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Parallel
S
ISOTOP fi
OT
22
7
APT2X61S20J
APT2X61S20J
200V 75A
"UL Recognized"
file # E145592
DUAL DIE ISOTOP(R) PACKAGE
HIGH VOLTAGE SCHOTTKY DIODES
PRODUCT APPLICATIONS
* Parallel Diode * * * * *
-Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) 48 Volt Output Rectifiers High Speed Rectifiers
PRODUCT FEATURES
* Ultrafast Recovery Times * Soft Recovery Characteristics * Popular SOT-227 Package * Low Forward Voltage * High Blocking Voltage * Low Leakage Current
PRODUCT BENEFITS
* Low Losses * Low Noise Switching * Cooler Operation * Higher Reliability Systems * Increased System Power
Density
MAXIMUM RATINGS
Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM TJ,TSTG EAVL Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage
All Ratings: TC = 25C unless otherwise specified.
APT2X61S20J UNIT
200
Volts
Maximum Average Forward Current (TC =106C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Operating and StorageTemperature Range Avalanche Energy (2A, 30mH)
75 137 600 -55 to 150 60
C mJ Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol IF = 60A VF Forward Voltage IF = 120A IF = 60A, TJ = 125C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V
Microsemi Website - http://www.microsemi.com
MIN
TYP
MAX
UNIT
.83 .98 .72
.90
Volts
VR = 200V, TJ = 125C
25 300
mA pF
053-6044 Rev C
7-2006
VR = 200V
1
DYNAMIC CHARACTERISTICS
Symbol trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 60A, diF/dt = -700A/s VR = 133V, TC = 125C IF = 60A, diF/dt = -200A/s VR = 133V, TC = 125C Test Conditions IF = 60A, diF/dt = -200A/s VR = 133V, TC = 25C MIN TYP
APT2X61S20J MAX UNIT ns nC
55 160 5 100 490 10 80 1100 27 -
-
Amps ns nC Amps ns nC Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC VIsolation WT Characteristic / Test Conditions Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight MIN TYP MAX UNIT C/W Volts
.54 2500 1.03 29.2 10 1.1
oz g lb*in N*m
Torque
Maximum Terminal & Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.60
, THERMAL IMPEDANCE (C/W)
0.50 0.40 0.30 0.20 0.10 0
D = 0.9
0.7 0.5
Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
0.3
JC
0.1 0.05 10-5 10-4
Z
SINGLE PULSE
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ ( C)
0.143 Dissipated Power (Watts) 0.00623 0.0943 0.543 0.230
TC ( C)
0.167
7-2006
053-6044 Rev C
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
TYPICAL PERFORMANCE CURVES
200 180
IF, FORWARD CURRENT (A) trr, REVERSE RECOVERY TIME (ns)
120 100 80 60 40 20 0
APT2X61S20J
TJ = 125C VR = 133V
TJ = -55C TJ = 25C
120A 60A
160 140 120 100 80 60 40 20 0 0 TJ = 125C TJ = 150C
30A
0.2 0.4 0.6 0.8 1 1.2 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage
IRRM, REVERSE RECOVERY CURRENT (A)
TJ = 125C VR = 133V
0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change 35 30 25 20 60A 15 10 5 0 30A
TJ = 125C VR = 133V
1800
Qrr, REVERSE RECOVERY CHARGE (nC)
1600 1400 1200 1000 800 600 400 200 0 0
120A
120A
60A
30A
200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 0.8 0.6 0.4 0.2 0.0 I RRM t rr Qrr Qrr
0 200 400 600 800 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 160 140 120
IF(AV) (A)
Duty cycle = 0.5 TJ = 150C
Kf, DYNAMIC PARAMETERS (Normalized to 700A/s)
100 80 60 40 20
t rr
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 3500 3000 2500 2000 1500 1000 50 0
0
75 100 125 150 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 100 50
0
25
50
CJ, JUNCTION CAPACITANCE (pF)
PEAK AVALANCHE CURRENT (A)
10
7-2006
5
1 1 1 10 100 1000 2200 Time in Avalanche (s) Figure 9. Single Pulse UIS SOA
10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage
053-6044 Rev C
APT2X61S20J
Vr +18V 0V D.U.T. 30H
trr/Qrr Waveform
diF /dt Adjust
APT20M36BLL
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
SOT-227 Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)
7-2006
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Parallel Cathode 1
APT2X61S20J
Anode 1
053-6044 Rev C
Dimensions in Millimeters and (Inches)
Cathode 2
Anode 2
ISOTOP(R) is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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