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APTM20DAM05G
Boost chopper MOSFET Power Module
VBUS CR1
VDSS = 200V RDSon = 5m typ @ Tj = 25C ID = 317A @ Tc = 25C
Application * * * AC and DC motor control Switched Mode Power Supplies Power Factor Correction
OUT Q2
Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
G2
S2
0/VBUS
* * *
VBUS 0/VBUS OUT
Benefits * * * * * Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant
S2 G2
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
Max ratings 200 317 237 1268 30 6 1136 89 50 2500
Unit V A V m W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM20DAM05G - Rev 3
July, 2006
APTM20DAM05G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V T j = 25C
Tj = 125C
Typ
VGS = 10V, ID = 158.5A VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V
5 3
Max 400 2000 6 5 200
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 300A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 300A R G = 1.2 Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 300A, R G = 1.2 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 300A, R G = 1.2
Min
Typ 27.4 8.72 0.38 448 172 188 28 56 81 99 1852 1820 2432 2124
Max
Unit nF
nC
ns
J
J
Chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DCForward Current Diode Forward Voltage
Test Conditions VR=200V Tj = 25C Tj = 125C Tc = 85C
Min 200
Typ
Max 350 1000
Unit V A A
IF = 240A IF = 480A IF = 240A IF = 240A VR = 133V
di/dt = 800A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
240 1.1 1.4 0.9 31 60 240 1000
1.15 V
July, 2006 2-6 APTM20DAM05G - Rev 3
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
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APTM20DAM05G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.11 0.23 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
SP6 Package outline (dimensions in mm)
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3-6
APTM20DAM05G - Rev 3
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
July, 2006
APTM20DAM05G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.12 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 Single Pulse
0 0.00001
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 1000
VGS=15&10V 9V
800 ID, Drain Current (A)
Transfert Characteristics
VDS > ID(on)xR DS(on)MAX 250s pulse test @ < 0.5 duty cycle
I D, Drain Current (A)
800 600 400 200 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS (on) vs Drain Current 1.2 1.15 1.1
VGS=10V
600
7.5V 7V 6.5V 6V 5.5V
400
T J=25C TJ =125C TJ =-55C
200
0 2 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 320 I D, DC Drain Current (A) 280 240 200 160 120 80 40 0 25 50 75 100 125 TC, Case Temperature (C) 150
July, 2006 4-6 APTM20DAM05G - Rev 3
Normalized to V GS=10V @ 158.5A
1.05 1 0.95 0.9 0 100 200 300 I D, Drain Current (A) 400
VGS=20V
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APTM20DAM05G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss ID, Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area ON resistance vs Temperature
VGS=10V ID= 158.5A
10000
1000
limited by RDSon
100s 1ms 10ms
100 Single pulse TJ=150C TC=25C 1
10
DC line
1 10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 12 VDS=40V I D=300A 10 TJ=25C VDS=100V 8 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC)
July, 2006
V DS =160V
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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5-6
APTM20DAM05G - Rev 3
APTM20DAM05G
Delay Times vs Current 90 80 td(on) and td(off) (ns) 70 60 50 40 30 20 10 50 150 250 350 450 550 I D, Drain Current (A) Switching Energy vs Current
VDS=133V RG=1.2 TJ=125C L=100H
Rise and Fall times vs Current
160 140
td(off) t r and tf (ns)
120 100 80 60 40 20 0 50
V DS=133V RG=1.2 T J=125C L=100H
tf
tr
td(on)
150
250
350
450
550
ID, Drain Current (A) Switching Energy vs Gate Resistance 6 Switching Energy (mJ)
5 4 3 2 1 0 50 150 250 350 450 550
ID, Drain Current (A) Operating Frequency vs Drain Current
VDS=133V RG=1.2 T J=125C L=100H
Eon Eoff
5.5 5 4.5 4 3.5 3 2.5 2 0
Eon and Eoff (mJ)
V DS=133V ID=300A T J=125C L=100H
Eoff Eon
Eoff 2.5 5 7.5 10 12.5 15
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
300
Frequency (kHz)
I DR, Reverse Drain Current (A)
350
TJ=150C 100
250 200 150 100 50 0 30
ZVS V DS=133V D=50% R G=1.2 T J=125C T C=75C ZCS
10
TJ =25C
Hard Switching
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V)
July, 2006
70
110 150 190 230 270 I D, Drain Current (A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6-6
APTM20DAM05G - Rev 3

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