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| APTDF400AA170G Dual Common Anode diodes Power Module K1 A VRRM = 1700V IC = 400A @ Tc = 55C Application * * * * Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features * * * * * * * Benefits K1 A K2 K2 Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - M5 power connectors High level of integration * * * * * * Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Absolute maximum ratings Symbol VR VRRM IF(A V) IF(RMS) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Tc = 25C Tc = 55C Tj = 25C Max ratings 1700 480 400 500 1500 Unit V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-3 APTDF400AA170G - Rev 1 June, 2006 RMS Forward Current Non-Repetitive Forward Surge Current A APTDF400AA170G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM Diode Forward Voltage Maximum Reverse Leakage Current Test Conditions IF = 400A VR = 1700V Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min Tj = 25C IF = 400A VR = 900V di/dt = 4000A/s Min Typ 2.2 2.1 Max 2.5 750 1000 Unit V A Dynamic Characteristics Symbol Characteristic trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Typ 572 704 80 140 280 400 Max Unit ns C A Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 3500 -40 -40 -40 3 2 Typ Max 0.095 150 125 100 5 3.5 280 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 SP6 Package outline (dimensions in mm) www.microsemi.com 2-3 APTDF400AA170G - Rev 1 June, 2006 APTDF400AA170G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.1 Thermal Impedance (C/W) 0.9 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 0 0.00001 Forward Current vs Forward Voltage 1000 trr, Reverse Recovery Time (ns) IF, Forward Current (A) 800 600 400 200 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF, Anode to Cathode Voltage (V) QRR, Reverse Recovery Charge (C) QRR vs. Current Rate Charge TJ=125C V R=900V TJ=125C TJ=25C Trr vs. Current Rate of Charge 800 700 600 500 400 400 A 800 A TJ=125C V R=900V TJ=25C 300 200 0 200 A 5000 10000 15000 20000 25000 -diF/dt (A/s) IRRM vs. Current Rate of Charge IRRM, Reverse Recovery Current (A) 320 280 240 200 160 120 80 0 1600 1400 1200 1000 800 600 400 200 0 5000 10000 15000 20000 25000 -diF/dt (A/s) TJ=125C V R=900V 400 A 800 A 200 A 800 A 400 A 200 A 5000 10000 15000 20000 25000 -diF /dt (A/s) Max. Average Forward Current vs. Case Temp. 600 500 IF(AV) (A) Duty Cycle = 0.5 TJ=150C 400 300 200 100 0 0 25 50 75 100 125 150 Case Temperature (C) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 3-3 APTDF400AA170G - Rev 1 June, 2006 |
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