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| RazerThin(R) LEDs CxxxRT290-S000 Cree's RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree's proprietary G*SiC(R) substrate to deliver superior price/performance for high-intensity blue and green LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward voltage. Cree's RazerThin series chips have the ability to withstand 1000V ESD. Applications for RazerThin LEDs include next-generation keypad backlighting where sub-miniaturization and thinner form factors are required. FEATURES * * Thin 95 m Chip Reduced Forward Voltage - * - - - * * 2.9V Typical at 5 mA 460nm - 3.8-11.1 mW 470nm - 3.4-10.4 mW 527nm - 1.7-6.0 mW APPLICATIONS * Mobile Phone Key Pads - - - * * * * * White LEDs Blue LEDs Green LEDs RazerThin LED Performance Cellular Phone LCD Backlighting Digital Camera Flash for Mobile Appliance Automotive Dashboard Lighting LED Video Displays Audio Product Display Lighting Single Wire Bond Structure Class 2 ESD Rating CxxxRT290-S000 Chip Diagram Top View G*SiC LED Chip 270 x 270 m Mesa (junction) 246 x 246 m Gold Bond Pad 110 m Diameter Bottom View Die Cross Section R3BU, Rev. D Datasheet: CP InGaN Anode (+) SiC Substrate h = 95 m Backside Metallization Cathode (-) Subject to change without notice. www.cree.com Maximum Ratings at TA = 25C Notes &3 DC Forward Current Peak Forward Current (1/10 duty cycle @ 1kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Electrostatic Discharge Threshold (HBM) Note 2 CxxxRT290-S000 30 mA 100 mA 125C 5V -40C to +100C -40C to +100C 1000 V Class 2 Note 3 Electrostatic Discharge Classification (MIL-STD-883E)Note 2 Typical Electrical/Optical Characteristics at TA = 25C, If = 5mA Part Number Forward Voltage (Vf, V) Min. Typ. 2.9 2.9 2.9 Max. 3.1 3.1 3.2 Reverse Current [I(Vr=5V), A] Max. 1 1 1 CxxxRT290-S000 Dimension 246 x 246 270 x 270 270 x 270 95 110 1.2 20 Tolerance 25 25 25 15 20 0.5 10 C460RT290-S0100 C470RT290-S0100 C527RT290-S0100 Mechanical Specifications Description P-N Junction Area (m) Top Area (m) Bottom Area (m) Chip Thickness (m) Au Bond Pad Diameter (m) Au Bond Pad Thickness (m) Back Contact Metal Width (m) 2.7 2.7 2.6 Notes: 1. 2. 3. 4. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller. The forward currents (DC and Peak) are not limited by the G*SiC die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325C (< 5 seconds). Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding the ability of Products to withstand ESD. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E. For reference only, typical Vf for C460, C470, and C527 is 3.2 V and at 20 mA. Copyright (c) 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G*SiC and RazerThin are registered trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 2 CPR3BU Rev. D Standard Bins for RT290 All LED chips are sorted onto die sheets according to the bins shown below. All radiant flux values shown and specified are at If = 20 mA (see Note 1) and all dominant wavelength values shown and specified are at If = 5 mA (see Note 2). C460RT290-S000 C460RT290-0105 C460RT290-0101 C460RT290-0106 C460RT290-0102 C460RT290-0107 C460RT290-0103 C460RT290-0108 C460RT290-0104 11.1 mW Radiant Flux 7.2 mW 3.8 mW 455 nm 457.5 nm 460 nm Dominant Wavelength C470RT290-S000 462.5 nm 465 nm 10.4 mW Radiant Flux 6.7 mW C470RT290-0105 C470RT290-0101 C470RT290-0106 C470RT290-0102 C470RT290-0107 C470RT290-0103 C470RT290-0108 C470RT290-0104 3.4 mW 465 nm 467.5 nm 470 nm Dominant Wavelength C527RT290-S000 472.5 nm 475 nm Radiant Flux 6.0 mW 3.5 mW C527RT290-0104 C527RT290-0101 C527RT290-0105 C527RT290-0102 C527RT290-0106 C527RT290-0103 1.7 mW 520 nm 525 nm 530 nm 535 nm Dominant Wavelength Notes: 1. 2. 3. For reference only, radiant flux values at If = 5 mA are typically 29% and 32% of the corresponding radiant flux at If = 20 mA for 455-475 nm range and 520-535 nm range, respectively. For reference only, wavelength values at If = 20 mA are typically 2 nm less and 7 nm less than the corresponding wavelength values at If = 5 mA for 455-475 nm range and 520-535 nm range, respectively. Sorted die dits may contain any or all of the bins shown above, respectively. Copyright (c) 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G*SiC and RazerThin are registered trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 3 CPR3BU Rev. D Characteristic Curves These are representative measurements for the RazerThin products. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Forward Current vs Forward Voltage 30 10.00 8.00 Wavelength Shift vs Forward Current 25 6.00 4.00 20 Shift (nm) 2.00 0.00 -2.00 -4.00 If (mA) 15 10 -6.00 527nm 5 -8.00 470nm -10.00 0 0.0 0.5 1.0 1.5 2.0 2.5 Volts 3.0 3.5 4.0 4.5 5.0 -12.00 0 5 10 15 If (mA) 20 25 30 Relative Intensity vs Forward Current 140 100% Relative Intensity vs Wavelength - All Products 120 80% Relative Intensity (%) 100 % Intensity 80 60% 60 40% 470 nm 527 nm 20% 40 20 0 0% 0 5 10 15 If (mA) 20 25 30 500 Wavelength (nm) Copyright (c) 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G*SiC and RazerThin are registered trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 4 CPR3BU Rev. D |
Price & Availability of CXXXRT290-S0100
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