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| APTGT300DU170G Dual common source Trench + Field Stop IGBT(R) Power Module C1 Q1 G1 C2 Q2 G2 VCES = 1700V IC = 300A @ Tc = 80C Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant E1 E2 E G1 E1 C1 E C2 E2 G2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Reverse Bias Safe Operating Area 600A @ 1600V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT300DU170G - Rev 1 July, 2006 Max ratings 1700 400 300 600 20 1660 Unit V A V W APTGT300DU170G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 300A Tj = 125C VGE = VCE , IC = 5mA VGE = 20V, VCE = 0V Min Typ 2.0 2.4 5.8 Max 750 2.4 6.5 600 Unit A V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 300A R G = 2.2 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 300A R G = 2.2 VGE = 15V Tj = 125C VBus = 900V IC = 300A Tj = 125C R G = 2.2 Min Typ 26.5 1.1 0.88 370 40 650 180 400 50 800 300 96 Max Unit nF ns ns mJ 94 Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min 1700 Typ Max 750 1000 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1700V IF = 300A 300 1.8 1.9 385 490 76 124 35 70 2.2 V ns C mJ July, 2006 2-5 APTGT300DU170G - Rev 1 IF = 300A VR = 900V di/dt =3200A/s www.microsemi.com APTGT300DU170G Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Thermal and package characteristics Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode Min Typ Max 0.075 0.14 150 125 100 5 3.5 280 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 3500 -40 -40 -40 3 2 SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT300DU170G - Rev 1 July, 2006 APTGT300DU170G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 600 500 400 IC (A) TJ=125C VGE =13V TJ = 125C VGE =20V 600 500 IC (A) T J=25C 400 300 200 100 0 0 1 2 VCE (V) 3 4 300 VGE=15V 200 100 0 0 1 2 3 V CE (V) 4 5 VGE=9V Transfert Characteristics 600 500 400 IC (A) 300 200 100 0 5 6 7 8 9 V GE (V) Switching Energy Losses vs Gate Resistance 240 200 160 E (mJ) 120 80 40 0 0 3 6 9 12 Gate Resistance (ohms) 15 VCE = 900V VGE =15V IC = 300A T J = 125C Eon TJ=125C T J=125C TJ=25C 240 200 160 E (mJ) 120 Energy losses vs Collector Current VCE = 900V VGE = 15V RG = 2.2 T J = 125C Eon Eoff Er 80 40 0 10 11 12 13 0 100 200 300 IC (A) Reverse Bias Safe Operating Area 700 600 500 IC (A) 400 300 200 100 0 0 400 800 1200 1600 2000 VCE (V) V GE=15V T J=125C RG=2.2 Eoff Er 400 500 600 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 Thermal Impedance (C/W) 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.5 0.3 0.9 0.7 IGBT rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT300DU170G - Rev 1 July, 2006 APTGT300DU170G Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 20 VCE=900V D=50% RG =2.2 TJ=125C TC=75C Forward Characteristic of diode 600 500 TJ=25C 15 ZVS 400 IF (A) 300 T J=125C 10 ZCS 200 100 0 160 240 IC (A) 320 400 480 0 0.5 1 1.5 V F (V) 2 2.5 3 T J=125C 5 hard switching 0 0 80 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.16 Thermal Impedance (C/W) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 0.9 Diode 0 0.00001 rectangular Pulse Duration (Seconds) Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT300DU170G - Rev 1 Microsemi reserves the right to change, without notice, the specifications and information contained herein July, 2006 |
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