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 polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
TM
F1401
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 35 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 50 Watts Junction to Case Thermal Resistance 3.5 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 150 V Drain to Source Voltage 150 V Gate to Source Voltage 30V
o
-65 o C to 150o C
2A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 10 75 TYP
35WATTS OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.1 A, Vds = 50.0 V, F = 400 MHz Idq = 0.1 A, Vds = 50.0 V, F = 400 MHz Idq = 0.1 A, Vds = 50.0 V, F = 400 MHz
VSWR
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 1 0.8 1 4.8 45 2.2 20 MIN 125 2 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.05 A, Vds = 50.0 V, Vds = 0 V, Ids = 0.1 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds
Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 2 A Vgs = 20V, Vds = 10V Vds = 50.0 V, Vgs = 0V, F = 1 MHz Vds = 50.0 V, Vgs = 0V, F = 1 MHz Vds = 50.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
F1401
POUT VS PIN GRAPH
F-1401 PIN VS POUT F=400 MHZ; IDQ=0.2A; VDS=50.0V
40 35 30 25 20 15 10 Efficiency = 75% 5 0 0 0.5 1 1.5 2
PIN IN WATTS
POUT GAIN
CAPACITANCE VS VOLTAGE
F1E 1 DIE CAPACITANCE
16 15 14 13 12 11 10 9 8 2.5 3 3.5 4
100
Ciss
Coss
10
Crss
1 0 5 10 15 20 25 30 35 40 45 50
VDS IN VOLTS
IV CURVE
F E 1 D IV 1 IE
5 4.5 4 3.5 ID IN AMPS 3
ID AND GM VS VGS
F1E 1 DIE ID & GM Vs VG
10.00
Id in amps; Gm in mhos
Id
1.00
2.5 2
gM
0.10
1.5 1 0.5 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 V SINV L S D OT Vg=6v vg=8v 14 0 16 18 vg=12v 20
0.01
0
2
4
6
8
10
12
14
16
18
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com


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