
IDR, REVERSE DRAIN CURRENT (AMPERES)
I
= 100A
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 220 100 50 TJ =+150C TJ =+25C
100
Crss
VDS=40V VDS=100V
VDS=160V
10 5
0
0
20
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 160 140 120
V
DD G
1
= 133V
R
= 5
T = 125C
J
L = 100H
td(on) and td(off) (ns)
70 60 50 40 30 20 10 0
DD G
tr and tf (ns)
R
= 5
100 80 60 40 20
T = 125C
J
tf
L = 100H
td(on)
tr
20
80 100 120 140 160 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
40
60
80 100 120 140 160 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 3500
V
DD
0
20
40
60
2000
= 133V
= 133V
R
= 5
T = 125C
J
Eoff
SWITCHING ENERGY (J)
3000 2500 2000
I
D J
= 100A
T = 125C L = 100H E ON includes diode reverse recovery
1500
Eon and Eoff (J)
L = 100H E ON includes diode reverse recovery
Eoff
1000
Eon 1500 1000 500
6-2004
500
Eon
050-7014 Rev C
0
80 100 120 140 160 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
20
40
60
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
Typical Performance Curves
90% 10% Gate Voltage T 125C J
APT20M16 B2LL_LLL
Gate Voltage
td(off) tf
Drain Voltage
T 125C J
td(on) tr
90%
Drain Current 5%
90% 10% 0
5% 10% Switching Energy
Drain Voltage Switching Energy
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT100S20
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline (B2LL)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-264 (L) Package Outline (LLL)
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
1.01 (.040) 1.40 (.055)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7014 Rev C
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125)
6-2004
19.81 (.780) 20.32 (.800)
Gate Drain Source
Gate Drain Source

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