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| polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1208 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 40 Watts Gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 170 Watts Junction to Case Thermal Resistance 1.05 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 30V o -65 o C to 150o C 8A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 10 60 TYP 40WATTS OUTPUT ) MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 1.6 A, Vds = 12.5 V, F = 400 MHz Idq = 1.6 A, Vds = 12.5 V, F = 400 MHz Idq = 1.6 A, Vds = 12.5 V, F = 400 MHz VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 1 1.6 0.45 15 80 12 60 MIN 40 2 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.1 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds Vds = 12.5 V, Vds = 0 V, Ids = 0.2 A, Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 16 A Vgs = 20V, Vds = 10V Vds = 12.5 V, Vgs = 0V, F = 1 MHz Vds = 12.5 V, Vgs = 0V, F = 1 MHz Vds = 12.5 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com F1208 POUT VS PIN GRAPH F1208 POUT VS PIN F=400MHZ; IDQ=1.6A; VDS=12.5V 45 40 GAIN 35 30 25 13 20 15 10 Efficiency = 50% 5 0 0 1 2 3 4 5 6 7 1 0 POUT GAIN CAPACITANCE VS VOLTAGE F1C 2DIE CAPACITANCE 21 19 17 15 100 1000 Coss Ciss POUT 11 9 7 5 10 Crss PIN IN WATTS 5 10 15 VDS IN VOLTS 20 25 30 IV CURVE F1C 2 DIE IV CURVE 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 Vds in Volts ID AND GM VS VGS F1C 2 DIE GM & ID vs VGS 100 Id 10 Gm 1 12 14 16 18 20 0.1 0 2 4 6 Vgs in Volts 8 10 12 14 Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V Vg = 12V S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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