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APTGF150SK120T
Buck chopper NPT IGBT Power Module
VBUS Q1 G1 NTC2
VCES = 1200V IC = 150A @ Tc = 80C
Application * AC and DC motor control * Switched Mode Power Supplies Features * Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Easy paralleling due to positive TC of VCEsat * Low profile Max ratings 1200 200 150 300 20 961 300A @ 1200V Unit V A V W
APTGF150SK120T - Rev 0 January, 2005
E1 OUT
0/VBU S SENSE
0/VBU S
NTC1
0/VBUS SENSE
OUT
VBUS
0/VBUS
OUT
E1 G1
0/VBUS SENSE
NT C2 NT C1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-5
APTGF150SK120T
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions Tj = 25C VGE = 0V VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 150A Tj = 125C VGE = VCE, IC = 5 mA VGE = 20V, VCE = 0V Min Typ 0.1 5 3.2 3.9 Max 3 3.7 6.5 500 Unit mA V V nA
4.5
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 150A R G = 5.6 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 150A R G = 5.6
Min
Typ 10.2 1.4 0.75 120 50 310 20 130 60 360 30 18 8
Max
Unit nF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF(A V) VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 70C
Min 1200
Typ
Max 500 1000
Unit V A A
Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage
VR=1200V
50% duty cycle
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
IF = 200A IF = 400A IF = 200A IF = 200A VR = 800V IF = 200A VR = 800V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
200 2 2.3 1.8 420 520 2.5 10.7
2.5 V
ns C
APTGF150SK120T - Rev 0 January, 2005
di/dt =400A/s
di/dt =400A/s
APT website - http://www.advancedpower.com
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APTGF150SK120T
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K Min Typ 68 4080 Max Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt
Thermal and package characteristics
Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
Min
Typ
Max 0.13 0.32 150 125 100 4.7 160
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 -40 -40 -40
To heatsink
M5
Package outline
APT website - http://www.advancedpower.com
3-5
APTGF150SK120T - Rev 0 January, 2005
APTGF150SK120T
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 300
TJ = 125C VGE =15V VGE=20V VGE =12V
300 250
IC (A)
T J=25C
250 200 IC (A) 150 100
TJ=125C
200 150 100 50 0 0 1 2 3 VCE (V) 4 5 6
V GE=9V
50 0 0 1 2 3 4 VCE (V) 5 6
300 250 200
Transfert Characteristics 56 48 40 E (mJ) 32 24 16
T J=25C T J=125C
Energy losses vs Collector Current
V CE = 600V V GE = 15V RG = 5.6 T J = 125C
Eon
IC (A)
150 100 50 0 5 6 7
8 0 0 50 100 150 IC (A) 200
Eoff
8
9
10
11
12
250
300
V GE (V) Switching Energy Losses vs Gate Resistance 70 60 50 E (mJ) 40 30 20 10 0 0 5 10 15 20 25 30 35 40 45 50 Gate Resistance (ohms)
Eoff VCE = 600V VGE =15V IC = 150A TJ = 125C
Reverse Bias Safe Operating Area 350 300
Eon
250 IC (A) 200 150 100 50 0 0 300 600 900 VCE (V) 1200 1500
VGE=15V T J=125C RG=5.6
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.14 Thermal Impedance (C/W) 0.12 0.1 0.08 0.06 0.04 0.02 0 0.00001 0.3 0.1 0.05 0.0001 0.001 0.9 IGBT 0.7 0.5
Single Pulse 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
APT website - http://www.advancedpower.com
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APTGF150SK120T - Rev 0 January, 2005
APTGF150SK120T
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 100 90 80 70 60 50 40 30 20 10 0 0 40 80 120 IC (A) 160 200
ZVS hard switching ZCS VCE =600V D=50% RG=5.6 TJ =125C TC=75C
Forward Characteristic of diode 500 400 300 200 100 0 0 0.5 1 1.5 V F (V) 2 2.5 3
T J=25C
0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Diode
0.05 0 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
IC (A)
T J=125C
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTGF150SK120T - Rev 0 January, 2005

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