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| ADVANCE TECHNICAL INFORMATION DSP 8 Phase-leg Rectifier Diode ISOPLUS220TM Electrically Isolated Back Surface VRRM = 800/1200 V IF(AV)M = 2 x 11 A ISOPLUS220TM VRSM V 900 1300 VRRM V 800 1200 DSP 8-08AC DSP 8-12AC 1 2 3 Type 1 2 3 Isolated back surface * * Patent pending Symbol IFRMS IF(AV)M IFSM Test Conditions TVJ = TVJM Tcase = 100C; 180 sine TVJ = 45C; t = 10 ms t = 8.3 ms (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine Maximum Ratings 30 2 x 11 100 105 85 90 50 45 35 30 -40...+150 150 -55...+150 A A A A A A A 2s A 2s A 2s A 2s C C C Features l TVJ = 150C; t = 10 ms t = 8.3 ms I 2t TVJ = 45C t = 10 ms t = 8.3 ms TVJ = 150C; t = 10 ms t = 8.3 ms l l l l TVJ TVJM Tstg Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation For single and three phase bridge configuration Low cathode to tab capacitance (<15pF) Planar passivated chips Epoxy meets UL 94V-0 ISOPLUS220 Outline TL VISOL FC Weight Symbol IR Q VF R 1.6 mm (0.063 in) from case for 10 s 50/60 Hz RMS; IISOL 1 mA Mounting Force 260 2500 11...65 / 2.5..15 2 C V~ N/lb g Test Conditions VR = VRRM; TVJ = 25C TVJ = 150C Characteristic Values 10 0.7 1.22 1.26 0.8 41 typ. 1.8 0.6 100 A mA V V V m K/W K/W m/s2 IF = 10 A; TVJ = 25C TVJ = 125C For power-loss calculations only TVJ = TVJM DC current DC current (with heatsink compound) Maximum allowable acceleration VT0 rT RthJC RthCK a Notes: Data given for TVJ = 25OC and per diode unless otherwise specified Q Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 % RPulse test: pulse Width = 300 s, Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions. (c) 2001 IXYS All rights reserved 98820 (04/01) |
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