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DG648BH45
DG648BH45
Gate Turn-off Thyristor
Replaces March 1998 version, DS4093-2.3 DS4093-3.0 January 2000
APPLICATIONS
s Variable speed A.C. motor drive inverters (VSD-AC) s Uninterruptable Power Supplies s High Voltage Converters s Choppers s Welding s Induction Heating s DC/DC Converters
KEY PARAMETERS 2000A ITCM VDRM 4500V 745A IT(AV) dVD/dt 1000V/s 300A/s diT/dt
FEATURES
s Double Side Cooling s High Reliability In Service s High Voltage Capability s Fault Protection Without Fuses s High Surge Current Capability s Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements
Outline type code: H. See Package Details for further information.
VOLTAGE RATINGS
Type Number Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage VRRM VDRM V V 4500 16 Conditions
DG648BH45
Tvj = 125oC, IDM = 50mA, IRRM = 50mA
CURRENT RATINGS
Symbol ITCM IT(AV) IT(RMS) Parameter Conditions Max. 2000 745 1170 Units A A A
Repetitive peak controllable on-state current VD = VDRM, Tj = 125oC, diGQ/dt = 40A/s, Cs = 2.0F Mean on-state current RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. THS = 80oC. Double side cooled. Half sine 50Hz.
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DG648BH45
SURGE RATINGS
Symbol ITSM I2t diT/dt Parameter Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Conditions 10ms half sine. Tj = 125oC 10ms half sine. Tj =125oC VD = 4500V, IT = 2000A, Tj = 125oC, IFG > 30A, Rise time > 1.0s To 66% VDRM; RGK 1.5, Tj = 125oC dVD/dt Rate of rise of off-state voltage To 66% VDRM; VRG = -2V, Tj = 125oC Peak stray inductance in snubber circuit IT = 2000A, VDM = 4500V, Tj = 125C, -diGQ/dt = 40A/s, Cs = 2.0F 1000 200 V/s nH Max. 16.0 1.28 x 106 300 175 Units kA A2s A/s V/s
LS
GATE RATINGS
Symbol VRGM IFGM PFG(AV) PRGM diGQ/dt tON(min) tOFF(min) Parameter Peak reverse gate voltage Peak forward gate current Average forward gate power Peak reverse gate power Rate of rise of reverse gate current Minimum permissable on time Minimum permissable off time Conditions This value maybe exceeded during turn-off Min. 20 30 50 100 Max. 16 100 15 19 60 Units V A W kW A/s s s
THERMAL RATINGS AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-hs) DC thermal resistance - junction to heatsink surface Anode side cooled Cathode side cooled Rth(c-hs) Tvj TOP/Tstg Contact thermal resistance Virtual junction temperature Operating junction/storage temperature range Clamping force Clamping force 20.0kN With mounting compound per contact Min. -40 18.0 Max. 0.018 0.03 0.045 0.006 125 125 22.0 Units
o
C/W C/W C/W C/W
o
o
o
o
C C
o
kN
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DG648BH45
CHARACTERISTICS
Tj = 125oC unless stated otherwise Symbol VTM IDM IRRM VGT IGT IRGM EON td tr EOFF tgs tgf tgq QGQ QGQT IGQM On-state voltage Peak off-state current Peak reverse current Gate trigger voltage Gate trigger current Reverse gate cathode current Turn-on energy Delay time Rise time Turn-off energy Storage time Fall time Gate controlled turn-off time Turn-off gate charge Total turn-off gate charge Peak reverse gate current IT = 2000A, VDM = VDRM Snubber Cap Cs = 2.0F, diGQ/dt = 40A/s Parameter Conditions At 2000A peak, IG(ON) = 7A d.c. VDRM = 4500V, VRG = 0V At VRRM VD = 24V, IT = 100A, Tj = 25oC VD = 24V, IT = 100A, Tj = 25oC VRGM = 16V, No gate/cathode resistor VD = 3000V IT = 2000A, dIT/dt = 300A/s IFG = 30A, rise time < 1.0s Min. Max. 3.2 100 50 1.0 3.0 50 3170 1.35 3.2 10000 20.0 2.0 22.0 6000 12000 690 Units V mA mA V A mA mJ s s mJ s s s C C A
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DG648BH45
CURVES
2.0 8.0
Gate trigger voltage VGT - (V)
1.5
6.0
Gate trigger current IGT - (A)
1.0
4.0
VGT 0.5 IGT 0 -50 -25 0 25 50 75 100 Junction temperature Tj - (C) 125 0 150 2.0
Fig.1 Maximum gate trigger voltage/current vs junction temperature
4000
Instantaneous on-state current ITM - (A)
Measured under pulse conditions. IG(ON) = 7A Half sine wave 10ms Tj = 125C Tj = 25C
3000
2000
1000
0
0
1.0 2.0 3.0 4.0 Instantaneous on-state voltage VTM - (V)
Fig.2 On-state characteristics
5.0
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DG648BH45
3000
Maximum permissible turn-off current ITCM - (A)
Conditions: Tj = 125C, VDM = VDRM, dIGQ/dt = 40A/s
2000
1000
0
0
1.0 2.0 3.0 Snubber capacitance CS - (F)
Fig.3 Maximum dependence of ITCM on CS
4.0
0.020 dc
Thermal impedance - C/W
0.015
0.010
0.005
0 0.001
0.01
0.1 Time - (s)
1.0
10
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
Peak half sine wave on-state current - (kA)
40
30
20
10
0 0.0001
0.001
0.01 Pulse duration - (s)
0.1
1.0
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Fig.5 Surge (non-repetitive) on-state current vs time
DG648BH45
4000
Mean on-state power dissipation - (W)
Conditions: IG(ON) = 7A dc 180
3000
2000 60 30 1000
120
0
0
500 1000 1500 Mean on-state current IT(AV) - (A)
70 80 90 100 120 Maximum permissible case temperature - (C)
130
Fig.6 Steady state rectangluar wave conduction loss - double side cooled
Mean on-state power dissipation - (W)
3000 Conditions: IG(ON) = 7A 2000 60 30 1000 180 120 90
0
0
90 100 120 130 200 400 600 800 1000 1200 1400 80 Mean on-state current IT(AV) - (A) Maximum permissible case temperature - (C)
Fig.7 Steady state sinusoidal wave conduction loss - double side cooled
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DG648BH45
4000
Turn-on energy loss EON - (mJ)
Conditions: Tj = 25C, IFGM = 30A, CS = 2.0F, dI/dt = 300A/s, 3000 dIFG/dt = 30A/s
VD = 3000V
2000
VD = 2000V
1000 VD = 1000V
0
0
500
1000 1500 2000 On-state current IT - (A)
Fig.8 Turn-on energy vs on-state current
2500
3000
5000
4000
Turn-on energy loss EON - (mJ)
Conditions: Tj = 25C, IT = 2000A, CS = 2.0F, RS = 10 Ohms dI/dt = 300A/s, dIFG/dt = 30A/s
3000 VD = 3000V
2000 VD = 2000V
1000 VD = 1000V
0
0
20 40 60 Peak forward gate current IFGM - (A)
Fig.9 Turn-on energy vs peak forward gate current
80
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DG648BH45
4000
Turn-on energy loss EON - (mJ)
Conditions: Tj = 125C, IFGM = 30A, CS = 2.0F, RS = 10, 3000 dIT/dt = 300A/s, dIFG/dt = 30A/s,
VD = 3000V
VD = 2000V 2000
1000
VD = 1000V
0
0
500
1000 1500 2000 On-state current IT - (A)
Fig.10 Turn-on energy vs on-state current
2500
3000
5000
4000
Turn-on energy loss EON - (mJ)
Conditions: Tj = 125C, IT = 2000A, CS = 2.0F, RS = 10 Ohms dI/dt = 300A/s, dIFG/dt = 30A/s
Turn-on energy loss EON - (mJ)
4000 Conditions: IT = 2000A, Tj = 125C, CS = 2.0F 3000 RS = 10 Ohms IFGM = 30A, dIFG/dt = 30A/s 2000
VD = 3000V
3000
VD = 3000V
VD = 2000V
2000
VD = 2000V
1000
VD = 1000V
1000
VD = 1000V
0 100 200 300 Rate of rise of on-state current dIT/dt - (A/s) 0
0
0
20 40 60 Peak forward gate current IFGM - (A)
80
Fig.11 Turn-on energy vs peak forward gate current
Fig.12 Turn-on energy vs rate of rise of on-state current
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DG648BH45
4.0
Turn-on delay and rise time - (s)
tr 3.0
2.0
td 1.0 Conditions: Tj = 125C, IFGM = 30A, CS = 2.0F, VD = 3000V, RS = 10, dIT/dt = 300A/s, dIFG/dt = 30A/s, 0 500 1000 1500 2000 On-state current IT - (A) 2500 3000
0
Fig.13 Delay time & rise time vs turn-on current
8.0
Turn-on delay time and rise time - (s)
6.0
Conditions: Tj = 125C, IT = 2000A, CS = 2.0F, RS = 10 Ohms, dI/dt = 300A/s, dIFG/dt = 30A/s, VD = 3000V
4.0
2.0
tr td
0
0
20 40 60 Peak forward gate current IFGM - (A)
80
Fig.14 Delay time & rise time vs peak forward gate current
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DG648BH45
5000 Conditions: Tj = 25C, CS = 2.0F, dIGQ/dt = 40A/s VDRM
4000
Turn-off energy loss EOFF - (mJ)
0.75x VDRM
3000 0.5x VDRM
2000
1000
0
0
500
1000 1500 2000 On-state current IT - (A)
Fig.15 Turn-off energy vs on-state current
2500
3000
6000
Turn-off energy per pulse EOFF - (mJ)
Conditions: Tj = 25C, CS = 2.0F, IT = 2000A
VDRM
5000
0.75x VDRM 4000
3000
0.5x VDRM
2000 20
30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/s)
Fig.16 Turn-off energy vs rate of rise of reverse gate current
70
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DG648BH45
10000 Conditions: Tj = 125C, CS = 2.0F, dIGQ/dt = 40A/s VDRM
8000
Turn-off energy loss EOFF - (mJ)
0.75x VDRM
6000 0.5x VDRM
4000
2000
0
0
1000 1500 2000 2500 On-state current IT - (A) FIG 17Fig.17 Turn-off energy vs on-state current TURN OFF ENERGY ON STATE CURRENT
500
3000
12000
Turn-off energy per pulse EOFF - (mJ)
Conditions: Tj = 125C, CS = 2.0F, IT = 2000A
VDRM
10000
0.75x VDRM 8000
6000
0.5x VDRM
4000 20
30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/s)
70
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
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DG648BH45
8000
Turn-off energy per pulse EOFF - (mJ)
Conditions: Tj = 125C, VDM = 0.75x VDRM, dIGQ/dt = 40A/s
CS = 2.0F CS = 4.0F
6000
4000
2000
0
0
500
1000 1500 2000 On-state current IT - (A)
Fig.19 Turn-off energy vs on-state current
2500
3000
20.0
Conditions: CS = 2.0F, dIGQ/dt = 40A/s
Tj = 125C Tj = 25C
Gate storage time tgs - (s)
15.0
10.0
5.0
0
0
500
1000 1500 2000 On-state current IT - (A)
Fig.20 Gate storage time vs on-state current
2500
3000
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DG648BH45
30
Conditions: CS = 2.0F, IT = 2000A
Gate storage time tgs - (s)
25
20 Tj = 125C
15
Tj = 25C
10 20
30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/s)
Fig.21 Gate storage time vs rate of rise of reverse gate current
70
2.0
Conditions: CS = 2.0F, dIGQ/dt = 40A/s
Tj = 125C
1.5
Gate fall time tgf - (s)
Tj = 25C
1.0
0.5
0
0
500
1000 1500 2000 On-state current IT - (A)
Fig.22 Gate fall time vs on-state current
2500
3000
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DG648BH45
2.5
Conditions: CS = 2.0F, IT = 2000A Tj = 125C
2.0
Gate fall time tgf - (s)
1.5
Tj = 25C
1.0
0.5 20
30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/s)
Fig.23 Gate fall time vs rate of rise of reverse gate current
70
800
Peak reverse gate current IGQM - (A)
Conditions: CS = 2.0F, dIGQ/dt = 40A/s
Tj = 125C Tj = 25C
600
400
200
0
0
500
1000 1500 2000 Turn-off current IT - (A)
2500
3000
Fig.24 Peak reverse gate current vs turn-off current
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DG648BH45
750 Conditions: CS = 2.0F, IT = 2000A 700
Peak reverse gate current IGQM - (A)
Tj = 125C
650 Tj = 25C 600
550
500 20
30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/s)
70
Fig.25 Peak reverse gate current vs rate of rise of reversegate current
8000
Conditions: CS = 2.0F, dIGQ/dt = 40A/s Tj = 125C
Total turn-off charge QGQ - (C)
6000
Tj = 25C 4000
2000
0
0
500
1000 1500 2000 On-state current IT - (A)
Fig.26 Turn-off gate charge vs on-state current
2500
3000
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DG648BH45
7000
Conditions: CS = 2.0F, IT = 2000A
Turn-off gate charge QGQ - (C)
6000 TJ = 125C
5000
Tj = 25C 4000
3000 20
30 40 50 60 Rate of rise of reverse gate current dIGQ/dt - (A/s)
70
Fig.27 Turn-off gate charge vs rate of rise of reverse gate current
Rate of rise of off-state voltage dV/dt - (V/s)
1000 Tj = 125C
500 VD = 2250V
VD = 3000V 0 0.1 1.0 10 100 Gate cathode resistance RGK - (Ohms) 1000
Fig.28 Rate of rise of off-state voltage vs gate cathode resistance
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DG648BH45
Anode voltage and current
0.9VD
0.9IT
dVD/dt VD IT VD VDM
0.1VD td tgt tr
VDP tgs tgf
ITAIL
dIFG/dt
Gate voltage and current
tgq IFG VFG IG(ON)
0.1IFG
0.1IGQ tw1 QGQ 0.5IGQM IGQM Recommended gate conditions: ITCM = 2000A IFG = 30A IG(ON) = 7A d.c. tw1(min) = 20s IGQM = 690A diGQ/dt = 40A/s QGQ = 6000C VRG(min) = 2V VRG(max) = 16V V(RG)BR
VRG
These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications.
Fig.29 General switching waveforms
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DG648BH45
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
2 holes O3.60 0.05 x 2.0 0.1 deep (One in each electrode)
Cathode Aux. Tube
Gate Tube
15
52 O100 O62.85
Anode
9.6 O62.85 55
Cathode
Nominal weight: 820g Clamping force: 20kN 10% Lead length: 505mm Package outine type code: H
ASSOCIATED PUBLICATIONS
Title Calculating the junction temperature or power semiconductors GTO gate drive units Recommendations for clamping power semiconductors Use of V , r on-state characteristic
TO T
Application Note Number AN4506 AN4571 AN4839 AN5001 AN5177
Impoved gate drive for GTO series connections
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26 0.5
DG648BH45
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it's own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2000 Publication No. DS4093-3 Issue No. 3.0 January 2000 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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