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| Photomicrosensor (Reflective) EE-SY201 Dimensions Note: All units are in millimeters unless otherwise indicated. Features * The LED requires a forward current of only 5 mA due to the PhotoDarlington transistor built into the detector. * With a red LED light source. Absolute Maximum Ratings (Ta = 25C) Four, 0.125 Item Emitter Forward current Pulse forward current Reverse voltage Detector Collector-Emitter voltage Emitter-Collector voltage Collector current Collector dissipation Symbol IF IFP VR VCEO VECO IC PC Topr Tstg Tsol Rated value 15 mA (see note 1) --4V 24 V --20 mA 50 mW (see note 1) -20C to 60C -20C to 80C 260C (see note 2) Two. 0.5 Two, 1 dia. Optical axis Two. 0.7 Internal Circuit A C Ambient temperature Operating Storage Unless otherwise specified, the tolerances are as shown below. Dimensions 3 mm max. 3 < mm 6 6 < mm 10 10 < mm 18 18 < mm 30 Tolerance Soldering temperature K E 0.3 0.375 0.45 0.55 0.65 Terminal No. A K C E Name Anode Cathode Collector Emitter Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Forward voltage Reverse current Peak emission wavelength Detector Light current VF IR Symbol Value 2.0 V typ., 2.6 V max. 0.01 mA typ., 5 mA max. 700 nm typ. 0.3 mA min., 8.0 mA max. IF = 15 mA VR = 4 V IF = 10 mA IF = 5 mA, VCE = 10 V White paper with a reflection ratio of 90%, d = 4 mm (see note) VCE = 10 V, 0 lx ----VCE = 10 V VCC = 5 V, RL = 100 W, IL = 1 mA VCC = 5 V, RL = 100 W, IL = 1 mA Condition lP IL Dark current Leakage current ID ILEAK 2 nA typ., 250 nA max. ----750 nm typ. 180 ms typ. 60 ms typ. Collector-Emitter saturated volt- VCE (sat) age Peak spectral sensitivity wavelength Rising time Falling time lP tr tf Note: The letter "d" indicates the distance between the top surface of the sensor and the sensing object. EE-SY201 Photomicrosensor (Reflective) 241 Engineering Data Forward Current vs. Collector Dissipation Temperature Rating Collector dissipation PC (mW) Forward current IF (mA) Light Current vs. Forward Current Characteristics (Typical) Ta = 25C VCE = 10 V d = 4 mm Sensing object: White paper with a reflection factor of 90% Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Ta = 25C d = 4 mm Sensing object: White paper with a reflection factor of 90% IF = 15 mA IF = 10 mA IF = 7 mA IF = 5 mA IF = 3 mA IF = 1 mA Ambient temperature Ta (C) Light current IL (mA) Forward current IF (mA) Light current IL (mA) Response time tr, tf (s) Collector-Emitter voltage VCE (V) Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) IF = 5 mA VCE = 5 V d = 4 mm Sensing object: White paper with a reflection factor of 90% Dark Current vs. Ambient Temperature Characteristics (Typical) Dark Current ID (nA) VCE = 10 V 0lx Response Time vs. Load Resistance Characteristics (Typical) VCC = 5 V Ta = 25C Ambient temperature Ta (C) Ambient temperature Ta (C) Load resistance RL (k) Sensing Distance Characteristics (Typical) Ta = 25C IF = 5 mA VCE = 10 V Sensing object: White paper with a reflection factor of 90% Sensing Position Characteristics (Typical) Relative light current IL (%) Sensing Angle Characteristics (Typical) Relative light current IL (%) Ta = 25C VCE = 10 V IF = 5 mA d = 4 mm Sensing object: White paper with a reflection factor of 90% Light current IL (A) IF = 5 mA VCE = 10 V Ta = 25C (a) : d1 = 3 mm (b) : d1 = 4 mm (c) : d1 = 6 mm Sensing object: White paper with a reflection factor of 90% Distance d (mm) Distance d2 (mm) Angle deviation () Response Time Measurement Circuit Input Output 90 % 10 % Input Output 242 EE-SY201 Photomicrosensor (Reflective) |
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