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  Datasheet File OCR Text:
 LAB
MECHANICAL DATA Dimensions in mm
10.2 1.3 4.5
SEME
BUL58A
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Designed for use in electronic ballast applications
6.3
3.6 Dia.
15.1
18.0
123
1.3 14.0
0.85
* * * *
0.5
SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING
FEATURES
2.54 2.54
TO220
Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter
* Multi-base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. * Ion implant and high accuracy masking for tight control of characteristics from batch to batch. * Triple Guard Rings for improved control of high voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector - Base Voltage(IE=0) Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25C Operating and Storage Temperature Range
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
350V 160V 10V 10A 15A 3A 50W -55 to +150C
Prelim. 2/97
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated)
Parameter
VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO
SEME
BUL58A
Test Conditions
Min.
160 350 10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS Collector - Emitter Sustaining Voltage IC = 10mA Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector - Base Cut-Off Current Collector - Emitter Cut-Off Current Emitter Cut-Off Current IC = 1mA IE = 1mA VCB = 350V TC = 125C IB = 0 VEB = 9V IC = 0 IC = 0.3A IC = 2A IC = 4A IC = 1A TC = 125C VCE = 5V VCE = 5V VCE = 1V TC = 125C IB = 0.1A IB = 0.3A IB = 0.4A IB = 0.1A IB = 0.4A VCE = 4V f = 1MHz VCE = 150V
V 10 100 100 10 100
A A A
30 25 8 0.1 0.3 1.0
90 60 --
hFE*
DC Current Gain
0.2 0.6 1.2 1.1 1.4 V V
VCE(sat)*
Collector - Emitter Saturation Voltage IC = 3A IC = 4A IC = 1A IC = 4A IC = 0.2A VCB = 10V
VBE(sat)*
Base - Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Transition Frequency Output Capacitance
ft Cob
20 30
MHz pF
* Pulse test tp = 300s , < 2%
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97


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