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APTGT30DDA60T3G Dual Boost chopper Trench + Field Stop IGBT(R) Power Module 13 14 VCES = 600V IC = 30A @ Tc = 80C Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction CR1 CR2 22 7 23 Q1 26 27 8 Q2 4 3 29 15 30 31 R1 32 16 Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design * High level of integration * Internal thermistor for temperature monitoring Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * Each leg can be easily paralleled to achieve a single boost of twice the current capability. * RoHS Compliant 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ... Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current TC = 25C TC = 80C TC = 25C TC = 25C TJ = 150C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT30DDA60T3G - Rev 1, Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Max ratings 600 50 30 60 20 90 60A @ 550V Unit V A V W June , 2006 APTGT30DDA60T3G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 30A Tj = 150C VGE = VCE , IC = 400A VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 300 Unit A V V nA 5.0 Dynamic Characteristics Symbol Characteristic Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 30A R G = 10 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 30A R G = 10 Tj = 25C VGE = 15V VBus = 300V Tj = 150C IC = 30A Tj = 25C R G = 10 Tj = 150C Min Typ 1600 110 50 110 45 200 40 120 50 250 60 0.16 0.3 0.7 1.05 Max Unit pF ns ns mJ mJ Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 600 Typ Max 250 500 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=600V IF = 30A VGE = 0V IF = 30A VR = 300V di/dt =1800A/s 30 1.6 1.5 100 150 1.5 3.1 0.34 0.75 2 V ns C mJ June , 2006 2-5 APTGT30DDA60T3G - Rev 1, www.microsemi.com APTGT30DDA60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K RT = R 25 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25 T: Thermistor temperature Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 1.6 2.45 175 125 100 4.7 110 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M4 2500 -40 -40 -40 2.5 SP3 Package outline (dimensions in mm) 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT30DDA60T3G - Rev 1, June , 2006 17 28 APTGT30DDA60T3G Typical Performance Curve 60 50 TJ=125C Output Characteristics (V GE=15V) TJ=25C Output Characteristics 60 TJ = 150C VGE=19V 50 T J=150C IC (A) 40 30 20 10 0 0 0.5 1 T J=25C 40 IC (A) 30 20 VGE =13V VGE =15V VGE =9V 10 0 1.5 VCE (V) 2 2.5 3 0 0.5 1 1.5 2 V CE (V) 2.5 3 3.5 60 50 40 Transfert Characteristics 2 T J=25C Energy losses vs Collector Current VCE = 300V VGE = 15V RG = 10 T J = 150C 1.5 E (mJ) IC (A) 1 0.5 TJ =25C Eoff 30 20 10 0 5 6 7 8 TJ =125C TJ=150C Er Eon 0 11 12 0 10 20 30 IC (A) Reverse Bias Safe Operating Area 70 60 50 IC (A) 40 30 20 VGE =15V TJ =150C RG=10 9 10 40 50 60 VGE (V) Switching Energy Losses vs Gate Resistance 2.5 2 E (mJ) 1.5 1 0.5 Eon Er VCE = 300V VGE =15V IC = 30A TJ = 150C Eon Eoff 10 0 70 0 0 0 10 20 30 40 50 60 Gate Resistance (ohms) 100 200 300 400 V CE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.8 Thermal Impedance (C/W) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9 IGBT 0.05 0 0.00001 Rectangular Pulse Duration in Seconds www.microsemi.com 4-5 APTGT30DDA60T3G - Rev 1, June , 2006 APTGT30DDA60T3G Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 ZCS V CE =300V D=50% RG=10 T J=150C Forward Characteristic of diode 60 50 40 IF (A) 30 20 T J=125C TJ=150C 80 60 40 20 0 0 ZVS T c=85C Hard switching 10 T J=25C 0 20 IC (A) 30 40 0 0.4 0.8 1.2 1.6 V F (V) 2 2.4 10 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 3 Thermal Impedance (C/W) Diode 2.5 2 1.5 1 0.5 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.05 0 0.00001 Rectangular Pulse Duration in Seconds Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT30DDA60T3G - Rev 1, June , 2006 |
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