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| APTDF100H20G Diode Full Bridge Power Module + AC1 AC2 VRRM = 200V IC = 100A @ Tc = 80C Application * * * * Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features * * * * * * * Benefits * AC2 - Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration + - AC1 * * * * * * Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings Symbol VR VRRM IF(A V) IF(RMS) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Duty cycle = 50% Current RMS Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 8.3ms Max ratings 200 TC = 25C TC = 80C TC = 45C TC = 45C 145 100 145 500 Unit V A June, 2006 1-4 APTDF100H20G - Rev 1 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTDF100H20G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM CT Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Test Conditions IF = 100A IF = 200A IF = 100A Tj = 125C Tj = 25C VR = 200V Tj = 125C VR = 200V Min Typ 1.0 1.4 0.9 Max 1.1 Unit V 250 500 400 A pF Dynamic Characteristics Symbol Characteristic trr trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions IF=1A,VR=30V di/dt = 100A/s Tj = 25C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C IF = 100A VR = 133V di/dt=1000A/s Tj = 125C Min Typ 39 60 110 200 840 6 15 80 1.91 44 Max Unit ns ns nC A ns C A IF = 100A VR = 133V di/dt = 200A/s Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 2.5 Typ Max 0.55 150 125 100 4.7 160 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 www.microsemi.com 2-4 APTDF100H20G - Rev 1 June, 2006 APTDF100H20G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage 300 trr, Reverse Recovery Time (ns) IF, Forward Current (A) 250 200 150 100 50 0 0.0 0.5 1.0 1.5 2.0 VF, Anode to Cathode Voltage (V) QRR vs. Current Rate Charge TJ=125C VR=133V 100 A 130 A 50 A TJ=150C TJ=125C TJ =25C TJ=-55C 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 120 100 Trr vs. Current Rate of Charge 100 A T J=125C VR=133V 130 A 80 50 A 60 40 0 200 400 600 800 1000 1200 -diF/dt (A/s) IRRM vs. Current Rate of Charge T J=125C V R=133V 100 A 130 A 50 A QRR, Reverse Recovery Charge (C) 1.75 1.50 1.25 1.00 0.75 0.50 0 IRRM, Reverse Recovery Current (A) 2.00 50 40 30 20 10 0 0 200 400 600 800 1000 1200 200 400 600 800 1000 1200 -diF/dt (A/s) Capacitance vs. Reverse Voltage 3200 2800 C, Capacitance (pF) 2400 2000 1600 1200 800 400 0 1 10 100 1000 VR, Reverse Voltage (V) 25 0 25 50 IF(AV) (A) 100 75 50 -diF/dt (A/s) Max. Average Forward Current vs. Case Temp. 150 125 Duty Cycle = 0.5 TJ =150C 75 100 125 150 Case Temperature (C) www.microsemi.com 3-4 APTDF100H20G - Rev 1 June, 2006 APTDF100H20G SP4 Package outline (dimensions in mm) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTDF100H20G - Rev 1 Microsemi reserves the right to change, without notice, the specifications and information contained herein June, 2006 |
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