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| Semiconductor DP500F PNP Silicon Transistor Description * Extremely low collector-to-emitter saturation voltage ( VCE(SAT)=-0.2V Typ. @IC /IB =-3A/-150mA) * Suitable for low voltage large current drivers * Excellent hFE Linearity * Complementary pair with DN500F Ordering Information Type NO. DP500F Marking P5 : hFE rank, monthly code Package Code SOT-89 Outline Dimensions 4.0 0.500.1 -0.3 +0.5 unit : mm 2.5 +0.2 -0.3 1.000.3 7 1.820.05 -0.1 +0.2 3 2 1 0.420.05 0.520.05 0.15 Typ. -0.1 1.5 +0.2 4.5 0.42 +0.04 0~0.1 -0.02 PIN Connections 1. Base 2. Collector 3. Emitter KST-8014-000 1 DP500F Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25 C) Symbol VCBO VCEO VEBO IC PC PC * Ratings -15 -12 -5 -5 0.5 2 150 -55~150 Unit V V V A W C C Tj T stg * : When mounted on 40x40x0.8mm ceramic substate Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter on voltage Base-Emitter on voltage Transition frequency Collector output capacitance (Ta=25 C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE1 * Test Condition IC=-50A, I E =0 IC=-1mA, IB=0 IE =-50A, IC =0 VCB=-12V, I E =0 VEB =-5V, IC =0 VCE=-1V, IC =-100mA VCE=-1V, IC =-3A IC=-3A, IB =-150mA IC=-3A, IB =-150mA VCB=-5V, I C=-500mA VCB=-10V, I E =0, f=1MHz Min. -15 -12 -5 120 40 - Typ. 150 - Max. -1 -1 700 -0.3 -1.2 50 Unit V V V A A V V MHz pF h FE2 VCE(sat1) VBE(sat) fT C ob * : h FE rank / O : 120 ~ 240, Y : 200 ~ 400, G : 350 ~ 700 KST-8014-000 2 DP500F Electrical Characteristic Curves Fig. 1 Pc - Ta Fig. 2 Ic - VBE Fig. 3 hFE - IC Fig. 4 VCE(sat) - IC KST-8014-000 3 |
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