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| DISCRETE SEMICONDUCTORS DATA SHEET BF547W NPN 1 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 June 1994 Philips Semiconductors Philips Semiconductors Product specification NPN 1 GHz wideband transistor FEATURES * Stable oscillator operation * High current gain * Good thermal stability. APPLICATIONS It is primarily intended as a mixer, oscillator and IF amplifier in UHF and VHF tuners. DESCRIPTION Silicon NPN transistor in a plastic SOT323 (S-mini) package. The BF547W uses the same crystal as the SOT23 version, BF547. PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, 2 columns BF547W 3 1 Top view Marking code: E2. 2 MBC870 Fig.1 SOT323 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 63 C; note 1 IC = 2 mA; VCE = 10 V IC = 0; VCB = 10 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 500 MHz IC = 1 mA; VCE = 10 V; f = 100 MHz; Tamb = 25 C CONDITIONS open emitter open base - - - - 40 - 0.8 - MIN. - - - - 95 1 1.2 20 TYP. MAX. 30 20 50 300 250 - 1.6 - pF GHz dB UNIT V V mA mW LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature up to Ts = 63 C; note 1 CONDITIONS open emitter open base open collector - - - - - -65 - MIN. 30 20 3 50 300 +150 +150 MAX. V V V mA mW C C UNIT Note to the "Quick reference data" and "Limiting values" 1. Ts is the temperature at the soldering point of the collector pin. June 1994 2 Philips Semiconductors Product specification NPN 1 GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 C (unless otherwise specified). SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE Cre fT GUM Note PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current DC current gain feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS IC = 0.01 mA; IE = 0 IC = 10 mA; IB = 0 IE = 0.01 mA; IC = 0 IE = 0; VCB = 10 V IC = 2 mA; VCE = 10 V IC = 0; VCB = 10 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 500 MHz IC = 1 mA; VCE = 10 V; f = 100 MHz; Tamb = 25 C; - - - - 40 - 0.8 - MIN. - - - - 95 1 1.2 20 TYP. PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 63 C; note 1 BF547W VALUE 290 UNIT K/W MAX. 30 20 3 100 250 - 1.6 - V V V UNIT nA pF GHz dB s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero.G UM = 10 log ------------------------------------------------------------ dB. ( 1 - s 11 2 ) ( 1 - s 22 2 ) June 1994 3 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547W handbook, halfpage 400 MLB587 MBB397 handbook, halfpage 140 P tot (mW) 300 h FE 100 200 60 100 0 0 50 100 150 Ts 200 ( o C) 20 10 1 1 10 2 I C (mA) 10 VCE = 10 V; Tj = 25 C. Fig.3 Fig.2 Power derating curve. DC current gain as a function of collector current; typical values. handbook, halfpage 2 MLB588 MLB589 C re (pF) 1.6 handbook, halfpage 1.4 fT (GHz) 1 1.2 0.8 0.6 0.4 0 0 4 8 12 16 20 VCB (V) 0.2 10 1 1 10 I C (mA) 10 2 IC = 0; f = 1 MHz. VCE = 10 V; f = 500 MHz. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. Fig.5 Transition frequency as a function of collector current; typical values. June 1994 4 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547W handbook, halfpage 30 MLB590 handbook, halfpage 50 MLB591 gain (dB) 20 gain (dB) 40 30 20 10 10 0 0 5 10 15 I C (mA) 20 0 10 10 2 10 3 f (MHz) 10 4 VCE = 10 V; f = 100 MHz. VCE = 10 V; IC = 15 mA. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of frequency; typical values. handbook, halfpage 1 MLB592 VCE(sat) (V) handbook, halfpage 6 MLB593 0.8 F (dB) 4 0.6 0.4 2 0.2 0 0 2 4 6 8 10 I C (mA) 0 10 1 1 I C (mA) 10 IC/IB = 10. VCE = 10 V; ZS = ZL = 50 ; f = 100 MHz. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.9 Minimum noise figure as a function of collector current; typical values. June 1994 5 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547W 90 o handbook, full pagewidth 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 2 5 0o 0 0.2 2 GHz 1 5 180 o 0 0.2 0.5 0.2 40 MHz 5 0.5 135 o 1 2 45 o MLB594 1.0 90 o VCE = 10 V; IC = 15 mA; Zo = 50 . Fig.10 Common emitter input reflection coefficient (s11); typical values. handbook, full pagewidth 90 o 135 o 45 o 40 MHz 180 o 2 GHz 25 20 15 10 5 0o 135 o 45 o 90 o VCE = 10 V; IC = 15 mA. MLB595 Fig.11 Common emitter forward transmission coefficient (s21); typical values. June 1994 6 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547W 90 o handbook, full pagewidth 135 o 45 o 2 GHz 180 o 0.5 0.4 0.3 0.2 0.1 40 MHz 0o 135 o 45 o 90 o VCE = 10 V; IC = 15 mA. MLB596 Fig.12 Common emitter reverse transmission coefficient (s12); typical values. 90 o handbook, full pagewidth 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 40 MHz 0o 0 0.2 5 0.2 5 2 GHz 0.5 135 o 1 MLB597 2 45 o 1.0 90 o VCE = 10 V; IC = 15 mA; Zo = 50 . Fig.13 Common emitter output reflection coefficient (s22); typical values. June 1994 7 Philips Semiconductors Product specification NPN 1 GHz wideband transistor SPICE parameters for the BF547W crystal SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VALUE 289.1 94.29 0.989 90.00 158.6 426.6 1.491 12.32 0.989 19.39 24.75 249.7 1.200 50.00 1.000 50.00 0.500 1.309 0.000 1.110 3.000 1.071 727.3 0.332 92.98 43.89 1.813 143.9 0.000 1.167 489.0 0.253 0.150 50.00 0.000 UNIT aA - - V mA aA - - - V mA pA - A - eV - pF mV - ps - V mA deg pF mV - - ns F Cbe Ccb Cce L1 L2 L3 LB LE List of components (see Fig.14). DESIGNATION 2 100 100 0.34 0.10 0.34 0.60 0.60 VALUE QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc); fc = scaling frequency = 100 MHz. E L3 B L1 LB B' E' LE C' handbook, halfpage BF547W SEQUENCE No. 36(1) 37(1) 38 Note PARAMETER VJS MJS FC VALUE 750.0 0.000 0.950 UNIT mV - - 1. These parameters have not been extracted, the default values are shown. C cb L2 C C be Cce MBC964 Fig.14 Package equivalent circuit SOT323. UNIT fF fF fF nH nH nH nH nH June 1994 8 Philips Semiconductors Product specification NPN 1 GHz wideband transistor PACKAGE OUTLINE BF547W 0.2 1.00 max 0.1 max 0.25 0.10 0.3 0.1 A 1.35 1.15 B 2 3 0.4 0.2 0.2 M B 1 1.4 1.2 2.2 1.8 0.2 M A 2.2 2.0 MBC871 Dimensions in mm. Fig.15 SOT323. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. June 1994 9 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Philips Semiconductors Product specification NPN 1 GHz wideband transistor NOTES BF547W June 1994 10 Philips Semiconductors Product specification NPN 1 GHz wideband transistor NOTES BF547W June 1994 11 Philips Semiconductors - a worldwide company Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428) BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367 Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02)805 4455, Fax. (02)805 4466 Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213, Tel. (01)60 101-1236, Fax. (01)60 101-1211 Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands, Tel. (31)40 783 749, Fax. (31)40 788 399 Brazil: Rua do Rocio 220 - 5th floor, Suite 51, CEP: 04552-903-SAO PAULO-SP, Brazil. P.O. Box 7383 (01064-970). Tel. (011)821-2327, Fax. (011)829-1849 Canada: INTEGRATED CIRCUITS: Tel. (800)234-7381, Fax. (708)296-8556 DISCRETE SEMICONDUCTORS: 601 Milner Ave, SCARBOROUGH, ONTARIO, M1B 1M8, Tel. (0416)292 5161 ext. 2336, Fax. (0416)292 4477 Chile: Av. Santa Maria 0760, SANTIAGO, Tel. (02)773 816, Fax. (02)777 6730 Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17, 77621 BOGOTA, Tel. (571)249 7624/(571)217 4609, Fax. (571)217 4549 Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. (032)88 2636, Fax. (031)57 1949 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. (9)0-50261, Fax. (9)0-520971 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. (01)4099 6161, Fax. (01)4099 6427 Germany: PHILIPS COMPONENTS UB der Philips G.m.b.H., P.O. Box 10 63 23, 20043 HAMBURG, Tel. (040)3296-0, Fax. (040)3296 213. Greece: No. 15, 25th March Street, GR 17778 TAVROS, Tel. (01)4894 339/4894 911, Fax. (01)4814 240 Hong Kong: PHILIPS HONG KONG Ltd., Components Div., 6/F Philips Ind. Bldg., 24-28 Kung Yip St., KWAI CHUNG, N.T., Tel. (852)424 5121, Fax. (852)428 6729 India: Philips INDIA Ltd, Components Dept, Shivsagar Estate, A Block , Dr. Annie Besant Rd. Worli, Bombay 400 018 Tel. (022)4938 541, Fax. (022)4938 722 Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4, P.O. Box 4252, JAKARTA 12950, Tel. (021)5201 122, Fax. (021)5205 189 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. (01)640 000, Fax. (01)640 200 Italy: PHILIPS COMPONENTS S.r.l., Viale F. Testi, 327, 20162 MILANO, Tel. (02)6752.3302, Fax. (02)6752 3300. Japan: Philips Bldg 13-37, Kohnan 2 -chome, Minato-ku, TOKYO 108, Tel. (03)3740 5028, Fax. (03)3740 0580 Korea: (Republic of) Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. (02)794-5011, Fax. (02)798-8022 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. (03)750 5214, Fax. (03)757 4880 Mexico: Philips Components, 5900 Gateway East, Suite 200, EL PASO, TX 79905, Tel. 9-5(800)234-7381, Fax. (708)296-8556 Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB Tel. (040)783749, Fax. (040)788399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. (09)849-4160, Fax. (09)849-7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. (022)74 8000, Fax. (022)74 8341 Pakistan: Philips Electrical Industries of Pakistan Ltd., Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton, KARACHI 75600, Tel. (021)587 4641-49, Fax. (021)577035/5874546. Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc, 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. (02)810 0161, Fax. (02)817 3474 Portugal: PHILIPS PORTUGUESA, S.A., Rua dr. Antonio Loureiro Borges 5, Arquiparque - Miraflores, Apartado 300, 2795 LINDA-A-VELHA, Tel. (01)14163160/4163333, Fax. (01)14163174/4163366. Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. (65)350 2000, Fax. (65)251 6500 South Africa: S.A. PHILIPS Pty Ltd., Components Division, 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. (011)470-5911, Fax. (011)470-5494. Spain: Balmes 22, 08007 BARCELONA, Tel. (03)301 6312, Fax. (03)301 42 43 Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM, Tel. (0)8-632 2000, Fax. (0)8-632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. (01)488 2211, Fax. (01)481 77 30 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978, TAIPEI 100, Tel. (02)388 7666, Fax. (02)382 4382. Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, Bangkok 10260, THAILAND, Tel. (662)398-0141, Fax. (662)398-3319. Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. (0 212)279 2770, Fax. (0212)269 3094 United Kingdom: Philips Semiconductors Limited, P.O. Box 65, Philips House, Torrington Place, LONDON, WC1E 7HD, Tel. (071)436 41 44, Fax. (071)323 03 42 United States: INTEGRATED CIRCUITS: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. (800)234-7381, Fax. (708)296-8556 DISCRETE SEMICONDUCTORS: 2001 West Blue Heron Blvd., P.O. Box 10330, RIVIERA BEACH, FLORIDA 33404, Tel. (800)447-3762 and (407)881-3200, Fax. (407)881-3300 Uruguay: Coronel Mora 433, MONTEVIDEO, Tel. (02)70-4044, Fax. (02)92 0601 For all other countries apply to: Philips Semiconductors, International Marketing and Sales, Building BAF-1, P.O. Box 218, 5600 MD, EINDHOVEN, The Netherlands, Telex 35000 phtcnl, Fax. +31-40-724825 SCD31 (c) Philips Electronics N.V. 1994 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 123065/1500/02/pp12 Document order number: Date of release: June 1994 9397 733 10011 Philips Semiconductors |
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