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| LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR BCW61BLT1 BCW61CLT1 BCW61DLT1 3 1 BASE 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V CBO V EBO Value - 32 - 32 - 5.0 - 100 Unit Vdc Vdc Vdc mAdc CASE 318-08, STYLE 6 SOT-23 (TO-236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ , Tstg 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C DEVICE MARKING BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0 ) Emitter-Base Breakdown Voltage (I E= -1.0 Adc, I C = 0) Collector Cutoff Current (VCE = -32 Vdc, ) (VCE = -32 Vdc, TA = 150C) 1. FR- 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)EBO V (BR)CEO - 32 -- Vdc - 5.0 -- Vdc I CES -- -- -20 -20 nAdc Adc M10-1/6 LESHAN RADIO COMPANY, LTD. BCW61BLT1 BCW61CLT1 BCW61DLT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE BCW61B BCW61C BCW61D hFE BCW61B BCW61C BCW61D ( IC= - 50 mAdc, VCE = - 1.0 Vdc ) BCW61B BCW61C BCW61D AC Current Gain ( VCE = - 5.0Vdc, IC= - 2.0 mAdc, f= 1.0 kHz ) Collector-Emitter Saturation Voltage ( IC = - 50 mAdc, IB = - 1.25 mAdc ) ( IC = - 10 mAdc, IB = - 0.25 mAdc ) Base-Emitter Saturation Voltage ( IC = - 50 mAdc, IB = - 1.25 mAdc ) ( IC = - 10 mAdc, IB = - 0.25 mAdc ) Base-Emitter On Voltage ( IC = - 2.0 mAdc, VCE = - 5.0 Vdc ) hFE BCW61B BCW61C BCW61D V CE(sat) -- -- V BE(sat) - 0.68 -0.6 V BE(on) - 0.6 - 0.75 - 1.05 - 0.85 Vdc - 0.55 - 0.25 Vdc 175 250 350 350 500 700 Vdc hFE 80 100 100 -- -- -- -- 140 250 380 310 460 630 -- 30 40 100 -- -- -- -- Min Max Unit -- ON CHARACTERISTICS DC Current Gain ( IC= - 10 Adc, VCE = - 5.0 Vdc ) ( IC= - 2.0 mAdc, VCE = - 5.0 Vdc ) SMSMALL-SIGNAL CHARACTERISTICS Output Capacitance C obo (V CE = - 10 Vdc, I C = 0, f = 1.0 MHz) Noise Figure NF (V CE = - 5.0 Vdc, I C = - 0.2 mAdc, R S = 2.0 k, f = 1.0 kHz, BW = 200 Hz) -- -- 6.0 6.0 pF dB SWITCHING CHARACTERISTICS Turn-On Time t on (I C = - 10 mAdc, I B1 = - 1.0 mAdc) Turn-Off Time t off (I B2 =- 1.0 mAdc, V BB = - 3.6 Vdc, R 1 = R 2 = 5.0 k, R L = 990 ) -- -- 150 800 ns ns M10-2/6 LESHAN RADIO COMPANY, LTD. BCW61BLT1 BCW61CLT1 BCW61DLT1 TYPICAL NOISE CHARACTERISTICS (V CE = -5.0 Vdc, T A = 25C) 10 1.0 BANDWIDTH = 1.0 Hz ~ R ~0 7.0 5.0 BANDWIDTH = 1.0 Hz ~ RS~ e n , NOISE VOLTAGE (nV) I n , NOISE CURRENT (pA) 7.0 S IC=10 A 30A 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 IC=1.0mA 300A 100A 30A 10A 10 20 50 100 200 500 1.0k 2.0k 5.0k 10 k 5.0 3.0 1.0mA 2.0 100A 300A 1.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10 k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 1. Noise Voltage Figure 2. Noise Current NOISE FIGURE CONTOURS (V CE = -5.0 Vdc, T A = 25C) 1.0M 1.0M R S , SOURCE RESISTANCE ( ) R S , SOURCE RESISTANCE ( ) 500k 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 10 20 30 50 70 100 BANDWIDTH = 1.0 Hz 500k 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 10 20 30 50 70 100 BANDWIDTH = 1.0 Hz 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0dB 200 300 500 700 1.0K 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0K I C , COLLECTOR CURRENT (A) I C , COLLECTOR CURRENT (A) Figure 3. Narrow Band, 100 Hz 1.0M Figure 4. Narrow Band, 1.0 kHz R S , SOURCE RESISTANCE ( ) 500k 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 10 20 30 50 70 100 200 10 Hz to 15.7KHz Noise Figure is Defined as: NF = 20 log 10 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 300 500 700 1.0K ( ---------------) 4KTR S e n 2 +4KTRS +I n2 R S2 1/ 2 e n = Noise Voltage of the Transistor referred to the input. (Figure 3) I n = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10 -23 j/K) T = Temperature of the Source Resistance (K) R s = Source Resistance ( ) I C , COLLECTOR CURRENT (A) Figure 5. Wideband 8 M10-3/6 LESHAN RADIO COMPANY, LTD. BCW61BLT1 BCW61CLT1 BCW61DLT1 TYPICAL STATIC CHARACTERISTICS V CE , COLLECTOR- EMITTER VOLTAGE (VOLTS) 0.8 T A= 25C BCW61 I C= 1.0 mA 10 mA 50 mA 100 mA I C , COLLECTOR CURRENT (mA) 1.0 100 80 T A = 25C PULSE WIDTH =300 s DUTY CYCLE<2.0% 300A I B= 400 A 350A 250A 200A 150A 0.6 60 0.4 40 100A 50 A 0.2 20 0 0.002 0.0050.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 0 5.0 10 15 20 25 30 35 40 I B , BASE CURRENT (mA) V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Collector Saturation Region V , TEMPERATURE COEFFICIENTS (mV/C) 1.4 1.6 Figure 7. Collector Characteristics T J = 25C 1.2 *APPLIES for I C / I B< h FE / 2 0.8 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 VC for V CE(sat) 0 25C to 125C -55C to 25C V BE(sat) @ I C /I B = 10 V BE(on)@ V CE= 1.0 V -0.8 25C to 125C -1.6 V CE(sat) @ I C /I B = 10 VB for V BE -55C to 25C -2.4 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 8. "On" Voltages Figure 9. Temperature Coefficients M10-4/6 LESHAN RADIO COMPANY, LTD. BCW61BLT1 BCW61CLT1 BCW61DLT1 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 1000 V CC= 3.0 V IC /I B= 10 T J= 25C 700 500 300 200 100 ts VCC= -3.0 V IC /I B= 10 IB1=IB2 T J= 25C t, TIME (ns) 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 70 50 30 20 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 tf td @ V BE(off)= 0.5 V tf I C , COLLECTOR CURRENT (mA) f T, CURRENT- GAIN -- BANDWIDTH PRODUCT (MHz) I C , COLLECTOR CURRENT (mA) Figure 10. Turn-On Time 500 10.0 Figure 11. Turn-Off Time T J = 25C 300 T J= 25C V CE=20 V 5.0 V C, CAPACITANCE (pF) 7.0 C ib 5.0 200 3.0 100 2.0 C ob 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 I C , COLLECTOR CURRENT (mA) V R , REVERSE VOLTAGE (VOLTS) Figure 12. Current-Gain -- Bandwidth Product r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED) 1.0 0.7 0.5 0.3 0.2 Figure 13. Capacitance D = 0.5 0.2 0.1 FIGURE 19A 0.05 P(pk) 0.02 0.01 t SINGLE PULSE 1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 DUTY CYCLE, D = t 1 / t 2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 (SEE AN-569) t 2 Z JA(t) = r(t) * RJA T J(pk) - T A = P (pk) Z JA(t) 1.0k 2.0k 5.0k 10k 20k 50k 100k 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 t, TIME (ms) Figure 14. Thermal Response M10-5/6 LESHAN RADIO COMPANY, LTD. BCW61BLT1 BCW61CLT1 BCW61DLT1 104 V CC = 30 V 103 DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 15. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles. To find Z JA(t) , multiply the value obtained from Figure 14 by the steady state value R JA . Example: The MPS3905 is dissipating 2.0 watts peak under the following conditions: t 1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2) Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P (pk) x R JA = 0.22 x 2.0 x 200 = 88C. For more information, see AN-569. I C , COLLECTOR CURRENT (nA) I CEO 102 101 I CBO AND I CEX @ V BE(off) = 3.0 V 100 10-1 10-2 -4 -2 0 +20 +40 +60 +80 +100 +120 +140 +160 T J , JUNCTION TEMPERATURE (C) Figure 15. Typical Collector Leakage Current M10-6/6 |
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