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| D G S TO-247 ARF446 ARF447 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 140W 65MHz The ARF446 and ARF447 comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. Specified 250 Volt, 40.68 MHz Characteristics: Low Cost Common Source RF Package. Very High Breakdown for Improved Ruggedness. Low Thermal Resistance. Nitride Passivated Die for Improved Reliability. Output Power = 140 Watts. Gain = 15dB (Class C) Efficiency = 75% MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RqJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Power Dissipation @ TC = 25C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. All Ratings: TC = 25C unless otherwise specified. ARF446/447 UNIT Volts Amps Volts Watts C/W C 900 900 6.5 30 230 0.55 -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 mA) 1 MIN TYP MAX UNIT Volts 900 7 25 250 100 4 2 5.7 5 VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH) (ID(ON) = 3.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 3.5A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) mA nA mhos 7-2003 050-4907 Rev D Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V MIN TYP ARF446/447 MAX UNIT 1500 70 27 7 5 23 12 1800 130 50 15 10 40 25 ns pF VDS = 300V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6W FUNCTIONAL CHARACTERISTICS Symbol GPS h y GPS h y Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 20:1 Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 20:1 Test Conditions f = 27.12 MHz VGS = 0V VDD = 300V Pout = 140W f = 40.68 MHz VGS = 0V VDD = 250V Pout = 140W MIN TYP MAX UNIT dB % 20 80 No Degradation in Output Power 13 70 15 75 dB % No Degradation in Output Power 1 Pulse Test: Pulse width < 380 m Duty Cycle < 2% S, APT Reserves the right to change, without notice, the specifications and information contained herein. 30 25 20 GAIN (dB) 15 10 5 0 10 10 Class C VDD = 250V 3000 Ciss 1000 CAPACITANCE (pf) 500 Coss 100 50 Crss Pout = 250W 30 40 50 60 65 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency TJ = -55C ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250mSEC. PULSE TEST @ <0.5 % DUTY CYCLE 20 1 5 10 50 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 30 OPERATION HERE LIMITED BY RDS (ON) 16 ID, DRAIN CURRENT (AMPERES) 10mS 100mS 12 10 5 1mS 8 7-2003 1 .5 TC =+25C TJ =+150C SINGLE PULSE .1 1 5 10 50 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area 10mS 100mS DC 4 050-4907 Rev D TJ = +125C TJ = -55C TJ = +25C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics 1.2 VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.1 1.0 0.9 0.8 0.7 ARF446/447 ID, DRAIN CURRENT (AMPERES) 16 VGS=6.5, 8, 10 & 15V 6V 12 8 5.5V 4 5V 4.5V 1 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 5, Typical Threshold Voltage vs Temperature GPS, COMMON SOURCE AMPLIFIER GAIN (dB) 300 250 200 150 100 50 0 Class C VDD = 250V 0 18 Class C VDD = 250V POUT, POWER OUT (WATTS) f = 40.68 MHz 16 f = 40.68 MHz 14 12 10 0 4 6 8 10 PIN, POWER IN (WATTS) Figure 7, Typical Power Out vs Power In 2 50 100 150 200 250 300 POUT, POWER OUT (WATTS) Figure 8, Typical Common Source Amplifier Gain vs Power Out 8 0 0.6 D=0.5 , THERMAL IMPEDANCE (C/W) 0.2 0.1 0.05 0.05 0.02 0.01 0.005 0.01 SINGLE PULSE Note: PDM t1 t2 Peak TJ = PDM x ZqJC + TC Duty Factor D = t1/t2 0.1 Z 0.001 10-5 qJC 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10-4 10 Table 1 - Typical Class C Large Signal Input-Output Impedance Freq. (MHz) 2.0 13.5 27.0 40.0 65.0 Z in (W) 20.40 - j 9.6 2.10 - j 6.4 0.50 - j 2.3 0.30 - j 0.4 0.46 + j 2.0 Z OL (W) 142.0 - j 20 73.0 - j 71 30.0 - j 57 15.0 - j 42 6.2 - j 25 7-2003 050-4907 Rev D Z in - gate shunted by 25W Z OL - conjugate of optimum load impedance for 250W at 250V ARF446/447 40.68 MHz Test Circuit Parts List C1-C3 -- Arco 465 or equivalent C4-C6 -- 1nF 500V COG chip L1 -- 2t #18 AWG .25" ID L2 -- 3t #18 AWG .25" ID L3 -- 8t #18 AWG .25" ID L4 -- VK200-4B ferrite choke 3mH R1 -- 25 Ohm 1/2W Carbon T1 -- 4:1 Broadband Transformer L4 + C4 L3 L2 C6 C3 RF Output C5 250V RF Input L1 T1 C1 R1 DUT C2 40.68 MHz Test Circuit TO-247 Package Outline Top View 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC Dimensions in Millimeters and (Inches) NOTE: The ARF446 and ARF447 comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. Source 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Device ARF446 ARF447 Gate Drain Source Source Drain Gate 050-4907 Rev D 7-2003 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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