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| SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 SEPTEMBER 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE PARTMARKING DETAILS BCV26 - BCV27 BCV46 - BCV47 BCV26 - ZFD BCV46 - ZFE SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg BCV46 MIN. MAX. -80 -60 -10 -100 -10 IEBO VCE(sat) VBE(sat) -100 -1.0 -1.5 4K 10K 20K 4K 200 Typical 4.5 Typical -100 -10 -100 -1.0 -1.5 2K 4K 10K 2K 200 Typical 4.5 Typical BCV26 -40 -30 -10 -800 -500 -100 330 -55 to +150 UNIT V V V nA nA A A BCV26 BCV46 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER SYMBOL BCV46 -80 -60 UNIT V V V mA mA mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current V(BR)CBO V(BR)CEO V(BR)EBO ICBO BCV26 MIN. MAX. -40 -30 -10 CONDITIONS. IC=100A IC=10mA * IE=10A VCB = -30V VCB = -60V VCB=-30V,Tamb =150oC VCB=-60V,Tamb =150oC VEB=-4V IC=-100mA,IB=-0.1mA* IC=-100mA,IB=-0.1mA* IC=-100, VCE=-1V IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-500mA, VCE=-5V* IC=-50mA, VCE=-5V f = 20MHz VCB=-10V, f=1MHz Emitter Base Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage nA V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo MHz pF *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for these devices Periodic Sample Test Only. 3 - 21 |
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