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BFP183W
NPN Silicon RF Transistor
3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz

4
2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP183W
Maximum Ratings Parameter
Marking RHs 1=E
Pin Configuration 2=C 3=E 4=B
Package SOT343
Unit V
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 12 20 20 2 65 5 450 150 -65 ... 150 -65 ... 150
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Ambient temperature Storage temperature TS 58 C 1)
mA mW C
Thermal Resistance Junction - soldering point 2) RthJS
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA
205
K/W
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Aug-10-2001
BFP183W
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V hFE 50 100 200 IEBO 1 A ICBO 100 nA ICES 100 A V(BR)CEO 12 V Symbol min. Values typ. max. Unit
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Aug-10-2001
BFP183W
Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (verified by random sampling) Transition frequency IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Transducer gain IC = 15 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz
1G ms 2G ma
Unit max. 0.6 dB GHz pF
typ. 8 0.4 0.27 1
fT Ccb Cce Ceb F
6 -
Gms -
1.2 2 21.5
-
Gma
-
14.5
-
|S21e|2 17 11 -
= |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2)
3
Aug-10-2001
BFP183W
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 1.0345 14.772 1.2149 3.4276 0.85331 1.0112 23.077 22.746 1.8773 1.1967 1.0553 0 3 fA V V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 115.98 0.14562 10.016 0.013483 2.5426 1.3435 1.0792 0.36823 0 0.3 0 0 0.54852 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.80799 16.818 0.99543 1.3559 0.43801 0.20486 0.45354 0.50905 460.11 0.053823 0.75 1.11 300 fA fA mA -
fF ps mA V ns
V deg fF -
V fF V eV K
-
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE =
0.43 0.47 0.26 0.12 0.06 0.36 68 46 232
fF fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
4
Aug-10-2001
nH nH nH nH nH nH fF
BFP183W
Total power dissipation Ptot = f (TS )
500
mW
400 350 300 250 200 150 100 50 0 0 120 C
P tot
20
40
60
80
100
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load Ptotmax/P totDC = f (tp)
10 3
10 2
K/W
Ptotmax / PtotDC
-
10 2
10 1
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
5
Aug-10-2001
BFP183W
Collector-base capacitance Ccb = f (VCB ) f = 1MHz
Transition frequency f T = f (I C)
V CE = Parameter
0.70
pF
10.0
MHz 10V
0.60 0.55 0.50 8.0 7.0
8V 5V
Ccb
fT
0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 4 8 12 16
V
6.0 5.0 4.0 3.0 2.0 1.0 0.0 0
3V
2V
1V 0.7V
24
5
10
15
20
25
30
35 mA
45
VCB
IC
Power Gain Gma , Gms = f(IC )
f = 0.9GHz VCE = Parameter
24
dB 10V
Power Gain Gma, Gms = f(I C)
f = 1.8GHz VCE = Parameter
18
dB 10V 3V 3V
20
5V
14 12
G
2V
G
18
2V
10 8
16
14 6 12
1V
1V
4 2 0 0
0.7V
10
0.7V
8 0
5
10
15
20
25
30
35 mA
45
5
10
15
20
25
30
35 mA
45
IC
IC
6
Aug-10-2001
BFP183W
Power Gain Gma , Gms = f(VCE):_____
|S21|2 = f(VCE):--------f = Parameter
24
dB
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50) VCE = Parameter, f = 900MHz
28
8V
IC=15mA
0.9GHz
dBm
20 18 16
0.9GHz
24
5V
22
1.8GHz
G
IP 3
14 12 10 8 6
1.8GHz
20
3V
18 16 14 12
2V
4 2 0 0 2 4 6 8
V
10 8 0
1V
12
4
8
12
16
20
24
28
32 mA 38
VCE
IC
Power Gain Gma , Gms = f(f)
VCE = Parameter
35
Power Gain |S21|2= f(f)
V CE = Parameter
35
IC=15mA
dB dB
IC =15mA
25
25
G
20
S21
20 15
10V
15
10
2V 1V 0.7V
10
10V 2V 1V 0.7V
5
5
0 0.0
0.5
1.0
1.5
2.0
2.5
GHz
3.5
0 0.0
0.5
1.0
1.5
2.0
2.5
GHz
3.5
f
f
7
Aug-10-2001

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