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| SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=65A. Zener Voltage : 27V(Typ.) E65A27VBS, E65A27VBR STACK SILICON DIFFUSED DIODE A POLARITY E65A27VBS (+ Type) E65A27VBR (- Type) K H MAXIMUM RATING (Ta=25 CHARACTERISTIC Average Forward Current Peak 1 Cycle Surge Current Non-Repetitive Peak Reverse Surge Current (10mS) Transient Peak Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL IF(AV) IFSM IRSM VRSM VRM Tj Tstg RATING 65 450 (60Hz) 65 20 20 -40 215 -40 215 UNIT A A A V V G B JD F EI DIM A B C D E F G H I J K MILLIMETERS 11.5 MAX 12.75+0.09-0.00 _ 1.3 + 0.04 _ 4.2 + 0.2 _ 8.0+ 0.2 TYP 0.5 _ 10.0 + 0.2 _ 0.4 + 0.1x45 8.5 MAX 0.2+0.1 _ 28.35+ 0.5 B-PF ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage Zener Voltage Reverse Current Transient Thermal Resistance Breakdown Voltage Temperature Coefficient Reverse Leakage Current Under High Temperature Temperature Resistance ) TEST CONDITION IFM=100A IZ=10mA VR=20V IFM=100A, IM=100mA, Pw=100mS Irsm=65A, Pw=10mS IZ=10mA Ta=150 , VR=20V DC total junction to case MIN. 24 TYP. 27 15.7 MAX. 1.05 29 0.2 50 34 100 0.6 UNIT V V A mV V mV/ A /W VF SYMBOL VZ IR VF Vbr T HIR Rth 2002. 10. 9 Revision No : 0 1/1 |
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