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| Advanced Technical Information DGS 3-01AS IFAV = 12 A VRRM = 100 V CJunction = 19 pF Gallium Arsenide Schottky Rectifier VRSM V 100 VRRM V 100 Type Marking on product A C TO-252 AA A A C (TAB) DGS 3-01AS 3A010AS A = Anode, C = Cathode , TAB = Cathode Symbol IFAV IFAV IFSM TVJ Tstg Ptot Conditions TC = 25C; DC TC = 90C; DC TVJ = 45C; tp = 10 ms (50 Hz); sine Maximum Ratings 12 8.5 10 -55...+175 -55...+150 A A A Features C C TC = 25C 18 W Low forward voltage Very high switching speed Low junction capacity of GaAs - low reverse current peak at turn off Soft turn off Temperature independent switching behaviour High temperature operation capability Epoxy meets UL 94V-0 Applications Symbol IR VF CJ RthJC Weight Conditions VR = VRRM; VR = VRRM; IF = 2 A; IF = 2 A; VR = 50 V; TVJ = 25C TVJ = 125C TVJ = 125C TVJ = 25C TVJ = 125C Characteristic Values typ. max. 0.7 0.7 0.54 0.62 19 8.5 0.3 0.8 mA mA V V pF K/W g MHz switched mode power supplies (SMPS) Small size SMPs High frequency converters Resonant converters Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0% Data according to DIN/IEC 747 and per diode unless otherwise specified IXYS reserve the right to change limits, conditions and dimensions. (c) 2002 IXYS All rights reserved 1-2 238 Advanced Technical Information DGS 3-01AS 30 10 A IF 1 tbd TVJ = 125C 25C 200 pF TVJ = 125C TO-252 AA CJ 100 0,1 1 Anode 2 NC 3 Anode 4 Cathode 0,01 0,0 0,5 1,0 1,5 Fig. 1typ. forward characteristics 2,0 2,5 V 3,0 VF 10 0,1 1 10 Fig. 2 typ. junction capacity versus blocking voltage 100 V 1000 VR Dim. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 DGS 3-01AS Millimeter Min. Max. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.89 1.27 2.54 2.92 Inches Min. Max. 0.086 0.094 0.035 0.045 0 0.005 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.023 0.018 0.023 0.235 0.245 0.170 0.205 0.250 0.265 0.170 0.205 0.090 BSC 0.180 BSC 0.370 0.410 0.020 0.040 0.025 0.040 0.035 0.050 0.100 0.115 10 K/W 1 ZthJC Single Pulse 0,1 0,01 0,00001 0,0001 0,001 0,01 0,1 1 t s 10 Fig. 3 typ. thermal impedance junction to case Note: explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide Schottky diodes: Rectifier Diode conduction by majority + minority carriers forward characteristics VF (IF) turn off characteristics extraction of excess carriers causes temperature dependant reverse recovery (trr, IRM, Qrr) turn on characteristics delayed saturation leads to VFR GaAs Schottky Diode by majority carriers only VF (IF), see Fig. 1 reverse current charges junction capacity CJ, see Fig. 2; not temperature dependant no turn on overvoltage peak IXYS reserve the right to change limits, conditions and dimensions. (c) 2002 IXYS All rights reserved 2-2 238 |
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