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APTGT600DU60
Dual common source Trench + Field Stop IGBT(R) Power Module
C1 Q1 G1 C2 Q2 G2
VCES = 600V IC = 600A* @ Tc = 80C
Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile
E1
E2
E
G1 E1
C1
E
C2
E2 G2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C
Max ratings 600 700 * 600 * 800 20 2300 1200A @ 550V
Unit V A V W
May, 2005 1-5 APTGT600DU60 - Rev 0
Reverse Bias Safe Operating Area
* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature greater than 100C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
APTGT600DU60
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 600A Tj = 150C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Min Typ 1.4 1.5 5.8 Max 750 1.8 6.5 800 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 600A R G = 2 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 600A R G = 2
Min
Typ 49 3.1 1.5 130 55 250 60 145 60 320 80 10.5 21
Max
Unit nF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(A V) VF trr Qrr Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions VR=600V
50% duty cycle
Min 600 Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C
Typ
Max 750 1000
Unit V A A
IF = 600A VGE = 0V IF = 600A VR = 300V
di/dt =5000A/s
600 1.5 1.4 125 220 27 57
1.9
V ns C
APT website - http://www.advancedpower.com
2-5
APTGT600DU60 - Rev 0
May, 2005
APTGT600DU60
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.065 0.11 175 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Package outline (dimensions in mm)
APT website - http://www.advancedpower.com
3-5
APTGT600DU60 - Rev 0
May, 2005
APTGT600DU60
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 1200
T J = 150C
1200 1000
IC (A)
T J=25C T J=125C
1000
VGE =19V T J=150C
VGE=13V VGE=15V VGE =9V
800 600 400 200
800 IC (A) 600 400 200
TJ=25C
0 0 0.5 1 1.5 V CE (V) 2 2.5
0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5
1200 1000 800
Transfert Characteristics
TJ=25C
Energy losses vs Collector Current 40 35 30 E (mJ) 25 20 15 10
VCE = 300V VGE = 15V RG = 2 T J = 150C Eoff
Er
IC (A)
600 400
T J=125C TJ=150C
200 0 5 6 7 8 V GE (V) 9
T J=25C
5 0 11 0 200 400
Eon
10
600 IC (A)
800
1000 1200
Switching Energy Losses vs Gate Resistance 70 60 50 E (mJ) 40 30 20 10 0 0 2 4 6 8 10 Gate Resistance (ohms) 12
Eoff Eon Er VCE = 300V VGE =15V IC = 600A T J = 150C Eon
Reverse Bias Safe Operating Area 1400 1200 1000 IC (A)
Eoff
800 600 400 200 0 0 100 200 300 400 500 600 VCE (V) 700
V GE=15V T J=150C RG=2
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.07 Thermal Impedance (C/W) 0.06 0.05 0.04 0.03 0.02 0.01 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9 0.7
IGBT
0.3
Rectangular Pulse Duration in Seconds
APT website - http://www.advancedpower.com
4-5
APTGT600DU60 - Rev 0
May, 2005
0.5
APTGT600DU60
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80 60 40 20 0 0 200 400 600 IC (A) 800 1000
Hard switching ZVS V CE=300V D=50% RG =2 T J=150C
Forward Characteristic of diode 1200 1000 800 IC (A) 600 400 200 0 0 0.4 0.8 1.2 VF (V) 1.6 2
T J=125C T J=150C TJ =25C
ZCS
T c=85C
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
Diode
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGT600DU60 - Rev 0
May, 2005

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