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| APT60M75PVR 600V 60.5A 0.075 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. P-Pack * Faster Switching * Lower Leakage * 100% Avalanche Tested * New High Power P-Pack Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT60M75PVR UNIT Volts Amps 600 RY A IN IM MIN 60.5 242 30 40 625 5.0 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Volts Watts W/C C Amps mJ Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 -55 to 150 300 60.5 50 3600 (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions TYP MAX UNIT Volts Amps Drain-Source Breakdown Voltage (VGS = 0V, I D = 250A) On State Drain Current 2 PR EL 4 600 60.5 0.075 100 500 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5837 Rev - Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) APT Website - http://www.advancedpower.com Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT60M75PVR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT 16500 2000 750 700 85 330 25 20 90 12 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 RY MIN TYP MAX UNIT Amps Volts ns C A IN IM 880 31 60.5 242 1.3 (Body Diode) (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case EL MIN TYP MAX UNIT C/W PR 0.20 40 Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.97mH, R = 25, Peak I = 60.5A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. P-Pack Package Outline 41.53 (1.635) 41.02 (1.615) 35.18 (1.385) 34.67 (1.365) 28.70 (1.130) 28.45 (1.120) 3.43 (.135) 2.92 (.115) (4-Places) 9.27 (.365) 8.64 (.340) 1.40 (.055) 1.02 (.040) 3.43 (.135) 2.92 (.115) (4-Places) Source Drain 4.06 (.160) 3.81 (.150) (5 Places) 51.05 (2.01) 50.55 (1.99) 35.81 (1.41) 35.31 (1.39) 29.34 (1.155) 29.08 (1.145) 050-5837 Rev - 10.92 (.430) 10.67 (.420) 4.39 (.173) 4.14 (.163) (4 Places) 12.45 (.490) 11.94 (.470) Gate Source Sense 5.33 (.210) 4.83 (.190) 11.63 (.458) 11.13 (.438) .635 (.025) .381 (.015) Dimensions in Millimeters and (Inches) |
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