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| Rev. 1.0 BSS87 SIPMOS O Small-Signal-Transistor Feature * N-Channel * Enhancement mode * Logic Level * dv/dt rated Product Summary VDS RDS(on) ID 240 6 0.26 P-SOT89-4-1 1 2 3 V W A 2 VPS05558 Type BSS87 Package P-SOT89-4-2 Ordering Code Q67000-S506 Tape and Reel Information E6327: 3000 pcs/reel Marking KA Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current TA=25C TA=70C Value 0.26 0.21 Unit A ID Pulsed drain current TA=25C ID puls dv/dt VGS Ptot Tj , Tstg 1.04 6 20 Class 1 1 -55... +150 55/150/56 W C kV/s V Reverse diode dv/dt IS=0.26A, V DS=192V, di/dt=200A/s, Tjmax=150C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation, related to min. footprint TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-11-14 Rev. 1.0 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case (Pin 2) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) BSS87 Symbol min. RthJC RthJA 125 70 Values typ. max. 10 K/W Unit Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0, ID=250A Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 240 0.8 Values typ. 1.2 max. 1.8 Unit V Gate threshold voltage, VGS = VDS ID=108A Zero gate voltage drain current V DS=240V, VGS=0, Tj=25C V DS=240V, VGS=0, Tj=150C A 4.6 3.9 0.1 100 10 7.5 6 nA W Gate-source leakage current V GS=20V, VDS=0 Drain-source on-state resistance V GS=4.5V, ID=0.24A Drain-source on-state resistance V GS=10V, ID=0.26A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-11-14 Rev. 1.0 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr V GS=0, IF = I S V R=120V, IF=lS, diF/dt=100A/s BSS87 Values min. typ. 0.33 77.5 11.2 5.8 3.7 3.5 17.6 27.3 max. 97 14 7.3 5.5 5.2 26.4 41 ns S pF Unit Symbol Conditions g fs Ciss Coss Crss td(on) tr td(off) tf Q gs Q gd Qg V DS2*I D*RDS(on)max, ID=0.21A V GS=0, VDS=25V, f=1MHz 0.16 - V DD=120V, V GS=10V, ID=0.28A, R G=6W V DD=192V, ID=0.26A - 0.14 1.7 3.7 2.7 0.21 2.5 5.5 - nC V DD=192V, ID=0.26A, V GS=0 to 10V V(plateau) V DD=192V, ID = 0.26 A IS V TA=25C - 0.82 53.6 101 0.26 1.04 1.2 80.4 152 A V ns nC Page 3 2002-11-14 Rev. 1.0 1 Power dissipation Ptot = f (TA) 1.1 BSS87 BSS87 2 Drain current ID = f (TA) parameter: V GS 10 V 0.28 BSS87 W 0.9 0.8 A 0.24 0.22 0.2 Ptot ID C 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 160 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 20 40 60 80 100 120 C 160 TA TA 3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TA = 25 C 10 1 BSS87 4 Transient thermal impedance ZthJA = f (tp) parameter : D = t p/T 10 3 BSS87 A tp = 65.0s 100 s K/W 10 0 /ID on ) 10 2 ID RD S( ZthJA 1 ms 10 ms = VD S 10 1 10 -1 D = 0.50 10 0 0.20 single pulse 0.10 0.05 0.02 0.01 10 -2 10 -1 DC 10 -3 0 10 10 1 10 2 V 10 3 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS Page 4 tp 2002-11-14 Rev. 1.0 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 C, VGS 0.52 BSS87 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 C, VGS 10 A 10V 7V 5V W 8 2.3V 2.9V 0.44 6V 0.36 4.1V RDS(on) 0.4 4.5V 3.5V 0.32 2.9V 2.3V 0.28 0.24 0.2 0.16 0.12 0.08 0.04 0 0 0.5 1 1.5 2 2.5 3 4 V VDS 7 6 5 4 3 2 1 0 0 3.5V 4.1V 4.5V 5V 6V 7V 10V ID 0.08 0.16 0.24 0.32 0.4 A ID 0.52 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: Tj = 25 C 1 8 Typ. forward transconductance g fs = f(ID) parameter: Tj = 25 C 0.6 A S 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0 0 0.2 g fs V 0.4 ID 0.3 0.1 0.8 1.6 2.4 3.2 4.4 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 A 1 VGS Page 5 ID 2002-11-14 Rev. 1.0 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 0.26 A, VGS = 10 V W 30 BSS87 BSS87 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: V GS = VDS; ID =108A 2 V 98% 24 RDS(on) 22 20 18 16 14 12 10 8 6 4 2 0 -60 -20 20 60 100 C VGS(th) 1.6 1.4 typ. 1.2 1 98% typ 2% 0.8 0.6 180 0.4 -60 -20 20 60 100 C 160 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: V GS=0, f=1 MHz, Tj = 25 C 10 3 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj 10 1 BSS87 pF A 10 2 Ciss 10 0 C Coss 10 1 IF 10 -1 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 6 12 18 24 V 36 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Page 6 VSD 2002-11-14 Rev. 1.0 13 Typ. gate charge VGS = f (QG ); parameter: VDS , ID = 0.26 A pulsed, Tj = 25 C 16 V BSS87 BSS87 14 Drain-source breakdown voltage V(BR)DSS = f (Tj) 291 BSS87 V 12 V(BR)DSS 0.5 VDS max nC 276 271 266 261 256 251 246 241 236 231 VGS 10 8 0.2 VDS max 6 0.8 V DS max 4 2 226 221 0 0 1 2 3 4 6 216 -60 -20 20 60 100 C 180 QG Tj Page 7 2002-11-14 Rev. 1.0 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSS87 Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-11-14 |
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