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| BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D 150 W at 25C Case Temperature 15 A Continuous Collector Current C B SOT-93 PACKAGE (TOP VIEW) 1 2 Minimum hFE of 750 at 3V, 6 A E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BDW83 BDW83A Collector-base voltage (IE = 0) BDW83B BDW83C BDW83D BDW83 BDW83A Collector-emitter voltage (IB = 0) (see Note 1) BDW83B BDW83C BDW83D Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. VEBO IC IB Ptot Ptot 1/2LIC2 Tj Tstg TA VCEO V CBO SYMBOL VALUE 45 60 80 100 120 45 60 80 100 120 5 15 0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ C C C V V UNIT These values apply when the base-emitter diode is open circuited. Derate linearly to 150C case temperature at the rate of 1.2 W/C. Derate linearly to 150C free air temperature at the rate of 28 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS BDW83 V(BR)CEO Collector-emitter breakdown voltage BDW83A IC = 30 mA IB = 0 (see Note 5) BDW83B BDW83C BDW83D VCE = 30 V ICEO Collector-emitter cut-off current VCE = 30 V VCE = 40 V VCE = 50 V VCE = 60 V VCB = 45 V VCB = 60 V VCB = 80 V VCB = 100 V ICBO Collector cut-off current VCB = 120 V VCB = 45 V VCB = 60 V VCB = 80 V VCB = 100 V VCB = 120 V IEBO hFE VBE(on) VCE(sat) VEC Emitter cut-off current Forward current transfer ratio Base-emitter voltage Collector-emitter saturation voltage Parallel diode forward voltage VEB = VCE = VCE = VCE = IB = 5V 3V 3V 3V 12 mA IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = 6 A IC = 15 A IC = 6 A IC = 6 A IC = 15 A IB = 0 (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) 750 100 2.5 2.5 4 3.5 V V V TC = 150C TC = 150C TC = 150C TC = 150C TC = 150C BDW83 BDW83A BDW83B BDW83C BDW83D BDW83 BDW83A BDW83B BDW83C BDW83D BDW83 BDW83A BDW83B BDW83C BDW83D MIN 45 60 80 100 120 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 5 5 5 5 5 2 20000 mA mA mA V TYP MAX UNIT IB = 150 mA IE = 15 A NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 0.83 35.7 UNIT C/W C/W resistive-load-switching characteristics at 25C case temperature PARAMETER ton toff TEST CONDITIONS IC = 10 A VBE(off) = -4.2 V IB(on) = 40 mA RL = 3 MIN IB(off) = -40 mA tp = 20 s, dc 2% TYP 0.9 7 MAX UNIT s s Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V 70000 TCS140AG COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 2*0 tp = 300 s, duty cycle < 2% IB = I C / 100 1*5 TCS140AH hFE - Typical DC Current Gain TC = -40C TC = 25C TC = 100C 10000 1*0 1000 0*5 TC = -40C TC = 25C TC = 100C 0 0*5 1*0 IC - Collector Current - A 10 20 VCE = 3 V tp = 300 s, duty cycle < 2% 100 0*5 1*0 IC - Collector Current - A 10 20 Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C 2*5 TC = 100C TCS140AI 2*0 1*5 1*0 0*5 IB = IC / 100 tp = 300 s, duty cycle < 2% 1*0 IC - Collector Current - A 10 20 0 0*5 Figure 3. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 100 SAS140AB IC - Collector Current - A 10 1*0 BDW83 BDW83A BDW83B BDW83C BDW83D 0*1 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 160 Ptot - Maximum Power Dissipation - W 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - C TIS140AB Figure 5. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 o 4,1 4,0 15,2 14,7 1,37 1,17 3,95 4,15 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 1,30 1,10 2 3 0,78 0,50 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW 5 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP |
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