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CS220-12B CS220-12D CS220-12M CS220-12N CS220-12P
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 * Fax: (631) 435-1824
SILICON CONTROLLED RECTIFIER 12 AMP, 200 THRU 1000 VOLTS JEDEC TO-220AB CASE
DESCRIPTION The CENTRAL SEMICONDUCTOR CS220-12B series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MAXIMUM RATINGS (TC = 25 C unless otherwise noted) CS220 -12B 200 CS220 -12D 400 CS220 -12M 600 12 120 72 40 1.0 4.0 16 5.0 100 -40 to +150 -40 to +125 60 2.5
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SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC = 90 C) Peak One Cycle Surge (t = 10ms) I2t Value for Fusing (t = 10ms) Peak Gate Power (tp = 10s) Average Gate Power Dissipation Peak Forward Gate Current (tp = 10s) Peak Forward Gate Voltage (tp =10s) Peak Reverse Gate Voltage (tp =10s) Critical Rate of Rise of On-State Current Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance
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CS220 -12N 800
CS220 -12P 1000
UNITS
VDRM, VRRM IT(RMS) ITSM I2t PGM PG(AV) IFGM VFGM VRGM di/dt Tstg TJ J-A J-C
V A A A2 s W W A V V A/s
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C C
C/W C/W
ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) SYMBOL IDRM, IRRM IDRM, IRRM IGT IH VGT VTM dv/dt TEST CONDITIONS Rated VDRM, VRRM o Rated VDRM, VRRM, TC = 125 C VD = 12V, RL = 33 IT = 100mA VD = 12V, RL = 33 ITM = 24A, tp = 10ms VD = .67 x VDRM, TC = 125 C
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MIN
TYP
MAX 0.01 3.00 15 30 1.50 1.60
UNITS mA mA mA mA V V V/s
200
R2 ( 30-November 2001)

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