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 Reflective Photosensors (Photo Reflectors)
CNZ2253
Reflective Photosensor
Overview
CNZ2253 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si Darlington phototransistor is used as the light detecting element. The two elements are located parallel in the same direction and objects are detected when passing in front of the device.
3.00.2
Mark for indicating LED side 7.50.2 (3.2)
4.00.2
Unit : mm
10.2 min. 6.00.2 1.70.2
o2.20.2
Features
High sensitivity Small size and light weight
Applications
Detection of paper, film and cloth Detection of position and edge Optical mark reading Detection of coin and bill
(7.2) 2 3
o0.450.05 o0.30.05 *2-0.90.15
Start, end mark detection of magnetic tape
1
Absolute Maximum Ratings (Ta = 25C)
Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector to emitter voltage Output (Photo Emitter to collector voltage transistor) Collector current Collector power dissipation Temperature Operating ambient temperature Storage temperature Symbol Ratings VR IF PD*1 VCEO VECO IC PC*2 Topr 3 50 75 20 5 30 100 -25 to +85 Unit V mA mW V V mA mW C C
(Note) 1 23 4 1. ( ) Dimension is reference Pin connection 2. * is dimension at the root of leads
*1
Tstg -30 to +100
Input power derating ratio is 1.0 mW/C at Ta 25C. *2 Output power derating ratio is 1.34 mW/C at Ta 25C.
Electrical Characteristics (Ta = 25C)
Parameter Input Reverse current (DC) characteristics Capacitance between terminals Output characteristics Collector cutoff current Collector current Forward voltage (DC) Symbol VF IR Ct ICEO IF = 50mA VR = 3V VR = 0V, f = 1MHz VCE = 10V 3 150 1.5 50 0.5 30 Conditions min typ 1.2 max 1.5 10 Unit V A pF A mA s V
Transfer tr*3 , tf*4 VCC = 10V, IC = 1mA, RL = 100 characteristics Response time Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 1mA
*1 I C
IC*1*2 VCC = 5V, IF = 10mA, RL = 100
classifications Class IC (mA) Q 3 to 9 R 6 to 18 S 12 to 30
*1
Transfer characteristics measurement circuit (Ambient light is shut off completely)
IC VCC d = 3 mm
IF
*3
*4
90% 10% tf
tr
,,, ,, ,,,, ,, ,, ,,
RL
Time required for the collector current to increase from 10% to 90% of its final value. Time required for the collector current to decrease from 90% to 10% of its initial value.
, ,,
4
Standard white paper (Reflective ratio 90%)
0.5
10.60.3 9.60.3
1
CNZ2253
Reflective Photosensors (Photo Reflectors)
IF , IC -- Ta
60 60
IF -- VF
1.6 Ta = 25C
VF -- Ta
IF , IC (mA)
50
IF
50
IF (mA)
Forward current, collector current
40 IC
40
VF (V)
1.2
IF = 50mA
30
Forward current
30
Forward voltage
10mA 0.8
20
20
0.4
10
10
0 - 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0 - 40 - 20
0
20
40
60
80
100
Ambient temperature Ta (C )
Forward voltage VF (V)
Ambient temperature Ta (C )
IC -- IF
10 3 VCC = 5V Ta = 25C RL = 100 10 3
IC -- VCE
160 Ta = 25C VCC = 5V IF = 10mA RL = 100 120
IC -- Ta
IC (mA)
10 2
IC (mA)
10 2 IF = 20mA
10
10
Relative output current
10 2
Collector current
Collector current
IC (%)
10mA
80
1
1
40
10 -1
1
10
10 2
10 3
10 -1 10 -1
1
10
0 - 40 - 20
0
20
40
60
80
100
Forward current IF (mA)
Collector to emitter voltage VCE (V)
Ambient temperature Ta (C )
ICEO -- Ta
10 3 VCE = 10V 10 4
tr -- IC
VCC = 10V Ta = 25C 16
IC -- d
VCC = 5V Ta = 25C RL = 100 IF = 1.5mA 12
ICEO (A)
10 3
RL = 1k 500 100
tr (s)
IC (mA)
10 2
10
Dark current
1
Rise time
10 2
Collector current
8
10 10 -1
4
10 -2 - 40 - 20
0
20
40
60
80
100
1 10 -2
10 -1
1
10
0
0
2
Ambient temperature Ta (C )
Collector current IC (mA)
2
, ,
d 4 6 8
Distance d (mm)


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